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Optical Materials Express

Effect of the nanopillar diameter on diamond silicon vacancy center spin lifetime

T. Lutz, Tamiko Masuda, John Patrick Hadden, Ilja Fescenko, Víctor M. Acosta, Wolfgang Tittel, Paul E. Barclay

Published Nov 17, 2023• 2 citations
Publisher

Abstract

Color centers in diamond micro and nano-structures play an important role in a wide range of quantum technologies. However, obtaining high-quality color centers in small structures is challenging, as properties such as spin population lifetimes can be affected by the transition from a bulk to nanostructured crystal host. In this manuscript, we measure how population lifetimes of silicon vacancy center orbital states change when they are created in nanopillars whose diameters vary from 1 μ m to 120 nm. We also discuss the influence of annealing methods on the silicon vacancy inhomogeneous linewidth. After selecting a sample with low inhomogeneous broadening and patterning it with nanopillars, we expected that restricted vibrational modes in the smallest structures could extend spin population lifetimes. However, we found that this effect was masked by other effects that reduced population lifetimes, suggesting that imperfections in the crystal lattice or surface damage caused by etching can influence SiV spins.

DOI
10.1364/ome.503513

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Color centers in diamond micro and nano-structures play an important role in a wide range of quantum technologies. However, obtaining high-quality color centers in small structures is challenging, as properties such as spin population lifetimes can be affected by the transition from a bulk to nanostructured crystal host. In this manuscript, we measure how population lifetimes of silicon vacancy center orbital states change when they are created in nanopillars whose diameters vary from 1 μ m to 120 nm. We also discuss the influence of annealing methods on the silicon vacancy inhomogeneous linewidth. After selecting a sample with low inhomogeneous broadening and patterning it with nanopillars, we expected that restricted vibrational modes in the smallest structures could extend spin population lifetimes. However, we found that this effect was masked by other effects that reduced population lifetimes, suggesting that imperfections in the crystal lattice or surface damage caused by etching can influence SiV spins.
Color centers in diamond micro and nano structures are under investigation for a plethora of applications. However, obtaining high quality color centers in small structures is challenging, and little is known about how properties such as spin population lifetimes change during the transition from bulk to micro and nano structures. In this manuscript, we studied various ways to prepare diamond samples containing silicon vacancy centers and measured how population lifetimes of orbital states change in pillars as we varied their dimensions from approximately 1 μμμm to 120 nm. We also researched the influence of the properties of the diamond substrate and the implantation and annealing methods on the silicon vacancy inhomogeneous linewidth and orbital lifetime. Our measurements show that nominally identical diamond samples can display significantly distinct inhomogeneous broadening. We observed weak indications that restricted vibrational modes in small structures may extend population lifetimes. However, imperfections in the crystal lattice or surface damage caused by etching reduce population lifetimes, especially in the smallest structures.
High Resolution Image Download MS PowerPoint Slide The negatively charged silicon vacancy center (SiV – ) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV – centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV – with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV – for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.
Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.
Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs’ excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.
Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.