Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Review of Scientific Instruments

Integrated electronics in 130 nm CMOS process for quantum key distribution sender device

Xinzhe Wang, Futian Liang, Bo Feng, Chenxi Zhu, Yulong Zhu, Ge Jin

Published Mar 1, 2020• 2 citations
Publisher

Abstract

Quantum Key Distribution (QKD) is the most mature method for implementing commercial quantum communications in practice. As part of the miniaturization of practical QKD devices, an integrated electronic system in the 130 nm complementary metal oxide semiconductor process is presented for the QKD sender device. The electronics provide driving signals for the optics at the sender terminal of the quantum channel in QKD and consist mainly of three key modules, namely, a laser diode driver with a high slew rate, a high-speed physical random number generator, and a pre-driver for the electro-optic modulator. The electronic system is designed to operate at frequencies as high as 625-MHz to accommodate the frequency of the QKD system. The high degree of integration is advantageous for miniaturizing QKD sender devices.

DOI
10.1063/1.5123238

Related papers

A Laser Modulation Driver in 130-nm CMOS Technology for Quantum Key Distribution System

Bo Feng, Futian Liang, Xinzhe Wang +3 more

Laser modulation is a process to modulate the photons to different states in quantum key distribution (QKD) system. A laser modulation driver, which is a pre-driver for the laser modulator, is presented in this paper. The laser modulation driver is implemented in a 130-nm complementary metal oxide semiconductor (CMOS) process. The laser modulation driver can provide a current pulse signal with an adjustable amplitude and an adjustable pulse-width to a distributed power amplifier. The pulse-width of the current signal can be adjusted from 300 ps to 3800 ps, the maximum adjustable amplitude is 14.4 mA, and the data rate can reach 625 Mb/s. According to the test results, the laser modulation driver can meet the requirements of the electro-optic modulator (EOM) in QKD system, and it can be used in the laser modulation circuit in QKD experiments.

International Conference on Integrated Circuits and Microsystems (ICICM)•Oct 1, 2019•1 citation

Chip-Based Electronic System for Quantum Key Distribution

Siyuan Zhang, Wei Mao, Shaobo Luo +1 more

Quantum Key Distribution (QKD) has garnered significant attention due to its unconditional security based on the fundamental principles of quantum mechanics. While QKD has been demonstrated by various groups and commercial QKD products are available, the development of a fully chip-based QKD system, aimed at reducing costs, size, and power consumption, remains a significant technological challenge. Most researchers focus on the optical aspects, leaving the integration of the electronic components largely unexplored. In this paper, we present the design of a fully integrated electrical control chip for QKD applications. The chip, fabricated using 28 nm CMOS technology, comprises five main modules: an ARM processor for digital signal processing, delay cells for timing synchronization, ADC for sampling analog signals from monitors, OPAMP for signal amplification, and DAC for generating the required voltage for phase or intensity modulators. According to the simulations, the minimum delay is 11ps, the open-loop gain of the operational amplifier is 86.2 dB, the sampling rate of the ADC reaches 50 MHz, and the DAC achieves a high rate of 100 MHz. To the best of our knowledge, this marks the first design and evaluation of a fully integrated driver chip for QKD, holding the potential to significantly enhance QKD system performance. Thus, we believe our work could inspire future investigations toward the development of more efficient and reliable QKD systems.

Entropy•Apr 29, 2024•0 citations

A 1.25-GHz multi-amplitude modulator driver in 0.18 μm SiGe BiCOMOS technology for high speed quantum key distribution

Zhao-Yuan Chen, Chenxi Zhu, Zhi-Sheng Huang +7 more

Quantum key distribution (QKD) research has yielded highly fruitful results and is currently undergoing an industrialization transformation. In QKD systems, electro-optic modulators are typically employed to prepare the required quantum states. While various QKD systems operating at GHz repetition frequency have demonstrated exceptional performance, they predominantly rely on instruments or printed circuit boards to fulfill the driving circuit function of the electro-optic modulator. Consequently, these systems tend to be complex with low integration levels. To address this challenge, we have introduced a modulator driver integrated circuit in 0.18 µm SiGe BiCMOS technology. The circuit can generate multiple-level driving signals with a clock frequency of 1.25 GHz and a rising edge of ∼50 ps. Each voltage amplitude can be independently adjusted, ensuring the precise preparation of quantum states. The measured signal-to-noise ratio was more than 17 dB, resulting in a low quantum bit error rate of 0.24% in our polarization-encoding system. This work will contribute to the advancement of QKD system integration and promote the industrialization process in this field.

Review of Scientific Instruments•Oct 1, 2023•4 citations

A laser source driver with adjustable amplitude and pulse-width in 130-nm CMOS technology for quantum key distribution experiments

Bo Feng, Futian Liang, Xinzhe Wang +3 more

We present a laser source driver using a 130-nm complementary metal oxide semiconductor technology, named quantum laser source driver 2018 (QLSD2018). QLSD2018 drives the optical source with a current pulse signal, and the output of QLSD2018 has an adjustable pulse-width from 300 ps to 3.8 ns and an adjustable amplitude up to 70 mA. The data rate is up to 625 Mb/s, and the extinction ratio of the optical source (the 1550-nm distributed feedback laser or the 850-nm vertical-cavity surface-emitting laser) driven by QLSD2018 can reach 26 dB. The test results indicate that QLSD2018 can be used in quantum key distribution experiments. Using QLSD2018 on the transmitter side can significantly simplify the peripheral circuit of the optical source.

Review of Scientific Instruments•Jun 1, 2019•8 citations

Integrated Photonics and Electronics for High‐Speed Quantum Key Distribution

Z. Chen, Xin‐Zhe Wang, Yang Li +10 more

Abstract Quantum key distribution (QKD) has made significant advancements over the past few decades and is gradually transitioning from laboratory to industrial domain. This transformation process poses urgent demands for integrated, cost‐effective, and mass‐producible QKD devices. Here, by interfacing a laser diode, a QKD encoding photonics chip, and their associated electronics driver chips, the QKD transmitter has been condensed from several bulky discrete components to integrated modules with dimensions of a few centimeters, while the modulation rate of the transmitter has been enhanced to 3.33 GHz. Based on this transmitter, QKD is demonstrated over a 100 km standard fiber channel, capable of generating secure keys at a record high key rate of 2.82 Mbps over this distance. This work demonstrates the feasibility of high‐speed integrated QKD transmitters, thereby further propelling the research on QKD in practical applications.

Laser & Photonics Review•Sep 21, 2025•1 citation

A laser source driver in 0.18 μ m SiGe BiCMOS technology for high speed quantum key distribution

Yulong Zhu, Xinzhe Wang, Chenxi Zhu +8 more

Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.

AIP Advances•Dec 1, 2022•7 citations
Quantum Key Distribution (QKD) is the most mature method for implementing commercial quantum communications in practice. As part of the miniaturization of practical QKD devices, an integrated electronic system in the 130 nm complementary metal oxide semiconductor process is presented for the QKD sender device. The electronics provide driving signals for the optics at the sender terminal of the quantum channel in QKD and consist mainly of three key modules, namely, a laser diode driver with a high slew rate, a high-speed physical random number generator, and a pre-driver for the electro-optic modulator. The electronic system is designed to operate at frequencies as high as 625-MHz to accommodate the frequency of the QKD system. The high degree of integration is advantageous for miniaturizing QKD sender devices.
Laser modulation is a process to modulate the photons to different states in quantum key distribution (QKD) system. A laser modulation driver, which is a pre-driver for the laser modulator, is presented in this paper. The laser modulation driver is implemented in a 130-nm complementary metal oxide semiconductor (CMOS) process. The laser modulation driver can provide a current pulse signal with an adjustable amplitude and an adjustable pulse-width to a distributed power amplifier. The pulse-width of the current signal can be adjusted from 300 ps to 3800 ps, the maximum adjustable amplitude is 14.4 mA, and the data rate can reach 625 Mb/s. According to the test results, the laser modulation driver can meet the requirements of the electro-optic modulator (EOM) in QKD system, and it can be used in the laser modulation circuit in QKD experiments.
Quantum Key Distribution (QKD) has garnered significant attention due to its unconditional security based on the fundamental principles of quantum mechanics. While QKD has been demonstrated by various groups and commercial QKD products are available, the development of a fully chip-based QKD system, aimed at reducing costs, size, and power consumption, remains a significant technological challenge. Most researchers focus on the optical aspects, leaving the integration of the electronic components largely unexplored. In this paper, we present the design of a fully integrated electrical control chip for QKD applications. The chip, fabricated using 28 nm CMOS technology, comprises five main modules: an ARM processor for digital signal processing, delay cells for timing synchronization, ADC for sampling analog signals from monitors, OPAMP for signal amplification, and DAC for generating the required voltage for phase or intensity modulators. According to the simulations, the minimum delay is 11ps, the open-loop gain of the operational amplifier is 86.2 dB, the sampling rate of the ADC reaches 50 MHz, and the DAC achieves a high rate of 100 MHz. To the best of our knowledge, this marks the first design and evaluation of a fully integrated driver chip for QKD, holding the potential to significantly enhance QKD system performance. Thus, we believe our work could inspire future investigations toward the development of more efficient and reliable QKD systems.
Quantum key distribution (QKD) research has yielded highly fruitful results and is currently undergoing an industrialization transformation. In QKD systems, electro-optic modulators are typically employed to prepare the required quantum states. While various QKD systems operating at GHz repetition frequency have demonstrated exceptional performance, they predominantly rely on instruments or printed circuit boards to fulfill the driving circuit function of the electro-optic modulator. Consequently, these systems tend to be complex with low integration levels. To address this challenge, we have introduced a modulator driver integrated circuit in 0.18 µm SiGe BiCMOS technology. The circuit can generate multiple-level driving signals with a clock frequency of 1.25 GHz and a rising edge of ∼50 ps. Each voltage amplitude can be independently adjusted, ensuring the precise preparation of quantum states. The measured signal-to-noise ratio was more than 17 dB, resulting in a low quantum bit error rate of 0.24% in our polarization-encoding system. This work will contribute to the advancement of QKD system integration and promote the industrialization process in this field.
We present a laser source driver using a 130-nm complementary metal oxide semiconductor technology, named quantum laser source driver 2018 (QLSD2018). QLSD2018 drives the optical source with a current pulse signal, and the output of QLSD2018 has an adjustable pulse-width from 300 ps to 3.8 ns and an adjustable amplitude up to 70 mA. The data rate is up to 625 Mb/s, and the extinction ratio of the optical source (the 1550-nm distributed feedback laser or the 850-nm vertical-cavity surface-emitting laser) driven by QLSD2018 can reach 26 dB. The test results indicate that QLSD2018 can be used in quantum key distribution experiments. Using QLSD2018 on the transmitter side can significantly simplify the peripheral circuit of the optical source.
Abstract Quantum key distribution (QKD) has made significant advancements over the past few decades and is gradually transitioning from laboratory to industrial domain. This transformation process poses urgent demands for integrated, cost‐effective, and mass‐producible QKD devices. Here, by interfacing a laser diode, a QKD encoding photonics chip, and their associated electronics driver chips, the QKD transmitter has been condensed from several bulky discrete components to integrated modules with dimensions of a few centimeters, while the modulation rate of the transmitter has been enhanced to 3.33 GHz. Based on this transmitter, QKD is demonstrated over a 100 km standard fiber channel, capable of generating secure keys at a record high key rate of 2.82 Mbps over this distance. This work demonstrates the feasibility of high‐speed integrated QKD transmitters, thereby further propelling the research on QKD in practical applications.
Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.