Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon

The detection of charge trap ionization induced by resonant excitation enables spectroscopy on single Er 3+ ions in silicon nanotransistors. In this work, a time-resolved detection method is developed to investigate the resonant excitation and relaxation of a single Er 3+ ion in silicon. The time-resolved detection is based on a long-lived current signal with a tunable reset and allows the measurement under stronger and shorter resonant excitation in comparison to time-averaged detection. Specifically, the short-pulse study gives an upper bound of 23.7 μs on the decay time of the 4 I 13/2 state of the Er 3+ ion. The fast decay and the tunable reset allow faster repetition of the single-ion detection, which is attractive for implementing this method in large-scale quantum systems of single optical centers. The findings on the detection mechanism and dynamics also provide an important basis for applying this technique to detect other single optical centers in solids.The detection of charge trap ionization induced by resonant excitation enables spectroscopy on single Er 3+ ions in silicon nanotransistors. In this work, a time-resolved detection method is developed to investigate the resonant excitation and relaxation of a single Er 3+ ion in silicon. The time-resolved detection is based on a long-lived current signal with a tunable reset and allows the measurement under stronger and shorter resonant excitation in comparison to time-averaged detection. Specifically, the short-pulse study gives an upper bound of 23.7 μs on the decay time of the 4 I 13/2 state of the Er 3+ ion. The fast decay and the tunable reset allow faster repetition of the single-ion detection, which is attractive for implementing this method in large-scale quantum systems of single optical centers. The findings on the detection mechanism and dynamics also provide an important basis for applying this technique to detect other single optical centers in solids.

Nano LettersJan 3, 20225 citations

Optical Spectra and Analysis of Triply-Ionized Erbium in Silicon.

D. E. Wortman, John L. Bradshaw, Clyde A. Morrison

APSMar 1, 19970 citations

Weight-four parity checks with silicon spin qubits

Brennan Undseth, Nicola Meggiato, Yi-Hsien Wu +7 more

Supporting data and scripts to generate plots used in the manuscript.

Jan 30, 20261 citation

Photoionization Detection of Single Atoms

Vladilen S Letokhov

Elsevier eBooksJan 1, 19872 citations

Photoionisation detection of a single Er3+ ion with sub-100-ns time resolution

Yangbo Zhang, Wenda Fan, Jiliang Yang +11 more

Abstract Efficient detection of single optical centres in solids is essential for quantum information processing, sensing and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionisation induced by a single Er3+ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionisation detection. With this technique, the optically excited state lifetime of a single Er3+ ion in a Si nano-transistor is measured for the first time to be $0.49 \pm 0.04\ \mu$ s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centres in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.Abstract Efficient detection of single optical centres in solids is essential for quantum information processing, sensing and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionisation induced by a single Er3+ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionisation detection. With this technique, the optically excited state lifetime of a single Er3+ ion in a Si nano-transistor is measured for the first time to be $0.49 \pm 0.04\ \mu$s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centres in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.

arXiv:2212.00440National Science ReviewMay 9, 20232 citations

0.49 \pm 0.04\ \mu

s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centres in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.