Heterogeneous Integration of SiV- Centers in Diamond with Lithium Niobate Photonics for Quantum Networks
Hope Lee, Daniel Riedel, Jakob Grzesik, Jason F. Herrmann, Shahriar Aghaeimeibodi, Jean-Michel Borit, Vahid Ansari, Hubert S. Stokowski, Luke Qi, Tae‐Won Park, A. Hwang, Timothy P. McKenna, Patrick J. McQuade, Haiyu Lu, Zhi‐Xun Shen, Amir H. Safavi‐Naeini, Jelena Vuckovic A
We report the high efficiency coupling of diamond waveguides to thin-film lithiumniobate photonics, allowing for the optical addressing and characterization of individual SiV- color centers.
On-chip photonic quantum circuits with integrated quantum memories have the potential to radically advance hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories as they combine long storage times with excellent optical emission properties and an optically addressable spin state. However, as a material, diamond lacks the many functionalities needed to realize scalable quantum systems. Thin-film lithium niobate (TFLN), in contrast, offers a number of useful photonic nonlinearities, including the electro-optic effect, piezoelectricity, and capabilities for periodically poled quasi-phase matching. Here, we present the highly efficient heterogeneous integration of diamond nanobeams containing negatively charged silicon-vacancy (SiV) centers with TFLN waveguides. We observe greater than 90% transmission efficiency between the diamond nanobeam and the TFLN waveguide on average across multiple measurements. By comparing saturation signal levels between confocal and integrated collection, we estimate a more than 10-fold increase in photon emission channeled into TFLN waveguides versus that channeled into out-of-plane collection channels. Our results constitute a key step for creating scalable integrated quantum photonic circuits that leverage the advantages of both diamond and TFLN materials.
Diamond photonics has enabled efficient interfaces for quantum memories and is predicted to be a critical component of quantum networks. However, scalable network architectures require spatial, temporal, and spectral control of photons, which relies on nonlinear and electro-optic functionalities that diamond alone cannot provide. Here, we demonstrate heterogeneous integration of a thin-film lithium niobate (TFLN) platform, which has strong chi-2 nonlinearity and electro-optic effects, with thin diamond films. We demonstrate high-Q diamond photonic crystal cavities (Q factors exceeding 5x10^4 at 735 nm) that are lithographically aligned with TFLN photonic backbone and critically coupled to it. This allows us to realize low-loss diamond-TFLN "escalators" (loss ~1 dB/coupler) that support efficient light transfer between them. At cryogenic temperatures (5K), we can collect photons emitted from silicon vacancies (SiVs) embedded within the diamond structure via the TFLN photonic circuit. This approach establishes a scalable route toward integrated photonic circuits for practical quantum networking and other technologies.
Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that can deterministically achieve near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO2), as well as optical spin control and readout via a TiO2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO2; it can be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.
The realization of quantum networks capable of distributing quantum information over kilometer scale distances is key to maximizing the potential of quantum information technology. Implementing this technology requires both the ability to generate remote entanglement between quantum memory nodes, requiring an efficient spin-photon interface, and the ability to efficiently scale the classical optical control and multiplexing optics within a given node. In this work, we develop integrated photonics platforms in diamond and thin film lithium niobate to address both of these issues. Together, these platforms provide the necessary ingredients to create large scale quantum networking technology. For the quantum network nodes, we extend previous results combining diamond nanophotonic resonators with the silicon-vacancy defect as a quantum networking platform. We demonstrate, for the first time, quantum entanglement between SiV quantum memories across 35km in a deployed fiber network. We also develop additional functionalities within the SiV platform including the incorporation of deterministic strain to increase defect yield and deterministic single photon generation with the SiV. In order to enable the scalable control and multiplexing of individual SiV centers necessary for realizing practical quantum network nodes, we develop a state-of-the-art electro-optics platform operating at visible wavelengths using thin film lithium niobate. We develop an understanding of fabrication induced losses at visible wavelengths in the platform and a variety of key devices in the platform including high-bandwidth, low-drive voltage amplitude and phase modulators, as well as high-efficiency off chip couplers. Utilizing this platform we perform ultra-high efficiency electro-optic frequency shifting, achieving a 15 GHz frequency shift with over 50% efficiency. Finally, using our measured device performance, we discuss and model how these devices can effectively multiplex SiV-based quantum nodes. Thus through these two platforms we have demonstrated the necessary ingredients to realize large-scale quantum network nodes.
Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.