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Spectral Hole-Burning and Related Spectroscopies: Science and Applications

Thermally Induced Hole-filling Process In Donor-acceptor Electron Transfer System

Ming Tian, Tiejun Chang, Jiahua Zhang, Baozhu Luo, Shihua Huang, Jiaqi Yu

Published Jan 1, 1994• 0 citations
Publisher

Abstract

Photon-gated spectral hole-burning in the organic donor-acceptor electron transfer system has attracted extensively interests because of its application background in frequency-domain optical storage. Several materials have been investigated from the aspects in hole-burning process[1–3], such as photon-gating effect, temperature dependence of hole width and hole-burning efficiency. A few works on hole-filling processes have been done[4], however, the filling mechanisms are not clear now.

DOI
10.1364/shbs.1994.wd23

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Photochemical Hole Burning (PHB) has attracted considerable interest not only as a tool for high resolution spectroscopy of amorphous solid at low temperature but also as a possible means for freguency-domain high-density optical storage.1) Many recent investigations have been devoted to a photon-gated mechanism because it allows nondestructive readout in utilizing PHB for a practical optical memory system. The mechanisms of previously reported photon-gated PHB systems are two-step photoionization, photodecomposition, and photoinduced donor-acceptor electron transfer reactions.1)
Photochemical hole burning (PHB) is a topic of attracting increasing interest from spectroscopic viewpoints as well as from the practical prospects for ultra-high-density frequency-domain optical storage. Recent advances in PHB study are reviewed mainly focusing on the effects of chemical structure of guest ions and molecules as well as host matrices on the efficiency of hole formation and its temperature dependence, low energy excitation modes and Debye-Waller factors in amorphous matrices, and the mechanism of photon-gated PHB.