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EPJ Web of Conferences

AlGaAs Bragg reflection waveguides for hybrid quantum photonic devices

Lorenzo Lazzari, Jérémie Schuhmann, Aristide Lemaître, Maria I. Amanti, F. Bœuf, Fabrice Raineri, F. Baboux, S. Ducci

Published Jan 1, 2023• 1 citation
Publisher

Abstract

Hybrid photonic devices represent a promising solution to the effective on-chip integration of all the components required for the generation, manipulation and detection of non-classical states of light encoding quantum information. We present an AlGaAs source of highly entangled photon pairs envisioned for the hybridization with silicon-on-insulator integrated platforms, in order to take benefit from the strong second order nonlinearity and the compliance with electrical pumping of the III-V platform and the maturity and CMOS compatibility of silicon photonic circuitry, enabling a wide variety of quantum information applications.

DOI
10.1051/epjconf/202328706009

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Hybrid photonic devices represent a promising solution to the effective on-chip integration of all the components required for the generation, manipulation and detection of non-classical states of light encoding quantum information. We present an AlGaAs source of highly entangled photon pairs envisioned for the hybridization with silicon-on-insulator integrated platforms, in order to take benefit from the strong second order nonlinearity and the compliance with electrical pumping of the III-V platform and the maturity and CMOS compatibility of silicon photonic circuitry, enabling a wide variety of quantum information applications.
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Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are now possible. This review focuses on AlGaAs, a III-V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach-Zehnder interferometers, modulators and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/silicon quantum photonic device combining the strong second-order nonlinearity and direct band gap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al Ga As source and their vertical routing to an adhesively bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband ( > 40 nm) telecom photons by type-0 and type-2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10 5 s − 1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5-nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on chip, within a hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies. Published by the American Physical Society 2024
Integrated photonics is playing a key role in the development of quantum technologies covering applications ranging from quantum communication to computing and from simulations to sensing. In this context, material platforms enabling the chip-scale integration of quantum components are a key issue on the way towards real-world and large-scale technological implementations. In this paper, we review our last achievements on AlGaAs Bragg reflection waveguides emitting nonclassical states of light by spontaneous parametric down conversion. The choice of this platform combines the advantages of a mature fabrication technology, room temperature operation, emission in the telecom C-Band and compliance with electrical injection. We demonstrate the ability of these devices to generate a large variety of quantum states spanning from biphoton frequency combs to broadband polarization entanglement enabling promising applications in quantum processing as well as flexible quantum networks.