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arXiv:2610.05536

Field-free dual superconducting diode via photon-assisted interference

Laura Borgongino, Rubén Seoane Souto, José Luis del Olmo, Ramón Aguado, Alessandro Crippa, Francesco Giazotto, Elia Strambini

Published Oct 4, 2026• 0 citations
arXivHTMLPDF

Abstract

Non-reciprocal transport underpins key functionalities in signal processing and logic; however, conventional semiconductor diodes exhibit reduced performance at sub-Kelvin temperatures. As cryogenic electronics continue to scale, there is increasing demand for diode operation compatible with low-temperature and low-dissipation conditions. This need has driven the development of alternatives to p-n junctions that rely on non-reciprocal electron transport mechanisms efficient in the deep-cryogenic regime. Superconducting devices constitute a natural low-loss platform, yet most existing superconducting diodes are restricted to either Cooper-pair or quasiparticle transport, often requiring complex material stacks, asymmetric geometries, or external magnetic fields. No single, geometrically symmetric junction has yet integrated rectification across both transport channels to achieve vanishing resistance under forward bias and strongly suppressed conduction under reverse bias. Here, we demonstrate a dynamically reconfigurable dual-function superconducting diode based on a conventional Al/AlOx/Al tunnel junction. Via microwave biharmonic driving, we exploit multi-tone photon-assisted tunneling to independently control dissipationless and dissipative transport channels within the same device. Varying the microwave drive amplitude induces a transition from a supercurrent diode to an ideal quasiparticle diode, achieving rectification efficiencies exceeding those of conventional Schottky diodes and contemporary superconducting diodes. We further demonstrate AC signal rectification under both current-bias and voltage-bias configurations. Finally, we implement a proof-of-concept "absolute diode" that combines zero forward resistance with strongly suppressed reverse conduction. This tunable approach provides a versatile building block for low-power cryogenic electronic architectures.

DOI
10.48550/arxiv.2610.05536

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Non-reciprocal transport underpins key functionalities in signal processing and logic; however, conventional semiconductor diodes exhibit reduced performance at sub-Kelvin temperatures. As cryogenic electronics continue to scale, there is increasing demand for diode operation compatible with low-temperature and low-dissipation conditions. This need has driven the development of alternatives to p-n junctions that rely on non-reciprocal electron transport mechanisms efficient in the deep-cryogenic regime. Superconducting devices constitute a natural low-loss platform, yet most existing superconducting diodes are restricted to either Cooper-pair or quasiparticle transport, often requiring complex material stacks, asymmetric geometries, or external magnetic fields. No single, geometrically symmetric junction has yet integrated rectification across both transport channels to achieve vanishing resistance under forward bias and strongly suppressed conduction under reverse bias. Here, we demonstrate a dynamically reconfigurable dual-function superconducting diode based on a conventional Al/AlOx/Al tunnel junction. Via microwave biharmonic driving, we exploit multi-tone photon-assisted tunneling to independently control dissipationless and dissipative transport channels within the same device. Varying the microwave drive amplitude induces a transition from a supercurrent diode to an ideal quasiparticle diode, achieving rectification efficiencies exceeding those of conventional Schottky diodes and contemporary superconducting diodes. We further demonstrate AC signal rectification under both current-bias and voltage-bias configurations. Finally, we implement a proof-of-concept "absolute diode" that combines zero forward resistance with strongly suppressed reverse conduction. This tunable approach provides a versatile building block for low-power cryogenic electronic architectures.
Abstract A Josephson diode is a superconducting circuit element that enables non-reciprocal transport, allowing a dissipationless supercurrent to preferentially flow in a single direction. Existing methods for achieving the required symmetry breaking mostly rely on specifically-designed materials or carefully-engineered circuits composed of multiple Josephson junctions. Here, we investigate the diode effect induced by applying a biharmonic drive to a conventional superconducting tunnel-junction. In the slow-driving regime, the effect is straightforward to understand in a simple adiabatic picture, providing insight in the tunability of the magnitude and directionality of the diode effect through the drive parameters. We then focus on the fast-driving regime, where we show how the more complex physics underlying the dynamics of the junction can be approximated as a cascaded two-tone mixing process. We derive analytic expressions for the diode efficiency as a function of drive parameters in the limit of small driving amplitudes.
A Josephson diode is a superconducting circuit element that enables non-reciprocal transport, allowing a dissipationless supercurrent to preferentially flow in a single direction. Existing methods for achieving the required symmetry breaking mostly rely on specifically-designed materials or carefully-engineered circuits composed of multiple Josephson junctions. Here, we demonstrate that applying a biharmonic drive to a conventional superconducting tunnel-junction induces a diode effect through harmonic mixing processes that shift the supercurrent region. We show that, in a conventional tunnel junction, unity efficiency is achievable while maintaining a large supercurrent. Moreover, the relative phase between the two driving tones determines the directionality of the diode, which can be tuned in situ.
Abstract Back-action refers to a response that retro-acts on a system to tailor its properties with respect to an external stimulus. This self-induced effect generally belongs to both the natural and technological realm, ranging from neural networks [1] to optics [2] and electronic circuitry [3]. In electronics, back-action mechanisms are at the heart of many classes of devices such as amplifiers, oscillators, and sensors [4]. Here, we demonstrate that back-action can be successfully exploited to achieve non-reciprocal transport in superconducting circuits. Our device realizes a supercurrent diode, since the dissipationless current flows in one direction whereas dissipative transport occurs in the opposite direction. Supercurrent diodes presented so far rely on magnetic elements or vortices to mediate charge transport or external magnetic fields to break time-reversal symmetry [5-9]. In our implementation, back-action solely turns a conventional reciprocal superconducting weak link with no asymmetry between the current bias directions into a diode, where the critical current amplitude depends on the bias sign. The self-interaction of the supercurrent with the device stems from the gate tunability of the critical current, which uniquely promotes up to 88% of magnetic field-free signal rectification and diode functionality with selectable polarity. The concept we introduce is very general and can be applied directly to a large variety of devices, thereby opening novel functionalities in superconducting electronics.
We demonstrate a practical, field-free superconducting diode based on conventional Nb thin-film technology by integrating an intrinsic superconducting phase battery with an asymmetric DC superconducting quantum interference device. Unlike other approaches that require external magnetic fields or gate voltages to break time-reversal symmetry, our design achieves nonreciprocal supercurrents with on-chip phase bias, making it highly suitable for practical applications. The critical operational parameters, including the backward breakdown voltage and reverse resistance, are well defined by the Nb film gap voltage (∼2.8 mV) and the sub-gap resistance of the un-shunted Nb/Al–AlOx/Nb Josephson junctions. The resulting diode exhibits a forward supercurrent of 168 μA at 4.2 K, with a diode efficiency reaching 40%, a comprehensive performance exceeding prior field-free superconducting diodes. To validate its practicality, we fabricate and characterize a superconducting full-wave rectifier consisting of four such diodes. The demonstration of this rectifier highlights its potential as a DC source for superconducting digital circuits, paving the way for scalable, energy-efficient superconducting electronics.
Controlling heat flow in small quantum systems is a central goal of quantum thermodynamics and nanoscale transport. A key challenge is to achieve strong thermal rectification without suppressing the transmitted heat current, a tradeoff that often arises in static diode configurations. We establish a Floquet-control mechanism in a minimal quantum thermal diode formed by two longitudinally modulated Ising-coupled qubits, each coupled to an independent thermal reservoir. From a microscopic system--bath model, we derive a Floquet--LGKS master equation that resolves the drive-assisted transition channels. The resonant undriven device with left--right symmetric bath couplings serves as the reciprocal benchmark, while static detuning provides a rectifying reference with reduced heat current. Single-side driving breaks this reciprocal structure by creating a Floquet-dressed contact opposite a purely thermal contact. For this configuration, we obtain a compact steady-state current formula and an exact blocking condition for suppressing one bias direction while retaining finite transport in the opposite direction. In the weak sinusoidal-drive regime, rectification begins quadratically in the modulation amplitude. Dual-side driving adds a Floquet pumping contribution to the interaction-mediated current, so complete blocking requires cancellation of both contributions. These results establish contact-selective Floquet dressing as a design principle for controllable heat-flow asymmetry in minimal quantum thermal devices.
Superconducting diodes enable dissipationless directional transport, yet achieving electrical tunability and scalability remains a major challenge for circuit-level integration. Here, we demonstrate an electrothermal-switch superconducting diode in which a gate-controlled nanoscale hotspot dynamically breaks inversion symmetry in a superconducting nanowire. This mechanism gives rise to two coexisting non-reciprocal transport regimes, one associated with a non-reciprocal superconducting-to-normal transition and the other with ratchet-like vortex dynamics, both originating from the same electrothermal-switch process. The diode exhibits efficiencies up to 42 and 60% for the two regimes, respectively, and can be electrically switched on, off, or reversed in polarity in situ by applying a small gate current. These capabilities enable programmable superconducting circuits that realize electrically reconfigurable full-wave and half-wave rectification. The lithography-compatible design, high performance, and gate-controlled functionality establish a scalable platform for programmable superconducting electronics and hybrid quantum systems.