Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Carbon Trends

Laser writing of preferentially orientated nitrogen-vacancy centers in diamond

Kohei Kinouchi, Yasuhiko Shimotsuma, Mitsuharu Uemoto, Masanori Fujiwara, Norikazu Mizuochi, Masahiro Shimizu, Kiyotaka Miura

Published Dec 1, 2023• 6 citations
Publisher

Abstract

Nitrogen-vacancy centers in diamond have gained widespread attention as quantum systems that can be applied in quantum information devices. The excellent properties of quantum devices can be enhanced using preferentially oriented nitrogen-vacancy (NV) centers. However, thus far, orientation control has been achieved only via chemical vapor deposition. In this study, we demonstrate the creation of preferentially oriented NV centers via laser writing. The alignment ratio of ensemble NV centers is biased along the direction parallel to [111], depending on the femtosecond laser polarization, causing an increase of 55% in contrast to the optically magnetic resonance signal at maximum compared with 25% in random orientation. Based on time-dependent density-functional theory (TDDFT) simulations and experimental observations, such complex polarization dependence can be attributed to the anisotropy of electron excitation. This technique provides a new optical fabrication method for engineered materials and devices used in quantum technology.

DOI
10.1016/j.cartre.2023.100318

Related papers

Production of oriented nitrogen-vacancy color centers in synthetic diamond

Andrew Mark Edmonds, Ulrika F. S. D’Haenens-Johansson, Robin J. Cruddace +6 more

The negatively charged nitrogen-vacancy (${\mathrm{NV}}^{\ensuremath{-}}$) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically $<0.5$%) incorporated during homoepitaxial diamond growth by chemical vapor deposition (CVD) is in the form of undecorated ${\mathrm{NV}}^{\ensuremath{-}}$ centers. Furthermore, studies on CVD diamond grown on $(110)$-oriented substrates show a near 100% preferential orientation of NV centers along only the $[111]$ and $[\overline{1}\overline{1}1]$ directions, rather than the four possible orientations. The results indicate that NV centers grow in as units, as the diamond is deposited, rather than by migration and association of their components. The NV unit of the ${\mathrm{NVH}}^{\ensuremath{-}}$ is similarly preferentially oriented, but it is not possible to determine whether this defect was formed by H capture at a preferentially aligned NV center or as a complete unit. Reducing the number of NV orientations from four orientations to two orientations should lead to increased optically detected magnetic resonance contrast and thus improved magnetic sensitivity in ensemble-based magnetometry.

arXiv:1112.5757•Physical Review B•Jul 5, 2012•179 citations

Fabrication of oriented NV center arrays in diamond via femtosecond laser writing and reorientation

Kai Klink, Andrew Raj Kirkpatrick, Yukihiro Tadokoro +2 more

Introduction Nitrogen-vacancy (NV) centers in diamond are widely recognized as highly promising solid-state quantum sensors due to their long room temperature coherence times and atomic-scale size, which enable exceptional sensitivity and nanoscale spatial resolution under ambient conditions. Ultrafast laser writing has demonstrated the deterministic spatial control of individual NV− centers, however, the resulting random orientation of the defect axis limits the magnetic field sensitivity and signal contrast. Methods We developed an all-optical approach for reorienting laser-written NV− centers to lie along a specific crystallographic axis using femtosecond laser annealing. The orientation is determined by polarization analysis, and the annealing and subsequent polarization analysis are repeated until the desired orientation is observed. Results Our method achieves deterministic alignment of NV− centers along the optical axis in (111)-oriented diamond substrates and allows selection between two observable orientation classes in (100)-oriented substrates. The reorientation preserves spatial ordering while producing uniform orientation across arrays of NV− centers. Discussion This approach enables scalable fabrication of orientation-controlled NV− arrays, and paves the way for scalable, high performance quantum devices based on orientation-controlled NV− centers.

arXiv:2507.14047•Frontiers in Quantum Science and Technology•Sep 23, 2025•7 citations

Perfect selective alignment of nitrogen-vacancy centers in diamond

Takahiro Fukui, Yuki Doi, Takehide Miyazaki +14 more

Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To exploit these characteristics, precise control of the orientation of the NV axis in the lattice is essential. Here we show that the orientation of more than 99% of the NV centers can be aligned along the [111] axis by chemical vapor deposition homoepitaxial growth on (111) substrates. We also discuss the alignment mechanisms. Our result enables a fourfold improvement in the magnetic field sensitivity and opens new avenues to the optimum design of NV center devices.

arXiv:1403.5057•Applied Physics Express•Apr 9, 2014•138 citations

Properties of implanted and CVD incorporated nitrogen-vacancy centers: preferential charge state and preferential orientation

Kai‐Mei C. Fu, Charles Santori, Paul E. Barclay +4 more

The combination of the long electron state spin coherence time and the optical coupling of the ground electronic states to an excited state manifold makes the nitrogen-vacancy (NV) center in diamond an attractive candidate for quantum information processing. To date the best spin and optical properties have been found in centers deep within the diamond crystal. For useful devices it will be necessary to engineer NVs with similar properties close to the diamond surface. We report on properties including charge state control and preferential orientation for near surface NVs formed either in CVD growth or through implantation and annealing.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Feb 10, 2011•4 citations

Quantifying selective alignment of ensemble nitrogen-vacancy centers in (111) diamond

Kosuke Tahara, Hayato Ozawa, Takayuki Iwasaki +2 more

Selective alignment of nitrogen-vacancy (NV) centers in diamond is an important technique towards its applications. Quantification of the alignment ratio is necessary to design the optimized diamond samples. However, this is not a straightforward problem for dense ensemble of the NV centers. We estimate the alignment ratio of ensemble NV centers along the [111] direction in (111) diamond by optically detected magnetic resonance measurements. Diamond films deposited by N2 doped chemical vapor deposition have NV center densities over 1 × 1015 cm−3 and alignment ratios over 75%. Although spin coherence time (T2) is limited to a few μs by electron spins of nitrogen impurities, the combination of the selective alignment and the high density can be a possible way to optimize NV-containing diamond samples for the sensing applications.

Applied Physics Letters•Nov 9, 2015•39 citations

Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

Linh Pham, Nir Bar‐Gill, David Le Sage +6 more

We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the ${100}$ face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.

arXiv:1207.3363•Physical Review B•Sep 6, 2012•98 citations
Nitrogen-vacancy centers in diamond have gained widespread attention as quantum systems that can be applied in quantum information devices. The excellent properties of quantum devices can be enhanced using preferentially oriented nitrogen-vacancy (NV) centers. However, thus far, orientation control has been achieved only via chemical vapor deposition. In this study, we demonstrate the creation of preferentially oriented NV centers via laser writing. The alignment ratio of ensemble NV centers is biased along the direction parallel to [111], depending on the femtosecond laser polarization, causing an increase of 55% in contrast to the optically magnetic resonance signal at maximum compared with 25% in random orientation. Based on time-dependent density-functional theory (TDDFT) simulations and experimental observations, such complex polarization dependence can be attributed to the anisotropy of electron excitation. This technique provides a new optical fabrication method for engineered materials and devices used in quantum technology.
The negatively charged nitrogen-vacancy (${\mathrm{NV}}^{\ensuremath{-}}$) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically <0.5<0.5<0.5%) incorporated during homoepitaxial diamond growth by chemical vapor deposition (CVD) is in the form of undecorated ${\mathrm{NV}}^{\ensuremath{-}}$ centers. Furthermore, studies on CVD diamond grown on (110)(110)(110)-oriented substrates show a near 100% preferential orientation of NV centers along only the [111][111][111] and [1‾1‾1][\overline{1}\overline{1}1][111] directions, rather than the four possible orientations. The results indicate that NV centers grow in as units, as the diamond is deposited, rather than by migration and association of their components. The NV unit of the ${\mathrm{NVH}}^{\ensuremath{-}}$ is similarly preferentially oriented, but it is not possible to determine whether this defect was formed by H capture at a preferentially aligned NV center or as a complete unit. Reducing the number of NV orientations from four orientations to two orientations should lead to increased optically detected magnetic resonance contrast and thus improved magnetic sensitivity in ensemble-based magnetometry.
Introduction Nitrogen-vacancy (NV) centers in diamond are widely recognized as highly promising solid-state quantum sensors due to their long room temperature coherence times and atomic-scale size, which enable exceptional sensitivity and nanoscale spatial resolution under ambient conditions. Ultrafast laser writing has demonstrated the deterministic spatial control of individual NV− centers, however, the resulting random orientation of the defect axis limits the magnetic field sensitivity and signal contrast. Methods We developed an all-optical approach for reorienting laser-written NV− centers to lie along a specific crystallographic axis using femtosecond laser annealing. The orientation is determined by polarization analysis, and the annealing and subsequent polarization analysis are repeated until the desired orientation is observed. Results Our method achieves deterministic alignment of NV− centers along the optical axis in (111)-oriented diamond substrates and allows selection between two observable orientation classes in (100)-oriented substrates. The reorientation preserves spatial ordering while producing uniform orientation across arrays of NV− centers. Discussion This approach enables scalable fabrication of orientation-controlled NV− arrays, and paves the way for scalable, high performance quantum devices based on orientation-controlled NV− centers.
Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To exploit these characteristics, precise control of the orientation of the NV axis in the lattice is essential. Here we show that the orientation of more than 99% of the NV centers can be aligned along the [111] axis by chemical vapor deposition homoepitaxial growth on (111) substrates. We also discuss the alignment mechanisms. Our result enables a fourfold improvement in the magnetic field sensitivity and opens new avenues to the optimum design of NV center devices.
The combination of the long electron state spin coherence time and the optical coupling of the ground electronic states to an excited state manifold makes the nitrogen-vacancy (NV) center in diamond an attractive candidate for quantum information processing. To date the best spin and optical properties have been found in centers deep within the diamond crystal. For useful devices it will be necessary to engineer NVs with similar properties close to the diamond surface. We report on properties including charge state control and preferential orientation for near surface NVs formed either in CVD growth or through implantation and annealing.
Selective alignment of nitrogen-vacancy (NV) centers in diamond is an important technique towards its applications. Quantification of the alignment ratio is necessary to design the optimized diamond samples. However, this is not a straightforward problem for dense ensemble of the NV centers. We estimate the alignment ratio of ensemble NV centers along the [111] direction in (111) diamond by optically detected magnetic resonance measurements. Diamond films deposited by N2 doped chemical vapor deposition have NV center densities over 1 × 1015 cm−3 and alignment ratios over 75%. Although spin coherence time (T2) is limited to a few μs by electron spins of nitrogen impurities, the combination of the selective alignment and the high density can be a possible way to optimize NV-containing diamond samples for the sensing applications.
We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the 100{100}100 face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.