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Superconductor Science and Technology

Comparing the performance of 850 GHz integrated bias-tee superconductor-insulator-superconductor (SIS) mixers with single- and parallel-junction tuner

Boon-Kok Tan, Kirill I. Rudakov, V. P. Koshelets, Andrey V. Khudchenko, Andrey M. Baryshev, G. Yassin

Published Nov 7, 2022• 3 citations
Publisher

Abstract

Abstract We present and compare the design and performance of two 850 GHz radial probe fed superconductor-insulator-superconductor mixers, where the antenna is aligned perpendicular to the E-Plane of the input full-height rectangular waveguide connected to a multiple flare-angles smooth-walled horn. Both designs are comprised of 0.5 µm2 hybrid niobium/aluminium-nitride/niobium-nitride tunnel junction, fabricated on top of a niobium titanium nitride ground plane with an Al wiring layer. The entire superconducting circuit is supported with a 40 µm thick quartz substrate. The major difference between the two designs is the method used to cancel out the parasitic junction capacitance for broadband performance. The first design utilises two identical junctions connected in parallel with a short transmission line to convert the capacitance of one junction into the equivalent inductance of the other junction, commonly known as the twin-junction tuning scheme; whilst the second design employs an end-loaded scheme with only one tunnel junction. We found that both methods offer similar radio frequency performances, with close to 2× the double sideband quantum noise temperature, but the twin-junction design is more resilient to fabrication tolerances. However, the end-loaded design offers a much better intermediate frequency (IF) bandwidth performance, made possible by the sub-micron and high current density tunnel junction technology. The improved IF performance is important for many millimetre (mm) and sub-mm observatories, such as future upgrades of Atacama Large Millimetre/sub-mm Array receivers, as well as forthcoming space-borne far-infrared missions. Therefore, we conclude that the single-junction mixer design is the preferred option for THz applications, as long as the fabrication error can be minimised within a certain limit.

DOI
10.1088/1361-6668/ac9d6e

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The authors present two different designs of integrated tuning elements for superconducting tunnel junction mixers. The structures consist of a self-complementary log-periodic antenna, superconductor-insulator-superconductor (SIS) tunnel junction, and a broadband superconducting tuning circuit placed between the center of the antenna and the SIS junction. The designs allow good coupling to relatively large-area (7 mu m/sup 2/) junctions. The best design has a 3-dB bandwidth of 102 GHz at the central frequency of 98 GHz, and 75 GHz at the central frequency of 492 GHz. Microwave scale-model measurements show excellent agreement with simulation results. Devices are being fabricated in niobium technology.>

IEEE MTT-S International Microwave Symposium digest•Jan 2, 2003•11 citations
Abstract We present and compare the design and performance of two 850 GHz radial probe fed superconductor-insulator-superconductor mixers, where the antenna is aligned perpendicular to the E-Plane of the input full-height rectangular waveguide connected to a multiple flare-angles smooth-walled horn. Both designs are comprised of 0.5 µm2 hybrid niobium/aluminium-nitride/niobium-nitride tunnel junction, fabricated on top of a niobium titanium nitride ground plane with an Al wiring layer. The entire superconducting circuit is supported with a 40 µm thick quartz substrate. The major difference between the two designs is the method used to cancel out the parasitic junction capacitance for broadband performance. The first design utilises two identical junctions connected in parallel with a short transmission line to convert the capacitance of one junction into the equivalent inductance of the other junction, commonly known as the twin-junction tuning scheme; whilst the second design employs an end-loaded scheme with only one tunnel junction. We found that both methods offer similar radio frequency performances, with close to 2× the double sideband quantum noise temperature, but the twin-junction design is more resilient to fabrication tolerances. However, the end-loaded design offers a much better intermediate frequency (IF) bandwidth performance, made possible by the sub-micron and high current density tunnel junction technology. The improved IF performance is important for many millimetre (mm) and sub-mm observatories, such as future upgrades of Atacama Large Millimetre/sub-mm Array receivers, as well as forthcoming space-borne far-infrared missions. Therefore, we conclude that the single-junction mixer design is the preferred option for THz applications, as long as the fabrication error can be minimised within a certain limit.
We compare the design of two 0.85 THz SIS mixers fed with a radial probe antenna aligned to the E-Plane of the input full-height rectangular waveguide connected to a drilled smooth-walled horn. Both designs employ the same 0.5 µm2 hybrid Nb/AlN/NbN tunnel junction technology, sandwiched between a NbTiN ground and aluminium wiring layer fabricated on top of a 40 µm quartz substrate. The two designs is differed by how we tune out the unwanted junction capacitance for broadband performance. The first design uses the commonly-used twin-junction tuning scheme; whilst the second design utilises an end-loaded scheme. We successfully achieve close to 2× the double sideband quantum noise performance for both schemes, but the twin-junction design is less sensitive to fabrication accuracy of planar circuit components utilised. However, the end-loaded design offers a much better IF bandwidth performance, almost twice wider than the twin-junction design. The need for an ultra-wide IF bandwidth mixer is becoming more pressing and important for the future and up-coming upgrades of various millimetre (mm) and sub-mm astronomical instruments, hence we conclude that the end-loaded design is a better solution for the THz heterodyne mixing applications.
Two years ago, we have fabricated and tested superconductor-insulator-superconductor (SIS) mixers based on Nb/AlN/NbN twin tunnel junctions for waveguide receiver operating in frequency range of 790 - 950 GHz, which demonstrated noise temperature from 250 K at low frequencies to 500 K at the high end of the band. Due to high current density of the junctions (up to 30 kA/cm2 ), a wideband design was realized. Based on result for twin junction, a new mixer design with single SIS junction was proposed and produced. The single junction design is expected to have narrower frequency range than twin-based one, but still wide enough, and provide better coupling in the middle of the band. In addition, the critical current suppression will be much better, than for twin junction, which has an intrinsic problem of difference between areas of individual junctions. The SIS junction in new design is made by Nb/AlN/NbN technology and incorporated in a microstrip line consisting of a 300 nm thick bottom electrode (ground plane) made of NbTiN and a 500 nm thick top electrode made of Al. The top Al electrode is passivated by the SiO2 layer for protection. The DC tects of the fabricated wafer shows, that optimization of the technology allowed to realize gap voltage of 3.2 mV even for junctions of 0.5 square micron area fabricated on the NbTiN bottom layer. The FTS and noise temperature measurement of new mixers will be done in the nearest future and will be presented in comparison with the twin junction design results at the conference.
In this paper, we report on the design and experimental results of a fix-tuned Superconductor-Insulator-Superconductor (SIS) mixer for Atacama Large Millimeter/submillimeter Array (ALMA) band 8 (385-500 GHz) receivers. Nb-based SIS junctions of a current density of 10 kA/cm/sup 2/ and one micrometer size (fabricated with a two-step lift-off process) are employed to accomplish the ALMA receiver specification, which requires wide frequency coverage as well as low noise temperature. Parallel-connected twin junctions (PCTJ) are designed to resonate at the band center to tune out the junction geometric capacitance. A waveguide-microstrip probe is optimized to have nearly frequency-independent impedance at the probe's feed point, thereby making it much easier to match the low-impedance PCTJ over a wide frequency band. In addition, a superconducting magnet fixed onto the compact mixer block to provide efficient magnetic field coupling is designed. The SIS mixer demonstrates a minimum double-sideband receiver noise temperature of 108 K at the band center and temperatures of less than 167 K over the whole band (for an intermediate-frequency range of 4-8 GHz).
We report on the design and experimental results of a fix-tuned Superconductor-Insulator-Superconductor (SIS) mixer for Atacama Large Millimeter/submillimeter Array (ALMA) band 8 (385-500 GHz) receivers. Nb-based SIS junctions of a current density of 10 kA/cm(2) and one micrometer size (fabricated with a two-step lift-off process) are employed to accomplish the ALMA receiver specification, which requires wide frequency coverage as well as low noise temperature. A parallel-connected twin-junction (PCTJ) is designed to resonate at the band center to tune out the junction geometric capacitance. A waveguide-microstrip probe is optimized to have nearly frequency-independent impedance at the probe's feed point, thereby making it easy to match the low-impedance PCTJ over a wide frequency band. The RF embedding impedance is retrieved by fitting the measured pumped I-V curves to confirm good matching between PCTJ and signal source. We demonstrate here a minimum double-sideband receiver noise temperature of 3 times of quantum limits for an intermediate-frequency range of 4-8 GHz. The mixers were measured in band 8 cartridge with a sideband separation scheme. Single-sideband receiver noise below ALMA specification was achieved over the whole band.
This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.
The authors present two different designs of integrated tuning elements for superconducting tunnel junction mixers. The structures consist of a self-complementary log-periodic antenna, superconductor-insulator-superconductor (SIS) tunnel junction, and a broadband superconducting tuning circuit placed between the center of the antenna and the SIS junction. The designs allow good coupling to relatively large-area (7 mu m/sup 2/) junctions. The best design has a 3-dB bandwidth of 102 GHz at the central frequency of 98 GHz, and 75 GHz at the central frequency of 492 GHz. Microwave scale-model measurements show excellent agreement with simulation results. Devices are being fabricated in niobium technology.>