Back-action supercurrent diodes
Francesco Giazotto, Daniel Margineda, Alessandro Crippa, Elia Strambini, Yuri Fukaya, Maria Teresa Mercaldo, Carmine Ortix, Mario Cuoco
Abstract
Abstract Back-action refers to a response that retro-acts on a system to tailor its properties with respect to an external stimulus. This self-induced effect generally belongs to both the natural and technological realm, ranging from neural networks [1] to optics [2] and electronic circuitry [3]. In electronics, back-action mechanisms are at the heart of many classes of devices such as amplifiers, oscillators, and sensors [4]. Here, we demonstrate that back-action can be successfully exploited to achieve non-reciprocal transport in superconducting circuits. Our device realizes a supercurrent diode, since the dissipationless current flows in one direction whereas dissipative transport occurs in the opposite direction. Supercurrent diodes presented so far rely on magnetic elements or vortices to mediate charge transport or external magnetic fields to break time-reversal symmetry [5-9]. In our implementation, back-action solely turns a conventional reciprocal superconducting weak link with no asymmetry between the current bias directions into a diode, where the critical current amplitude depends on the bias sign. The self-interaction of the supercurrent with the device stems from the gate tunability of the critical current, which uniquely promotes up to 88% of magnetic field-free signal rectification and diode functionality with selectable polarity. The concept we introduce is very general and can be applied directly to a large variety of devices, thereby opening novel functionalities in superconducting electronics.