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Optical Fiber Communication Conference

Guard-ring free InGaAs/InP single photon avalanche diodes for C-band quantum communication

Pascal Rustige, Jan Krause, Lorenz Eckoldt, Patrick Runge, Martin A. Schell

Published Jan 1, 2023• 2 citations
Publisher

Abstract

We present a guard-ring free InGaAs/InP single photon avalanche diode with 20 µm diameter for the optical C-band. At 225 K, 25.6 µs dead time and 17% detection efficiency, the dark count rate is 3 kcps with 0.5% afterpulsing probability. This corresponds to a quantum bit error rate of about 1.2% for 625 MHz timebin-phase BB84 QKD over 125 km.

DOI
10.1364/ofc.2023.w3c.4

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 19, 2012•14 citations
We present a guard-ring free InGaAs/InP single photon avalanche diode with 20 µm diameter for the optical C-band. At 225 K, 25.6 µs dead time and 17% detection efficiency, the dark count rate is 3 kcps with 0.5% afterpulsing probability. This corresponds to a quantum bit error rate of about 1.2% for 625 MHz timebin-phase BB84 QKD over 125 km.
The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.
Free-running single photon detectors at telecom wavelengths are attractive for many tasks in quantum optics. However, until recently, the convenient and compact InGaAs/InP avalanche photodiodes did not operate with satisfactory performance in this regime due to high dark count rates and afterpulsing effects. Recent development of negative feedback avalanche diodes (NFADs) enabled very fast passive quenching of the avalanche current, effectively reducing the afterpulse probability and subsequently allowing free-running operation. Here, we present analysis of NFAD operation at low temperatures, down to 163 K, which reveals a significant reduction of the dark count rate. We succeeded in developing a compact single photon detection system with a dark count rate of ~1 cps at 10% detection efficiency. To ensure that the NFAD is in a well-defined initial condition during the characterization of the detection efficiency and afterpulsing, we use a recently developed FPGA based test procedure suitable for free-running detectors. To demonstrate the performance of the detector in a real-world application we integrate it into a 1.25 GHz clocked quantum key distribution system. An optimization of the detector temperature allowed secret key distribution in the presence of more than 30 dB of loss in the quantum channel.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.