Investigation of modified uni-traveling carrier photodiode for cryogenic microwave photonic links
Carson Moseley, Summer Bolton, Joseph M. Lukens, Yun‐Yi Pai, Michael Chilcote, Benjamin J. Lawrie, Shunqiao Sun, Madison Woodson, Steven B. Estrella, Seongsin M. Kim, Patrick Kung
Quantum devices present the potential for unparalleled computing and communications capabilities; however, the cryogenic temperatures required to successfully control and read out many qubit platforms can prove to be very challenging to scale. Recently, there has emerged an interest in using microwave photonics to deliver control signals down to ultracold stages via optical fiber, thereby reducing thermal load and facilitating dense wavelength multiplexing. Photodetectors can then convert this optical energy to electrical signals for qubit control. The fidelity of the quantum operations of interest therefore depend heavily upon the characteristics of the photodiode, yet experimental demonstrations of fiber-coupled photodetection systems at low temperatures are relatively few in number, leaving important open questions regarding how specific detectors may perform in real-world cryogenic settings. In this work, we examine a highly linear modified uni-traveling carrier photodiode (MUTC-PD) under C-band illumination (1530–1565 nm) at three temperature regimes (300 K, 80 K, and ∼4 K) and multiple bias conditions. Our findings of reduced responsivity but preserved bandwidth are consistent with previous studies, while our saturation tests suggest a variety of potential applications for MUTC-PDs in cryogenic microwave photonics with and without electrical bias. Overall, our results should provide a valuable foundation for the continued and expanding use of this detector technology in quantum information processing.
Quantum devices present the potential for unparalleled computing and communications capabilities; however, the cryogenic temperatures required to successfully control and read out many qubit platforms can prove to be very challenging to scale. Recently, there has emerged an interest in using microwave photonics to deliver control signals down to ultracold stages via optical fiber, thereby reducing thermal load and facilitating dense wavelength multiplexing. Photodetectors can then convert this optical energy to electrical signals for qubit control. The fidelity of the quantum operations of interest therefore depend heavily upon the characteristics of the photodiode, yet experimental demonstrations of fiber-coupled photodetection systems at low temperatures are relatively few in number, leaving important open questions regarding how specific detectors may perform in real-world cryogenic settings. In this work, we examine a highly linear modified uni-traveling carrier photodiode (MUTC-PD) under C-band illumination (1530–1565 nm) at three temperature regimes (300 K, 80 K, and ∼4 K) and multiple bias conditions. Our findings of reduced responsivity but preserved bandwidth are consistent with previous studies, while our saturation tests suggest a variety of potential applications for MUTC-PDs in cryogenic microwave photonics with and without electrical bias. Overall, our results should provide a valuable foundation for the continued and expanding use of this detector technology in quantum information processing.
Quantum devices have the potential to revolutionize applications in computing, communications, and sensing; however, current state-of-art resources must operate at extremely low temperatures, making the routing of microwave control and readout signals challenging to scale. Interest in microwave photonic solutions to this problem has grown in recent years, in which control signals are delivered to the cold stage via optical fiber, where they are converted to electrical signals through photodetection. Overall link performance depends strongly on the characteristics of the photodiode, yet detailed measurements of many detector properties remain lacking at cold temperatures. In this work, we examine and compare the performance of a modified uni-traveling carrier photodiode (MUTC-PD) at both room (300 K) and liquid nitrogen (80 K) temperatures, focusing in particular on responsivity, bandwidth, and linearity. In line with previous work, we find a sharp reduction in responsivity at 1550 nm as temperature decreases, while RF bandwidth remains steady. Interestingly, our linearity tests reveal that the RF output saturates more quickly at 80 K, suggesting reduced linearity with lower temperature, the cause of which is still under investigation. Our results should help contribute to the understanding and future design of highly linear cryogenic quantum links.
We investigate short pulse illumination of a high-speed extended-InGaAs photodiode at cryogenic temperatures toward its use in control and readout of superconducting qubits. First, we demonstrate high detector responsivity at 1550 nm illumination at 20 mK, a wavelength band unavailable to cryogenic standard InGaAs detectors due to the temperature-dependent bandgap shift. Second, we demonstrate an improved signal-to-noise ratio (SNR) at the shot noise limit for cryogenic short optical pulse detection when compared with conventional modulated continuous-wave laser detection. At 40 μA of photocurrent and a detector temperature of 4 K, short pulse detection yields an SNR improvement of 20 dB and 3 dB for phase and amplitude quadratures, respectively. Last, we discuss how short pulse detection offers a path for signal multiplexing, with a demonstration of simultaneous production of microwave pulses at two different carrier frequencies. Together, these advancements establish a path toward low noise and power efficient multiplexed photonic links for quantum computing with a large number of superconducting qubits.
Integrated circuit technology enables the scaling of circuit complexity and functionality while maintaining manufacturability and reliability. Integration is expected to play an important role in quantum information technologies, including in the highly demanding task of producing the classical signals to control and measure quantum circuits at scales needed for fault-tolerant quantum computation. Here, we experimentally characterize the cryogenic performance of a miniaturized photonic integrated circuit fabricated by a commercial foundry that downconverts classical optical signals into microwave signals. The circuit consists of waveguide-integrated germanium PIN photodiodes packaged using a scalable photonic wire bonding approach to a multi-channel optical fiber array that provides the optical excitation. We find the peak optical-to-microwave conversion response to be ∼150 ± 13 mA/W in the O-band at 4.2 K, well below the temperature the circuit was designed for and tested at in the past, for two different diode designs. The second diode design operates to over 6 GHz of 3 dB bandwidth, making it suitable for controlling quantum circuits, with improvements in bandwidth and response expected from improved packaging. The demonstrated miniaturization and integration offers new perspectives for wavelength-division multiplexed control of microwave quantum circuits and scalable processors using light delivered by optical fiber arrays.
Superconducting nanowire single-photon detectors have become indispensable for experiments in quantum optics and photonic quantum information processing. Nevertheless, these detectors require temperatures below 4 K to operate. These devices typically require coaxial cables as electrical connections for biasing and readout. Replacing these electrical connections with optical fibers both isolates the SNSPD from noise in room-temperature control electronics and simultaneously achieves a connection with a low thermal load. Nevertheless, the optoelectronic interfaces required for this purpose must be fully compatible with the cryogenic operating conditions of the detector. Recently, optical readout of an SNSPD using an electro-optic modulator at cryogenic temperatures has been demonstrated [1]–[3]. In addition, we have shown an opto-electronic bias of an SNSPD by generating the bias current using a photodiode co-located on the cold stage of the cryostat [4]. Both methods replace elements of electrical connection for the SNSPD in the cryostat by an optical fiber. Here, we show the combination of the opto-electronic bias and optical read readout in a single device, which enables us to operate an SNSPD fully isolated from room temperature electronics.
Current control techniques for cryogenically cooled qubits are realized with coaxial cables, posing multiple challenges in terms of cost, thermal load, size, and long-term scalability. Emerging approaches to tackle this issue include cryogenic CMOS electronics at 4 K, and photonic links for direct qubit control. In this paper, we propose a multiplexed all-passive cryogenic high frequency direct detection control platform (cryo HFDD). The proposed classical interface for direct qubit control utilizes optical or sub-THz bands. We present the possible tradeoffs of this platform, and compare it with current state of-the-art cryogenic CMOS and conventional coaxial approaches. Weassess the feasibility of adopting these efficient links for a wide range of microwave qubit power levels. Specifically, we estimate the heat load to achieve the required signal-to-noise ratio SNR considering different noise sources, component losses, as well as link density. We show that multiplexed photonic receivers at 4 K can aggressively scale the control of thousands of qubits. This opens the door for low cost scalable quantum computing systems.
Superconducting Nanowire Single Photon Detectors (SNSPDs) have become an integral part of quantum optics in recent years because of their high performance in single photon detection. We present a method to replace the electrical input by supplying the required bias current via the photocurrent of a photodiode situated on the cold stage of the cryostat. Light is guided to the bias photodiode through an optical fiber, which enables a lower thermal conduction and galvanic isolation between room temperature and the cold stage. We show that an off-the-shelf InGaAs–InP photodiode exhibits a responsivity of at least 0.55 A/W at 0.8 K. Using this device to bias an SNSPD, we characterize the count rate dependent on the optical power incident on the photodiode. This configuration of the SNSPD and photodiode shows an expected plateau in the single photon count rate with an optical bias power on the photodiode above 6.8 µW. Furthermore, we compare the same detector under both optical and electrical bias, and show there is no significant changes in performance. This has the advantage of avoiding an electrical input cable, which reduces the latent heat load by a factor of 100 and, in principle, allows for low loss RF current supply at the cold stage.