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Applied Physics Letters

Impact of on-chip gate voltage on the electric properties of NbTiN superconducting nanowire transistor

Qingchang Huan, Ruoyan Ma, Xingyu Zhang, Zhongpei Feng, Yangmu Li, Jia-Min Xiong, Jia Huang, Hao Li, Wei Peng, Xiaofu Zhang, Lixing You

Published Mar 25, 2024• 2 citations
Publisher

Abstract

In this work, the gate modulation characteristics of superconducting nanowire transistors (SNTs) were investigated under different on-chip gate voltage configurations. By fabricating NbTiN-SNTs with symmetric side gate, we studied the critical current suppression of SNTs under single, opposite, and double voltage gate. We figure out that the gate voltage and leakage current can be adjusted by the gate configuration. Moreover, it revealed an approximately twofold increase in modulation voltage for the opposite gate configuration as compared to the single gate configuration, implying a possible electric field tuned superconductivity. When simultaneously apply voltage on both gates, the onset and offset voltages kept unchanged, but the leakage current is then two times higher than that of single gate. In addition, under all these three types of gate configuration, the suppression of superconductivity coincided with the onset of leakage current, suggesting a potential charge injection mechanism. Our findings demonstrate that both the electric field and charge injection play important roles on the suppression of superconductivity in SNTs, which also contributes to the further optimization and applications of SNT.

DOI
10.1063/5.0199226

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In this work, the gate modulation characteristics of superconducting nanowire transistors (SNTs) were investigated under different on-chip gate voltage configurations. By fabricating NbTiN-SNTs with symmetric side gate, we studied the critical current suppression of SNTs under single, opposite, and double voltage gate. We figure out that the gate voltage and leakage current can be adjusted by the gate configuration. Moreover, it revealed an approximately twofold increase in modulation voltage for the opposite gate configuration as compared to the single gate configuration, implying a possible electric field tuned superconductivity. When simultaneously apply voltage on both gates, the onset and offset voltages kept unchanged, but the leakage current is then two times higher than that of single gate. In addition, under all these three types of gate configuration, the suppression of superconductivity coincided with the onset of leakage current, suggesting a potential charge injection mechanism. Our findings demonstrate that both the electric field and charge injection play important roles on the suppression of superconductivity in SNTs, which also contributes to the further optimization and applications of SNT.
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We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R approximately R(Q)=h/4e(2) approximately 6.45 kOmega, which are explained in terms of Cooper pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.
Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage ( V g ). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing V g . The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using V g in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.
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Superconducting quantum devices offer numerous applications, from electrical metrology and magnetic sensing to energy-efficient high-end computing and advanced quantum information processing. The key elements of quantum circuits are (single and double) Josephson junctions controllable either by electric current or magnetic field. The voltage control, commonly used in semiconductor-based devices via the electrostatic field effect, would be far more versatile and practical. Hence, the field effect recently reported in superconducting devices may revolutionise the whole field of superconductor electronics provided it is confirmed. Here we show that the suppression of the critical current attributed to the field effect, can be explained by quasiparticle excitations in the constriction of superconducting devices. Our results demonstrate that a miniscule leakage current between the gate and the constriction of devices perfectly follows the Fowler-Nordheim model of electron field emission from a metal electrode and injects quasiparticles with energies sufficient to weaken or even suppress superconductivity.
Several experiments have recently reported on gate-tunable superconducting properties in metallic devices, holding promise for the realization of cryogenic switches, tunable resonators, and superconducting logic. In particular, the suppression of the critical current as a function of the gate voltage has been widely investigated. However, time domain studies are discussed only in a few cases. In this paper, we present a microwave characterization of a gate-controlled Al-capped InAs nanowire embedded in a λ/4 coplanar waveguide resonator. We observe a shift in the resonator frequency and an increase in its internal losses as a function of the gate voltage, which we relate to a change in the imaginary and real components of the nanowire impedance, respectively. We demonstrate that these changes are described by the Mattis–Bardeen model with an effective temperature. We further study the resonator response to fast-varying gate signals and measure characteristic response times of the order of 40 ns, both in time domain and parametric modulation experiments. Our study elucidates the impact of the gate on the complex impedance of the nanowire in the superconducting state, as well as its dynamic performance, providing a foundation for the design of gate-controlled superconducting devices.