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Applied Physics Letters

Comparison of guided wave approaches to optical bistability

G. I. Stegeman

Published Aug 1, 1982• 16 citations
Publisher

Abstract

The minimum power required for a nonlinear phase shift of π/2, and the maximum propagation distance are evaluated for the semiconductors GaAs and InSb in four guided wave geometries: surface plasmons at the interface between two semi-infinite media and guided by a thin metal film, and single and multilayer thin-film optical waveguides. Optimum configurations compatible with guided wave technology are identified.

DOI
10.1063/1.93487

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Journal of the Physical Society of Japan•Mar 15, 1993•1 citation
The minimum power required for a nonlinear phase shift of π/2, and the maximum propagation distance are evaluated for the semiconductors GaAs and InSb in four guided wave geometries: surface plasmons at the interface between two semi-infinite media and guided by a thin metal film, and single and multilayer thin-film optical waveguides. Optimum configurations compatible with guided wave technology are identified.
We have analyzed four different guided wave approaches to achieving a power dependent refractive index and optical bistability. These include surface plasmons at the interface between a metal and a semiconductor, symmetric surface plasmon modes guided by thin metal films, conventional single film integrated optics waveguides, and multifilm integrated optics. The relative merits of each geometry are discussed for utilizing the large cubic nonlinearities in the semiconductors GaAs and InSb. Both the mode attenuation and the minimum power required for a nonlinear phase shift of pi/2 are evaluated numerically and it is shown that usable propagation distances can be obtained, even for highly lossy media such as GaAs.
We have analyzed four different guided wave approaches to achieving a power dependent refractive index and optical bistability. These include surface plasmons at the interface between a metal and a semiconductor, symmetric surface plasmon modes guided by thin metal films, conventional single film integrated optics waveguides, and multifilm integrated optics. The relative merits of each geometry are discussed for utilizing the large cubic nonlinearities in the semiconductors GaAs and InSb. Both the mode attenuation and the minimum power required for a nonlinear phase shift of\pi/2are evaluated numerically and it is shown that usable propagation distances can be obtained, even for highly lossy media such as GaAs.
Most of the intrinsic optical devices which have been studied in recent years consist of a Fabry-Perot resonator containing a nonlinear medium. The response time of such devices is determined by the transients associated with the high-Q resonator and the response time of the nonlinear medium. The fastest devices must be free of any Fabry-Perot cavity. The excitation of either surface plasmons at a nonlinear interface or guided waves in thin nonlinear films is a way to obtain an ultrafast bistable optical device. These two kinds of device have been studied.
In a recent paper1 I formulated a method for calculating propagation through nonlinear media for a number of nonlinear optical phenomena. This method does not use the SVEA and can therefore solve nonlinear propagation problems when refraction and reflection at the boundary interfaces are important. Here, I report the first calculation using this exact (albeit numerical) method. For this first test of the utility of the method, I have chosen to study optical bistability in a thin film whose index of refraction is intensity dependent.
We have numerically investigated optical bistability (OB) in a TaFD9 prism/Ag film/PDA-4BCMU film/air geometry. 4BCMU films are dealt as nonlinear optic films with Kerr nonlinearity. In the geometry of our interest surface plasmon polaritons and guided waves can be excited. Numerical calculations have been carried out for TE- and TM-polarized incident lights. In the case of guided waves the critical power density required for OB is less than 1 W/cm 2 under a certain condition. This is a promising value to realize actual optic devices.