Abstract Kinetic inductance travelling-wave parametric amplifiers (KITWPAs) have been demonstrated to achieve high gain over broad bandwidths whilst achieving near quantum-limited noise performance, properties which are extremely important for many ultra-sensitive experiments. In early KITWPA designs, the requirement for phase-matching lead to the creation of a large zero-gain gap in the centre of the gain profile where the peak gain is, which also slightly narrows down the operational bandwidth of the device. This has been mitigated in more recent designs by introducing a DC bias to the KITWPA device, which allows the gap to be tuned away from the amplification band. However, the added DC biasing requires a more complicated experimental setup and potentially leads to unwanted heat leak in the cryogenic environment. Additionally, operation with a DC bias also become challenging at higher frequencies beyond the microwave regime. In this paper, we present the concept of a KITWPA operating in a non-degenerate-pump four-wave mixing (NP-4WM) regime, whereby the injection of two pump tones along with a weak signal results in a broad, flat gain profile that removes the zero-gain gap as well as eliminates the need for a DC bias and the complexities associated with it. We demonstrate how a NP-4WM KITWPA is feasible to achieve broadband amplification at a range of frequencies, first in the microwave range where most KITWPAs reported to-date have been successfully experimentally characterised. We then extend the designs to several millimetre (mm) bands to illustrate how we can use this technique to design a broadband front-end pre-amplifier that covers several Atacama Large Millimetre/sub-millimetre Array (ALMA) Bands.
Abstract Kinetic inductance travelling-wave parametric amplifiers (KITWPAs) have been demonstrated to achieve high gain over broad bandwidths whilst achieving near quantum-limited noise performance, properties which are extremely important for many ultra-sensitive experiments. In early KITWPA designs, the requirement for phase-matching lead to the creation of a large zero-gain gap in the centre of the gain profile where the peak gain is, which also slightly narrows down the operational bandwidth of the device. This has been mitigated in more recent designs by introducing a DC bias to the KITWPA device, which allows the gap to be tuned away from the amplification band. However, the added DC biasing requires a more complicated experimental setup and potentially leads to unwanted heat leak in the cryogenic environment. Additionally, operation with a DC bias also become challenging at higher frequencies beyond the microwave regime. In this paper, we present the concept of a KITWPA operating in a non-degenerate-pump four-wave mixing (NP-4WM) regime, whereby the injection of two pump tones along with a weak signal results in a broad, flat gain profile that removes the zero-gain gap as well as eliminates the need for a DC bias and the complexities associated with it. We demonstrate how a NP-4WM KITWPA is feasible to achieve broadband amplification at a range of frequencies, first in the microwave range where most KITWPAs reported to-date have been successfully experimentally characterised. We then extend the designs to several millimetre (mm) bands to illustrate how we can use this technique to design a broadband front-end pre-amplifier that covers several Atacama Large Millimetre/sub-millimetre Array (ALMA) Bands.
Background Kinetic inductance travelling-wave parametric amplifiers (KITWPAs) have proven effective in achieving high gain over broad bandwidths whilst achieving near quantum-limited noise performance, properties which are extremely important for many ultra-sensitive experiments such as radio/millimetre/sub-millimetre astronomy, neutrino mass experiments, and axion dark matter searches, as well as commercial applications like quantum computational and communication systems. Methods This paper introduces the preliminary experimental exploration of an alternative KITWPA utilising thin titanium nitride (TiN) films as opposed to the conventionally used niobium titanium nitride (NbTiN) films. TiN films exhibit properties that could be advantageous for KITWPA operation, owing to its controllable critical temperature (T c) and physical robustness, hence KITWPAs fabricated from TiN films have the potential to replace NbTiN-based TWPAs for various applications, such as reducing the high pump power required to drive a NbTiN TWPA. Our TiN-based KITWPA devices were designed and fabricated with a 42 cm long coplanar waveguide transmission line patterned into a 100 nm thick TiN film, wound in a double spiral fashion to fit into a 2.2×2.2 cm chip. Results We successfully achieved broadband performance, with the best device displaying a peak averaged gain of ~5 dB with a bandwidth of ~3–13 GHz, making this one of the first broadband gain measurements of a TiN KITWPA reported in the literature. Despite this, the measured gain in all batches was lower than simulated due unexpected additional loss mechanisms. Conclusions The preliminary results presented here suggest that TiN films are suitable for KITWPA operation, although further investigation is required to improve the gain performance.
Kinetic inductance traveling-wave parametric amplifiers (KI-TWPAs) have a wide instantaneous bandwidth with a near quantum-limited noise performance and a relatively high dynamic range. Because of this, they are suitable readout devices for cryogenic detectors and superconducting qubits and have a variety of applications in quantum sensing. This work discusses the design, fabrication, and performance of a KI-TWPA based on four-wave mixing in a NbTiN microstrip transmission line. This device amplifies a signal band from 4 to 8 GHz without contamination from image tones, which are produced in a separate higher frequency band. The 4–8 GHz band is commonly used to read out cryogenic detectors, such as microwave kinetic inductance detectors and Josephson junction-based qubits. We report a measured maximum gain of over 20 dB using four-wave mixing with a 1 dB gain compression point of −58 dBm at 15 dB of gain over that band. The bandwidth and peak gain are tunable by adjusting the pump-tone frequency and power. Using a Y-factor method, we measure an amplifier-added noise of 0.5 ≤ Nadded ≤ 1.5 photons from 4.5 to 8 GHz.
Superconducting travelling-wave parametric amplifiers (TWPAs) provide broadband gain, low added noise, and high dynamic range, making them attractive for applications requiring wide instantaneous bandwidth. This is crucial for amplifying multiplexed narrow band signals spread over a wide frequency range, such as qubit resonator arrays, or amplifying inherently wide band signals, such as in spectrometers or radiometers. In many cases, however, the useful bandwidth of a TWPA is limited by the production of the idler tone at an image frequency. For three-wave-mixing (3WM) TWPAs, for example, an input signal at fs is indistinguishable from one at fp−fs, which can produce spectral ambiguity when the input spectrum is broadband or not known in advance. We experimentally demonstrate a balanced architecture that doubles the instantaneous image-rejected bandwidth available to a 3WM TWPA by spatially separating the amplified signal from the output pump and generated idler, which resolves the sideband degeneracy. The architecture consists of two amplifiers connected between a pair of 180∘ hybrid couplers, with the signal and pump injected and output through the sum and difference ports, respectively. Using two kinetic-inductance TWPAs, we demonstrate approximately 20 dB of signal gain across nearly an octave of bandwidth, together with pump rejection below --20 dB and an average image rejection of approximately --15 dB over the operating band. These results establish balanced TWPAs as a practical approach to broadband parametric amplification, enabling improved contamination free bandwidth and eliminating the need for complex filtering.
Abstract It is expected that the operation of microwave kinetic inductance travelling wave parametric amplifiers (KITWPAs) can be extended to the millimetre (mm) and the sub-mm wavelength range as long as the frequency is below the gap frequency of the superconducting film. This paper presents possible mm-wave designs for KITWPAs based on microstrip transmission lines. Our device is designed based on the BCS (Bardeen–Cooper–Schrieffer) model which successfully reproduces the measured transmission profile, gain, bandwidth, and nonlinear response of a fabricated KITWPA operating in the Ka-band, and includes the millimetre-wave dielectric loss determined by fitting the quality factor of a W-band microstrip resonator. We suggest a layout for a KITWPA operating near 220 GHz that can be fabricated using the same superconducting properties as the Ka-band device and can be coupled to a waveguide system. We conclude the paper by extending the 220 GHz design to higher frequency regimes approaching 1 THz.
Background: Kinetic Inductance Travelling Wave Parametric Amplifiers (KITWPAs) are a variant of superconducting amplifier that can potentially achieve high gain with quantum-limited noise performance over broad bandwidth, which is important for many ultra-sensitive experiments. In this paper, we present a novel modelling technique that can better capture the electromagnetic behaviour of a KITWPA without the translation symmetry assumption, allowing us to flexibly explore the use of more complex transmission line structures and better predict their performance. Methods: In order to design a KITWPA with optimal performance, we investigate the use of different superconducting thin film materials, and compare their pros and cons in forming a high-gain low-loss medium feasible for amplification. We establish that if the film thickness can be controlled precisely, the material used has less impact on the performance of the device, as long as it is topologically defect-free and operating within its superconducting regime. With this insight, we propose the use of Titanium Nitride (TiN) film for our KITWPA as its critical temperature can be easily altered to suit our applications. We further investigate the topological effect of different commonly used superconducting transmission line structures with the TiN film, including the effect of various non-conducting materials required to form the amplifier. Results: Both of these comprehensive studies led us to two configurations of the KITWPA: 1) A low-loss 100 nm thick TiN coplanar waveguide amplifier, and 2) A compact 50 nm TiN inverted microstrip amplifier. We utilise the novel modelling technique described in the first part of the paper to explore and investigate the optimal design and operational setup required to achieve high gain with the broadest bandwidth for both KITWPAs, including the effect of loss. Conclusions: Finally, we conclude the paper with the actual layout and the predicted gain-bandwidth product of our KITWPAs.
We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone we are able to generate parametric amplification using three-wave mixing. The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. Compared to similarly constructed four-wave mixing amplifiers, these devices operate with the RF pump at ~20 dB lower power and at frequencies far from the signal. This will permit easier integration into large scale qubit and detector applications.