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Review of Scientific Instruments

A 1.25-GHz multi-amplitude modulator driver in 0.18 μm SiGe BiCOMOS technology for high speed quantum key distribution

Zhao-Yuan Chen, Chenxi Zhu, Zhi-Sheng Huang, Yang Li, Xinzhe Wang, Futian Liang, Ge Jin, Wenqi Cai, Sheng‐Kai Liao, Cheng-Zhi Peng

Published Oct 1, 2023• 4 citations
Publisher

Abstract

Quantum key distribution (QKD) research has yielded highly fruitful results and is currently undergoing an industrialization transformation. In QKD systems, electro-optic modulators are typically employed to prepare the required quantum states. While various QKD systems operating at GHz repetition frequency have demonstrated exceptional performance, they predominantly rely on instruments or printed circuit boards to fulfill the driving circuit function of the electro-optic modulator. Consequently, these systems tend to be complex with low integration levels. To address this challenge, we have introduced a modulator driver integrated circuit in 0.18 µm SiGe BiCMOS technology. The circuit can generate multiple-level driving signals with a clock frequency of 1.25 GHz and a rising edge of ∼50 ps. Each voltage amplitude can be independently adjusted, ensuring the precise preparation of quantum states. The measured signal-to-noise ratio was more than 17 dB, resulting in a low quantum bit error rate of 0.24% in our polarization-encoding system. This work will contribute to the advancement of QKD system integration and promote the industrialization process in this field.

DOI
10.1063/5.0167218

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Quantum key distribution (QKD) research has yielded highly fruitful results and is currently undergoing an industrialization transformation. In QKD systems, electro-optic modulators are typically employed to prepare the required quantum states. While various QKD systems operating at GHz repetition frequency have demonstrated exceptional performance, they predominantly rely on instruments or printed circuit boards to fulfill the driving circuit function of the electro-optic modulator. Consequently, these systems tend to be complex with low integration levels. To address this challenge, we have introduced a modulator driver integrated circuit in 0.18 µm SiGe BiCMOS technology. The circuit can generate multiple-level driving signals with a clock frequency of 1.25 GHz and a rising edge of ∼50 ps. Each voltage amplitude can be independently adjusted, ensuring the precise preparation of quantum states. The measured signal-to-noise ratio was more than 17 dB, resulting in a low quantum bit error rate of 0.24% in our polarization-encoding system. This work will contribute to the advancement of QKD system integration and promote the industrialization process in this field.
Quantum key distribution (QKD) offers the ability of information theoretic security key exchange. The secure key rate is an important indicator for the practical QKD systems, which determines what kinds of applications can be supported. One most effective way to enhance the secure key rate is to increase the system repetition frequency. Here, we report an implementation of a high-speed DC-coupled modulator driving circuit with a repetition rate of up to 5 GHz. The circuit outputs a multi-amplitude return-to-zero pattern pulse with a maximum amplitude of 7.5 V. The design adapts to the various electro-optic modulators widely employed in QKD systems. The minimum pulse width is measured as 75 ps, with the relative noise level less than 1.5% for all the output amplitudes under random modulation.
Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.
Quantum key distribution (QKD) is nowadays a well-established method for generating secret keys at a distance in an information-theoretically secure way, as the secrecy of QKD relies on the laws of quantum physics and not on computational complexity. In order to industrialize QKD, low-cost, mass-manufactured, and practical QKD setups are required. Hence, photonic and electronic integration of the sender’s and receiver’s respective components is currently in the spotlight. Here we present a high-speed (2.5 GHz) integrated QKD setup featuring a transmitter chip in silicon photonics allowing for high-speed modulation and accurate state preparation, as well as a polarization-independent low-loss receiver chip in aluminum borosilicate glass fabricated by the femtosecond laser micromachining technique. Our system achieves raw bit error rates, quantum bit error rates, and secret key rates equivalent to a much more complex state-of-the-art setup based on discrete components [ Boaron A. et al. , Phys. Rev. Lett. 121 , 190502 ( 2018 ) ].
Quantum key distribution (QKD) is nowadays a well established method for generating secret keys at a distance in an information-theoretic secure way, as the secrecy of QKD relies on the laws of quantum physics and not computational complexity. In order to industrialize QKD, low-cost, mass-manufactured and practical QKD setups are required. Hence, photonic and electronic integration of the sender's and receiver's respective components is currently in the spotlight. Here we present a high-speed (2.5 GHz) integrated QKD setup featuring a transmitter chip in silicon photonics allowing for high-speed modulation and accurate state preparation, as well as a polarization-independent low-loss receiver chip in aluminum borosilicate glass fabricated by the femtosecond laser micromachining technique. Our system achieves raw bit error rates, quantum bit error rates and secret key rates equivalent to a much more complex state-of-the-art setup based on discrete components.
Polarization modulation plays a key role in polarization-encoding quantum key distribution (QKD). Here, we report a new, to the best of our knowledge, polarization modulation scheme based on an inherently stable Sagnac interferometer. The presented scheme is free of polarization mode dispersion and calibration as well as insensitive to environmental influences. Successful experiments at a repetition frequency of 1.25 GHz have been conducted to demonstrate the feasibility and stability of the scheme. The measured average quantum bit-error rate of the four polarization states is as low as 0.27% for 80 consecutive minutes without any adjustment. This high-speed intrinsically stable polarization modulation can be widely applied to many polarization-encoding QKD systems, such as BB84, MDI, etc.
Quantum Key Distribution (QKD) is the most mature method for implementing commercial quantum communications in practice. As part of the miniaturization of practical QKD devices, an integrated electronic system in the 130 nm complementary metal oxide semiconductor process is presented for the QKD sender device. The electronics provide driving signals for the optics at the sender terminal of the quantum channel in QKD and consist mainly of three key modules, namely, a laser diode driver with a high slew rate, a high-speed physical random number generator, and a pre-driver for the electro-optic modulator. The electronic system is designed to operate at frequencies as high as 625-MHz to accommodate the frequency of the QKD system. The high degree of integration is advantageous for miniaturizing QKD sender devices.