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Photonics

Solid-State Color Centers for Single-Photon Generation

Greta Andrini, Francesco Amanti, Fabrizio Armani, Vittorio Bellani, Vincenzo Bonaiuto, Simone Cammarata, M. Campostrini, Thu Ha Dao, F. De Matteis, Valeria Demontis, Giovanni Di Giuseppe, Sviatoslav Ditalia Tchernij, S. Donati, A. Fontana, J. Forneris, Roberto Francini, Luca Frontini, R. Gunnella, Simone Iadanza, Ali Emre Kaplan, Cosimo Lacava, Valentino Liberali, Francesco Marzioni, Elena Nieto Hernández, E. Pedreschi, Paolo Piergentili, Domenic Prete, P. Prosposito, V. Rigato, C. Roncolato, Francesco Rossella, Andrea Salamon, M. Salvato, F. Sargeni, Jafar Shojaii, Franco Spinella, Alberto Stabile, A. Toncelli, Gabriella Trucco, Valerio Vitali

Published Feb 19, 2024• 28 citations
Publisher

Abstract

Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

DOI
10.3390/photonics11020188

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Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.
Single-photon emitters (SPEs) constitute a foundational resource for quantum technologies, including secure communication, photonic quantum computing, and emerging quantum network architectures. A wide range of quantum materials, from atom-like point defects in bulk crystals to excitonic states in low-dimensional semiconductors, now provide bright, coherent, and scalable sources of non-classical light. Meanwhile, advances in photonic integration have enabled efficient routing, filtering, and on-chip manipulation of these emitters. From this perspective, we survey and discuss the technological landscape in which solid-state emitters interface with quantum sensing, quantum communication, quantum computation, and emerging photonic AI platforms. Further, we discuss the materials landscape underpinning modern single-photon sources from the zero-dimensional, one-dimensional, two-dimensional and three-dimensional materials. Lastly, we highlight key integration pathways for these single-photon emitters into scalable quantum photonic systems.
Abstract Single-photon emitters (SPEs) constitute a foundational resource for quantum technologies, including secure communication, photonic quantum computing, and emerging quantum network architectures. A wide range of quantum materials, from atom-like point defects in bulk crystals to excitonic states in low-dimensional semiconductors, now provide bright, coherent, and scalable sources of non-classical light. Meanwhile, advances in photonic integration have enabled efficient routing, filtering, and on-chip manipulation of these emitters. From this perspective, we survey and discuss the technological landscape in which solid-state emitters interface with quantum sensing, quantum communication, quantum computation, and emerging photonic artificial intelligence platforms. Further, we discuss the materials landscape underpinning modern single-photon sources from the zero-dimensional, one-dimensional, two-dimensional and three-dimensional materials. Lastly, we highlight key integration pathways for these SPEs into scalable quantum photonic systems.
Quantum light and in particular single photons have become essential resources for a growing number of quantum applications including quantum computing, quantum key distribution and quantum metrology. Solid-state atomlike systems such as semiconductor quantum dots and color defects in crystals have become the hallmark of highly pure single photon emitters in the past two decades. A particular interest has been developed in nanocrystal quantum dots (NQDs) and color centers in diamond as potential compact room-temperature emitters. There are however several challenges that inhibit the use of such sources in current technologies including low photon extraction efficiency, low emission rates and relatively low single photon purities. In this work we will review our efforts in overcoming these technical difficulties using several complementary methods including designing several nanoantenna devices that enhance the directionality and emission rate of the nanoemitter. In addition, we developed several temporal heralding techniques to overcome the hurdle of low single photon purity in NQDs in an effort to produce a highly pure, bright and efficient single photon source on-chip.
The development of reliable devices to generate single photons is crucial for applications in quantum cryptography, as well as for fundamental quantum optics experiments. Due to their extremely high photostability at room temperature, optically active defects in solids, the so called color centers, are among the most promising candidates. Single NV (nitrogen-vacancy) centers in diamond have been demonstrated to be able to generate single photons and have already shown advantages compared to attenuated laser pulses in a quantum cryptography experiment. The nitrogen-vacancy center (NV center) in diamond consists of a substitutional nitrogen atom and an adjacent vacancy. This complex exhibits an optical transition with a fluorescence lifetime of 11.6 ns. The room temperature spectrum of the NV center consists of the zero-phonon line at 637 nm and broad phononic sidebands with a FWHM of more than 100 nm. Due to the existence of a shelving level the efficiency of the NV center as a single photon source is limited. Additionally, the high diffraction index of bulk diamond restricts the efficiency to collect the fluorescence light.
Single photons enable the distribution of quantum information over large distances and thus play a major role in quantum technologies such as communication and computing. Solid-state emitters are practical and efficient sources of single photons that can be manufactured in large numbers. When combined with a spin, the resulting spin-photon interfaces can store quantum states for extended periods and serve as the basis for quantum networks and repeaters. Among the many host materials explored over the past few decades, silicon stands out for its advanced nanofabrication, the maturity of its integrated photonics and microelectronics, and its high isotopic purity, which leads to exceptionally long spin coherence. These properties position silicon single-photon emitters and spin-photon interfaces among the most promising hardware platforms for implementing quantum networks and distributed quantum information processors. This review summarizes the current state of the art and open challenges towards coherent single-photon sources and scalable spin-photon interfaces based on color centers and erbium dopants in nanophotonic silicon structures.