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Nonlinear Dynamics in Optical Systems

High-Frequency Optical Bistability in Semiconductor Optical Amplifiers

D.A.H. Mace, Matthew Adams, W J Devlin

Published Jan 1, 1990• 0 citations
Publisher

Abstract

Fabry-Perot semiconductor laser amplifiers (FPSLA) have potential applications for optical logic, because they display dispersive optical bistability which can be switched with microwatts of optical powers [1]. However, although the optical transition times are fast, the maximum clock frequency at which the bistability will operate is limited by the carrier recombination time. Consequently methods of reducing this time are important for high-speed logic applications [2]. One suggestion to reduce the recombination time is to operate the device at higher carrier densities, provided lasing action can be suppressed, e.g. by the use of a low-reflectivity coating on the facets [3]. In this paper we show experimentally how reducing the recombination time, by low-reflectivity coating the amplifier, increases the maximum clock frequency.

DOI
10.1364/nldos.1990.tdsls83

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Fabry-Perot semiconductor laser amplifiers (FPSLA) have potential applications for optical logic, because they display dispersive optical bistability which can be switched with microwatts of optical powers [1]. However, although the optical transition times are fast, the maximum clock frequency at which the bistability will operate is limited by the carrier recombination time. Consequently methods of reducing this time are important for high-speed logic applications [2]. One suggestion to reduce the recombination time is to operate the device at higher carrier densities, provided lasing action can be suppressed, e.g. by the use of a low-reflectivity coating on the facets [3]. In this paper we show experimentally how reducing the recombination time, by low-reflectivity coating the amplifier, increases the maximum clock frequency.
Optical bistable elements may be attractive in all-optical regenerators as an alternative to electronic regenerators1 provided they are able to handle signals with bit rates in the Gbit/s range. The bistable Fabry-Perot (F.P.) laser amplifier has many desirable properties, e.g., optical gain, room temperature operation,, and low switching energy (fJ).2 Bistability at up to 250 Mbit/s has been predicted for antireflection coated laser amplifiers.1 Here we report measurements of switching times of ~1 ns for a 1.3-μm F.P. laser amplifier, which are verified numerically. For antireflection coated amplifiers, switching times of 230-250 ps, suggesting transmission rates of up to ~2 Gbit/s, are predicted.
We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.
Bistable laser amplifiers are attractive for potential application in optical switching because of very low input optical requirement, high extinction ratio and the presence of optical gain. Optical bistability (OB) arises from gain saturation and the associated nonlinear refraction combined with the effect of feedback in the laser cavity. We present the experimental results of bistable characteristics for the case of a 1.55 /spl mu/m symmetric Fabry-Perot (F-P) laser amplifier with uncoated facets. This paper reports a particularly rich variety of behaviour for reflected signals. Three main forms of hysteresis loops are observed on reflection. The hysteresis loop changes from anticlockwise to clockwise hysteresis in the optical input-output characteristic when the drive current or initial phase detuning is changed. The butterfly hysteresis loop is observed experimentally at optical input power as low as 260 /spl mu/W for a drive current equal to 90% of the lasing threshold. The dependence of the optical bistability on drive current, initial phase detuning and injected optical power has been investigated. In the bistable light output-initial phase detuning characteristic, the optimum frequency is shifted downward with an increase in the injected power or the drive current. All measurements are in good agreement with an analytical model.
A time-dependent theory of optical bistability is developed and applied to laser amplifiers and passive semiconductor etalons. Results of the theory show an output intensity spike in switch-up which occurs after a time delay determined largely by the carrier recombination time, and before which the transition is unstable. Although for passive etalons the spike is rather broad (of order 1 ns for parameters appropriate to GaAs at 0.85 μm or InGaAsP at 1.55 μm) and of low amplitude, for amplifiers it is roughly an order of magnitude narrower and higher in amplitude. As a consequence, it is predicted that clock speeds for semiconductor bistable switching elements will be limited to rates commensurate with the carrier recombination time, not only for switch-down operations (as already well known) but also for switch-up operations.
Dispersive optical bistability in a Fabry-Perot, a distributed feedback (DFB), or a distributed Bragg reflector (DBR), semiconductor laser amplifier has recently attracted much attention, because of its potential in the operation of highly functional optical devices. While the steady-state operation of bistable diode laser amplifiers are well understood, studies of the dynamic properties have been limited to switching time, critical slowing down and output spiking measurements[1-3]. Little attention has been paid to the dynamic frequency chirp which is associated with the turn-on spike at the onset of light injection. Such frequency chirp exists because in dispersive bistability the Fabry-Perot resonance (or the DBR/DFB transmission peak) sweeps through the injected wavelength as a result of alight induced refractive index change. In this paper, we report on a theoretical analysis and the first experimental observation of this dynamic chirp in a Fabry-Perot type nonlinear semiconductor laser amplifier. It is found that the magnitude of the chirp depends on the input power, which in turn is related to critical slowing down.