Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

PRX Quantum

Remarkable Prospect for Quantum-Dot-Coupled Tin Qubits in Silicon

Wayne M. Witzel, Jesse J. Lutz, Dwight R. Luhman

Published Nov 18, 2022• 3 citations
Publisher

Abstract

Isoelectronic defects, specifically Sn with a spin-\textonehalf{} nucleus, are proposed as the quantum bits in a quantum processor, with internuclear operations mediated by smoothly shuttling electrons from one qubit to another.
DOI
10.1103/prxquantum.3.040320

Related papers

The remarkable prospect for quantum-dot-coupled tin qubits in silicon

Wayne M. Witzel, Jesse J. Lutz, Dwight Luhman

Spin-$\frac{1}{2}$ $^{119}$Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from one Sn atom to another to propagate quantum information via a hyperfine interaction that we predict, from all-electron linearized augmented plane wave density functional theory calculations, to be roughly ten times larger than intrinsic $^{29}$Si. A hyperfine-induced electro-nuclear controlled-phase (e-n-CPhase) gate operation, generated (up to local rotations) by merely holding an electron at a sweet-spot of maximum hyperfine strength for a specific duration of time, is predicted to be exceptionally resilient to charge/voltage noise. Diabatic spin flips are suppressed with a modest magnetic field ($>15~$mT for $<10^{-6}$ flip probabilities) and nuclear spin bath noise may be avoided via isotopic enrichment or mitigated using dynamical decoupling or through monitoring and compensation. Combined with magnetic resonance control, this operation enables universal quantum computation.

arXiv:2206.06285•Jun 13, 2022•0 citations

A modular quantum processor made using phosphorus atoms in silicon

A high-performance silicon-based quantum processor has been developed in which the spins of nine phosphorus nuclei — divided into two groups, or registers — and two shared electrons act as quantum bits (qubits). The modular design of this 11-qubit processor opens the door to a scalable approach to building large, reliable quantum-computing processors. An 11-qubit processor, comprising a 4-nucleus and a 5-nucleus register, coupled by 2 electrons, is a milestone in quantum computing.

Nature•Dec 17, 2025•0 citations

Tin as a nuclear spin qubit in silicon.

Wayne M. Witzel, Dwight Luhman, Jesse J. Lutz +7 more

•Aug 1, 2022•0 citations

Spin Qubit Leapfrogging: Dynamics of shuttling electrons on top of another

Nicklas Meineke, Guido Burkard

Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different materials platforms, the question of how to handle areas of low valley splitting in silicon during shuttling remains unresolved. In this work, we explore the possibility of utilizing the valley degree of freedom, particularly in regions of low valley splitting, to allow mobile spin qubits to be shuttled through an occupied stationary quantum dot, thereby leapfrogging over the stationary electron. This not only grants a more enriched mobility for shuttled electrons, as it opens new possible routing paths, but also enables the implementation of an entangling SWAP$^γ$ two-qubit gate operation in the process. Simulating this process for different sets of parameters, we demonstrate the feasibility of such an operation and offer a unique use case for otherwise precarious regions of a quantum processor chip and propose a possible extension to the set of possible operations for silicon spin qubit devices.

cond-mat.mes-hallCross-listedarXiv:2604.13760•Apr 16, 2026

Tin Qubits Give Diamond a New Shine

Evangelia Takou, Sophia E. Economou

devices based on tin-vacancy qubits in diamond show promise as building blocks of quantum repeaters, an important step toward the realization of long-range quantum networks.

Physics•Jul 26, 2021•0 citations

Smooth velocity shuttling for suppressing valley excitations in disordered Si/SiGe quantum dots

Ryo Nagai, Takashi Takemoto, Hiroyuki Mizuno

Coherent electron shuttling is a key requirement for realizing scalable silicon quantum computing architectures. However, in silicon qubits, the existence of nearly degenerate conduction-band valleys poses a significant challenge because non-adiabatic transitions to excited valley states cause spin dephasing via spin-valley mixing. In this paper, we propose a smooth velocity shuttling protocol to suppress these valley excitations. By mapping the time-domain design of the shuttling velocity profile onto the design problem of window functions in signal processing, we establish an analytical and intuitive design guideline that does not require computationally expensive numerical optimization. We demonstrate that the high-frequency sidelobes of the shuttling velocity spectrum can be effectively suppressed by applying a frequency-modulated gate voltage based on the Tukey window. Through statistical numerical simulations incorporating realistic spatial randomness of the valley landscape, we show that the proposed smooth velocity control significantly reduces the average spin infidelity in the moderate-to-low disorder regime ($|Δ_0|/σ_Δ\simeq \mathcal{O}(1)$). Our results underscore that this simple, control-level velocity shaping provides a robust pathway toward high-fidelity spin transport in large-scale silicon quantum processors.

quant-pharXiv:2606.01541•Jun 2, 2026
Spin-12\frac{1}{2}21​ 119^{119}119Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from one Sn atom to another to propagate quantum information via a hyperfine interaction that we predict, from all-electron linearized augmented plane wave density functional theory calculations, to be roughly ten times larger than intrinsic 29^{29}29Si. A hyperfine-induced electro-nuclear controlled-phase (e-n-CPhase) gate operation, generated (up to local rotations) by merely holding an electron at a sweet-spot of maximum hyperfine strength for a specific duration of time, is predicted to be exceptionally resilient to charge/voltage noise. Diabatic spin flips are suppressed with a modest magnetic field (>15 >15~>15 mT for <10−6<10^{-6}<10−6 flip probabilities) and nuclear spin bath noise may be avoided via isotopic enrichment or mitigated using dynamical decoupling or through monitoring and compensation. Combined with magnetic resonance control, this operation enables universal quantum computation.
Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different materials platforms, the question of how to handle areas of low valley splitting in silicon during shuttling remains unresolved. In this work, we explore the possibility of utilizing the valley degree of freedom, particularly in regions of low valley splitting, to allow mobile spin qubits to be shuttled through an occupied stationary quantum dot, thereby leapfrogging over the stationary electron. This not only grants a more enriched mobility for shuttled electrons, as it opens new possible routing paths, but also enables the implementation of an entangling SWAPγ^γγ two-qubit gate operation in the process. Simulating this process for different sets of parameters, we demonstrate the feasibility of such an operation and offer a unique use case for otherwise precarious regions of a quantum processor chip and propose a possible extension to the set of possible operations for silicon spin qubit devices.
Coherent electron shuttling is a key requirement for realizing scalable silicon quantum computing architectures. However, in silicon qubits, the existence of nearly degenerate conduction-band valleys poses a significant challenge because non-adiabatic transitions to excited valley states cause spin dephasing via spin-valley mixing. In this paper, we propose a smooth velocity shuttling protocol to suppress these valley excitations. By mapping the time-domain design of the shuttling velocity profile onto the design problem of window functions in signal processing, we establish an analytical and intuitive design guideline that does not require computationally expensive numerical optimization. We demonstrate that the high-frequency sidelobes of the shuttling velocity spectrum can be effectively suppressed by applying a frequency-modulated gate voltage based on the Tukey window. Through statistical numerical simulations incorporating realistic spatial randomness of the valley landscape, we show that the proposed smooth velocity control significantly reduces the average spin infidelity in the moderate-to-low disorder regime (∣Δ0∣/σΔ≃O(1)|Δ_0|/σ_Δ\simeq \mathcal{O}(1)∣Δ0​∣/σΔ​≃O(1)). Our results underscore that this simple, control-level velocity shaping provides a robust pathway toward high-fidelity spin transport in large-scale silicon quantum processors.