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Laser Resonators, Microresonators, and Beam Control

Quantum photonics in silicon carbide microresonators: multimode and multi-emitter correlations

Daniil M. Lukin, Melissa A. Guidry

Published Mar 12, 2024• 0 citations
Publisher

Abstract

Silicon carbide as a host material uniquely combines CMOS compatible photonics with high-quality optically interfaced qubits and strong optical nonlinearities. In this talk, I will discuss the use of silicon carbide microresonators to explore multimode correlations built through spontaneous pair generation via the optical nonlinearity as well as all-to-all coupling of quantum emitters. I will discuss opportunities to use inverse design and as well as classical cavity design methods for engineering these correlations.

DOI
10.1117/12.3009756

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Silicon carbide as a host material uniquely combines CMOS compatible photonics with high-quality optically interfaced qubits and strong optical nonlinearities. In this talk, I will discuss the use of silicon carbide microresonators to explore multimode correlations built through spontaneous pair generation via the optical nonlinearity as well as all-to-all coupling of quantum emitters. I will discuss opportunities to use inverse design and as well as classical cavity design methods for engineering these correlations.
At the core of most quantum technologies, including quantum networks and quantum simulators, is the development of homogeneous, long lived qubits with excellent optical interfaces, and the development of high efficiency and robust optical interconnects for such qubits. To achieve this goal, we have been studying color centers in diamond (SiV, SnV) and silicon carbide (VSi in 4H SiC), in combination with novel fabrication techniques, and relying on the powerful and fast photonics inverse design approach that we have developed. Our inverse design approach offers a powerful tool to implement classical and quantum photonic circuits with superior properties, including robustness to errors in fabrication and temperature, compact footprints, novel functionalities, and high efficiencies. We illustrate this with a number of demonstrated devices in silicon, diamond, and silicon carbide.
Photonic quantum information processing and communication demand highly integrated device platforms, which can offer high-fidelity control of quantum states and seamless interface with fiber-optic networks simultaneously. Exploiting the unique quantum emitter characteristics compatible with photonic transduction, combined with the outstanding nonlinear optical properties of silicon carbide (SiC), we propose and numerically investigate a single-crystal cubic SiC-on-insulator (3C-SiCOI) platform toward multi-functional integrated quantum photonic circuit. Benchmarking with the state-of-the-art demonstrations on individual components, we have systematically engineered and optimized device specifications and functions, including state control via cavity quantum electrodynamics and frequency conversion between quantum emission and telecommunication wavelengths, while also considering the manufacturing aspects. This work will provide concrete guidelines and quantitative design considerations for realizing future SiCOI integrated photonic circuitry toward quantum information applications.
3C-silicon carbide-on-insulator (3C-SiCOI) is an emerging photonic platform for integrated quantum photonics due to its moderate second- and third-order optical nonlinearities, wide bandgap energy, and compatibility with silicon complementary metal-oxide-semiconductor technologies. In this work, we report our progress in photon-pair generation and quantum state manipulation on the 3C-SiCOI platform. We demonstrate the generation of photon pairs through the spontaneous parametric down-conversion process using modal phase-matching in an elliptical microring resonator on this platform. We will present the design principle and recent progress of our experimental work.