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arXiv:1509.09280 · Applied Physics Letters

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

Michael R. Vissers, R. P. Erickson, H. S. Ku, Leila R. Vale, Xian Wu, G. C. Hilton, David P. Pappas

Published Jan 4, 2016• 128 citations
arXivHTMLPDF

Abstract

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone we are able to generate parametric amplification using three-wave mixing. The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. Compared to similarly constructed four-wave mixing amplifiers, these devices operate with the RF pump at ~20 dB lower power and at frequencies far from the signal. This will permit easier integration into large scale qubit and detector applications.

DOI
10.1063/1.4937922

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We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone we are able to generate parametric amplification using three-wave mixing. The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. Compared to similarly constructed four-wave mixing amplifiers, these devices operate with the RF pump at ~20 dB lower power and at frequencies far from the signal. This will permit easier integration into large scale qubit and detector applications.
Kinetic inductance traveling-wave parametric amplifiers (KI-TWPAs) have a wide instantaneous bandwidth with a near quantum-limited noise performance and a relatively high dynamic range. Because of this, they are suitable readout devices for cryogenic detectors and superconducting qubits and have a variety of applications in quantum sensing. This work discusses the design, fabrication, and performance of a KI-TWPA based on four-wave mixing in a NbTiN microstrip transmission line. This device amplifies a signal band from 4 to 8 GHz without contamination from image tones, which are produced in a separate higher frequency band. The 4–8 GHz band is commonly used to read out cryogenic detectors, such as microwave kinetic inductance detectors and Josephson junction-based qubits. We report a measured maximum gain of over 20 dB using four-wave mixing with a 1 dB gain compression point of −58 dBm at 15 dB of gain over that band. The bandwidth and peak gain are tunable by adjusting the pump-tone frequency and power. Using a Y-factor method, we measure an amplifier-added noise of 0.5 ≤ Nadded ≤ 1.5 photons from 4.5 to 8 GHz.
We present a theoretical model and experimental characterization of a microwave kinetic inductance traveling-wave (KIT) amplifier, whose noise performance, measured by a shot-noise tunnel junction (SNTJ), approaches the quantum limit.Biased with a dc current, this amplifier operates in a three-wave mixing fashion, thereby reducing by several orders of magnitude the power of the microwave pump tone and associated parasitic heating compared to conventional four-wave mixing KIT amplifier devices.It consists of a 50 artificial transmission line whose dispersion allows for a controlled amplification bandwidth.We measure 16.5 +1 -1.3 dB of gain across a 2 GHz bandwidth with an input 1 dB compression power of -63 dBm, in qualitative agreement with theory.Using a theoretical framework that accounts for the SNTJgenerated noise entering both the signal and idler ports of the KIT amplifier, we measure the system-added noise of an amplification chain that integrates the KIT amplifier as the first amplifier.This system-added noise, 3.1 ± 0.6 quanta (equivalent to 0.66 ± 0.15 K) between 3.5 and 5.5 GHz, is the one that a device replacing the SNTJ in that chain would see.This KIT amplifier is therefore suitable to read large arrays of microwave kinetic inductance detectors and promising for multiplexed superconducting qubit readout.
Abstract A Kinetic Inductance Traveling Wave Amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly niobium titanium nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, and compression power and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated from practical device readout systems. Using a KIT as the first amplifier in the readout chain of an unoptimized microwave SQUID multiplexer coupled to a transition-edge sensor microcalorimeter, we see an initial improvement in the flux noise [1]. One challenge in KIT integration is the considerable microwave pump power required to drive the non-linearity. To address this, we have initiated efforts to reduce the pump power by using thinner NbTiN films and an inverted microstrip transmission line design. In this article, we present the new transmission line design, fabrication procedure, and initial device characterization—including gain and added noise. These devices exhibit over 10 dB of gain with a 3 dB bandwidth of approximately 5.5–7.25 GHz, a maximum practical gain of 12 dB, and typical gain ripple under 4 dB peak to peak. We observe an appreciable impedance mismatch in the NbTiN transmission line, which is likely the source of the majority of the gain ripple. Finally, we perform an initial noise characterization and demonstrate system-added noise of three quanta or less over nearly the entire 3 dB bandwidth.
Superconducting quantum circuits are typically operated at low temperatures (mK), necessitating cryogenic low-noise, wideband amplifiers for signal readout ultimately also compatible with room temperature electronics. While existing implementations partly meet these criteria, they suffer from certain limitations, such as rippled transmission spectra or limited dynamic range, some of which are caused by the lack of proper impedance matching. We develop a microstrip kinetic inductance traveling wave amplifier, exploiting the nonlinear kinetic inductance of tungsten-silicide for wave-mixing of the signal and a pump, and engineer the impedance to 50 Ω, while decreasing the phase velocity, with benefit for the amplification. Despite losses, pumping on our device amplifies the signal by 15 dB over a 2 GHz bandwidth.
We present a detailed simulation and design framework for realizing traveling wave parametric amplifiers (TWPAs) using the nonlinear kinetic inductance of disordered superconductors -- in our case niobium-titanium-nitride (NbTiN). These kinetic inductance TWPAs (KITs) operate via three-wave mixing (3WM) to achieve high broadband gain and near-quantum-limited (nQL) noise. Representative fabricated devices -- realized using an inverted microstrip (IMS), dispersion-engineered, artificial transmission line -- demonstrate power gains above 25 dB, bandwidths beyond 3 GHz, and achieve ultimate system noise levels of 1.1 quanta even when operated with no magnetic shielding. These performance metrics are competitive with state-of-the-art Josephson-junction-based TWPAs but involve simpler fabrication and able to providing three orders of magnitude higher dynamic range (IIP1=−68IIP_1 = -68IIP1​=−68 dBm, IIP3=−55IIP_3 = -55IIP3​=−55 dBm), and high magnetic field resilience -- making KITs an attractive technology for highly multiplexed readout of quantum information and superconducting detector systems.
We present the design and experimental characterization of a kinetic-inductance traveling-wave parametric amplifier (KI-TWPA) for sub-GHz frequencies. KI-TWPAs amplify signals through nonlinear mixing processes supported by the nonlinear kinetic inductance of a superconducting transmission line. The device described here utilizes a compactly meandered TiN microstrip transmission line to achieve the length needed to amplify sub-GHz signals. It is operated in a frequency translating mode where the amplified signal tone is terminated at the output of the amplifier, and the idler tone at approximately 2.5~GHz is brought out of the cryostat. By varying the pump frequency, a gain of up to 22 dB was achieved in a tunable range from about 450 to 850~MHz. Use of TiN as the nonlinear element allows for a reduction of the required pump power by roughly an order of magnitude relative to NbTiN, which has been used for previous KI-TWPA implementations. This amplifier has the potential to enable high-sensitivity and high-speed measurements in a wide range of applications, such as quantum computing, astrophysics, and dark matter detection.