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arXiv:2502.17970 · Applied Physics Letters

Microwave dynamics of gated Al/InAs superconducting nanowires

Vittorio Buccheri, François Joint, Kazi Rafsanjani Amin, Tosson Elalaily, Olivér Kürtössy, Zoltán Scherübl, Gergő Fülöp, Thomas Kanne, Jesper Nygård, Péter Makk, Szabolcs Csonka, Simone Gasparinetti

Published Jun 9, 2025• 3 citations
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Abstract

Several experiments have recently reported on gate-tunable superconducting properties in metallic devices, holding promise for the realization of cryogenic switches, tunable resonators, and superconducting logic. In particular, the suppression of the critical current as a function of the gate voltage has been widely investigated. However, time domain studies are discussed only in a few cases. In this paper, we present a microwave characterization of a gate-controlled Al-capped InAs nanowire embedded in a λ/4 coplanar waveguide resonator. We observe a shift in the resonator frequency and an increase in its internal losses as a function of the gate voltage, which we relate to a change in the imaginary and real components of the nanowire impedance, respectively. We demonstrate that these changes are described by the Mattis–Bardeen model with an effective temperature. We further study the resonator response to fast-varying gate signals and measure characteristic response times of the order of 40 ns, both in time domain and parametric modulation experiments. Our study elucidates the impact of the gate on the complex impedance of the nanowire in the superconducting state, as well as its dynamic performance, providing a foundation for the design of gate-controlled superconducting devices.

DOI
10.1063/5.0267684

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Several experiments have recently reported on gate-tunable superconducting properties in metallic devices, holding promise for the realization of cryogenic switches, tunable resonators, and superconducting logic. In particular, the suppression of the critical current as a function of the gate voltage has been widely investigated. However, time domain studies are discussed only in a few cases. In this paper, we present a microwave characterization of a gate-controlled Al-capped InAs nanowire embedded in a λ/4 coplanar waveguide resonator. We observe a shift in the resonator frequency and an increase in its internal losses as a function of the gate voltage, which we relate to a change in the imaginary and real components of the nanowire impedance, respectively. We demonstrate that these changes are described by the Mattis–Bardeen model with an effective temperature. We further study the resonator response to fast-varying gate signals and measure characteristic response times of the order of 40 ns, both in time domain and parametric modulation experiments. Our study elucidates the impact of the gate on the complex impedance of the nanowire in the superconducting state, as well as its dynamic performance, providing a foundation for the design of gate-controlled superconducting devices.
Local control of superconducting circuits by high-impedance electrical gates offers potential advantages in superconducting logic, quantum processing units, and cryoelectronics. Recent experiments have reported gate-controlled supercurrent in Dayem bridges made of metallic superconductors, mediated by direct current leakage, out-of-equilibrium phonons, or possibly other mechanisms. However, a time-domain characterization of this effect has been lacking. Here, we integrate Dayem bridges made of niobium on silicon into coplanar waveguide resonators and measure the effect of the gate voltage at steady state and during pulsed operation. We consider two types of arrangements for the gate: a side-coupled gate and a remote injector. In both cases, we observe sizable changes in the real and the imaginary part of the constriction's impedance for gate voltages of the order of 1 V. However, we find striking differences in the time-domain dynamics, with the remote injector providing a faster and more controlled response. Our results contribute to our understanding of gate-controlled superconducting devices and their suitability for applications.
Superconducting circuits are promising candidates for future computational architectures; however, practical applications require fast operation. Here, we demonstrate fast, gate-based switching of an Al nanowire-based superconducting switch in time-domain experiments. We apply voltage pulses to the gate while monitoring the microwave transmission of the device. Utilizing the usual leakage-based operation, these measurements yield a fast, 1-2 ns switching time to the normal state, possibly limited by the bandwidth of our setup, and a 15-20 ns delay in the normal to superconducting transition. However, having a significant capacitance between the gate and the device allows for a different operation, where the displacement current, induced by the fast gate pulses, drives the transition. The switching from superconducting to the normal state yields a similar fast time scale, while in the opposite direction the switching is significantly faster (4-6 ns) than the leakage-based operation, which may be further improved by a better thermal design. The measured short time scales and the displacement current-based switching operation will be important for future fast and low-power-consumption applications.
We study the microwave impedance of extremely high aspect ratio (length/width ≈ 5000) superconducting niobium nitride nanowires. The nanowires are fabricated in a compact meander geometry that is in series with the center conductor of a 50 Ω coplanar waveguide transmission line. The transmission coefficient of the sample is measured up to 20 GHz. At high frequency, a peak in the transmission coefficient is seen. Numerical simulations show that this is a half-wave resonance along the length of the nanowire, where the nanowire acts as a high impedance, slow wave transmission line. This resonance sets the upper frequency limit for these nanowires as inductive elements. Fitting simulations to the measured resonance enables a precise determination of the nanowire's complex sheet impedance at the resonance frequency. The real part is a measure of dissipation, while the imaginary part is dominated by kinetic inductance. We characterize the dependence of the sheet resistance and sheet inductance on both temperature and current and compare the results to recent theoretical predictions for disordered superconductors. These results can aid in the understanding of high frequency devices based on superconducting nanowires. They may also lead to the development of novel superconducting devices such as ultra-compact resonators and slow-wave structures.
We study the microwave impedance of extremely high aspect ratio (length/width ≈ 5000) superconducting niobium nitride nanowires. The nanowires are fabricated in a compact meander geometry that is in series with the center conductor of a 50 Ω coplanar waveguide transmission line. The transmission coefficient of the sample is measured up to 20 GHz. At high frequency, a peak in the transmission coefficient is seen. Numerical simulations show that this is a half-wave resonance along the length of the nanowire, where the nanowire acts as a high impedance, slow wave transmission line. This resonance sets the upper frequency limit for these nanowires as inductive elements. Fitting simulations to the measured resonance enables a precise determination of the nanowire's complex sheet impedance at the resonance frequency. The real part is a measure of dissipation, while the imaginary part is dominated by kinetic inductance. We characterize the dependence of the sheet resistance and sheet inductance on both temperature and current and compare the results to recent theoretical predictions for disordered superconductors. These results can aid in the understanding of high frequency devices based on superconducting nanowires. They may also lead to the development of novel superconducting devices such as ultra-compact resonators and slow-wave structures.
Hybridizing a microwave mode with a quantum state requires precise frequency matching of a superconducting microwave resonator and the corresponding quantum object. However, fabrication always brings imperfections in geometry and material properties, causing deviations from the desired operating frequencies. An effective and universal strategy for their resonant coupling is to tune the frequency of a resonator, as quantum states like phonons are hardly tunable. Here, we demonstrate gate-tunable, titanium-nitride (TiN)-based superconducting resonators by implementing a nanowire inductor whose kinetic inductance is tuned via the gate-controlled supercurrent (GCS) effect. We investigate their responses for different gate biases and observe 4% (∼150 MHz) frequency tuning with decreasing internal quality factors. We also perform temperature-controlled experiments to support phonon-related mechanisms in the GCS effect and the resonance tuning. The GCS effect-based method proposed in this study provides an effective route for locally tunable resonators that can be employed in various hybrid quantum devices.
Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated InAs\mathrm{In}\mathrm{As}InAs-Al\mathrm{Al}Al Josephson junction to a coplanar waveguide resonator, we demonstrate the use of a superconducting element with wideband gate tunability. We show that the resonant frequency is controlled via a gate-tunable Josephson inductance and that the nonlinearity of the InAs\mathrm{In}\mathrm{As}InAs-Al\mathrm{Al}Al junction is nondissipative as is the case with conventional AlOx-Al{\mathrm{Al}\mathrm{O}}_{\mathrm{x}}\text{-Al}AlOx​-Al junctions. As the gate voltage is decreased, the inductive participation of the junction increases up to $44\mathrm{%}$, resulting in the resonant frequency being tuned by over 2GHz2\phantom{\rule{0.2em}{0ex}}\mathrm{GHz}2GHz. Utilizing the wide tunability of the device, we demonstrate that two resonant modes can be adjusted such that they strongly hybridize, exhibiting an avoided-level crossing with a coupling strength of 51MHz51\phantom{\rule{0.2em}{0ex}}\mathrm{MHz}51MHz. Implementing such voltage-tunable resonators is the first step toward realizing wafer-scale continuous voltage control in superconducting circuits for qubit-qubit coupling, quantum limited amplifiers, and quantum memory platforms.