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Topical Meeting on Optical Bistability (OB)

Distributed Feedback Bistability in Channel Waveguides

G. I. Stegeman, C. Liao, Herbert G. Winful

Published Jan 1, 1983• 3 citations
Publisher

Abstract

Two current goals in the area of optical bistability are (1) to reduce the power required for switching between two states, and (2) to reduce the material volume (and hence power dissipation). An obvious approach is to minimize the cross-sectional area of the beam, for example by using channel waveguides of the type shown in Fig. 1. A grating milled into the surfaces can be used as the distributed feedback mechanism. In this paper we analyze a channel, guided wave, distributed feedback geometry and present numerical results for InSb waveguides.

DOI
10.1364/obi.1983.thb18

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Two current goals in the area of optical bistability are (1) to reduce the power required for switching between two states, and (2) to reduce the material volume (and hence power dissipation). An obvious approach is to minimize the cross-sectional area of the beam, for example by using channel waveguides of the type shown in Fig. 1. A grating milled into the surfaces can be used as the distributed feedback mechanism. In this paper we analyze a channel, guided wave, distributed feedback geometry and present numerical results for InSb waveguides.
In order to study optical bistability in a non-linear distributed feedback structure (NLDFB), we have generalized previous work. A mono-mode rectangular waveguide is chosen as the basic configuration for the device, although other guides could be considered. The grating, providing the passive feedback mechanism, has a geometry that can be arbitrarily chosen. Linear absorption is taken into account and the non-linearity is taken to be of the Kerr type. The effect of these three perturbations is treated using the Coupled Mode Theory and the Slowly Varying Envelope Approximation, including the radiation modes. Expressions for the coupling constants due to the three fundamental perturbations are derived and we show that new terms arise due to the interplay between the latter. Our model shows that an extra term, causing a shift of the Braggfrequency occurs in the equations. The analytical expressions are integrated numerically with the proper boundary conditions. Overall reflection and transmission properties of the device are displayed as a function of the intensity, the period of the grating, its length and several other device parameters.
We have derived nonlinear coupled mode equations appropriate for periodic channel waveguides. These equations contain the three different nonlinear coefficients which were not taken into account in the previous analysis provided by Stegeman et al.. [IEEE. J. Quantum Electron. 18 (1982) 1610.] It has been shown that such nonlinear coefficients lower the switching power for optical bistability generated in the periodic channel waveguides. Dependence of the switching power on the waveguide size, waveguide structure and the grating parameters has been numerically obtained for ridge polydiacetylene (PDA-C4UC4) waveguides.
We have analyzed four different guided wave approaches to achieving a power dependent refractive index and optical bistability. These include surface plasmons at the interface between a metal and a semiconductor, symmetric surface plasmon modes guided by thin metal films, conventional single film integrated optics waveguides, and multifilm integrated optics. The relative merits of each geometry are discussed for utilizing the large cubic nonlinearities in the semiconductors GaAs and InSb. Both the mode attenuation and the minimum power required for a nonlinear phase shift of pi/2 are evaluated numerically and it is shown that usable propagation distances can be obtained, even for highly lossy media such as GaAs.
We have analyzed four different guided wave approaches to achieving a power dependent refractive index and optical bistability. These include surface plasmons at the interface between a metal and a semiconductor, symmetric surface plasmon modes guided by thin metal films, conventional single film integrated optics waveguides, and multifilm integrated optics. The relative merits of each geometry are discussed for utilizing the large cubic nonlinearities in the semiconductors GaAs and InSb. Both the mode attenuation and the minimum power required for a nonlinear phase shift of\pi/2are evaluated numerically and it is shown that usable propagation distances can be obtained, even for highly lossy media such as GaAs.