µmSpin-orbit effects in silicon have long been considered of minor importance for the operation of spin qubits.Contrary to this belief, recent and growing amounts of evidence in systems like spin 1/2 and atomic-precision devices seem to indicate otherwise, but the exact mechanisms and implications are not well understood.In this work, we use a metal-oxide-semiconductor and poly-Si (metal-free) double quantum dot singlet-triplet qubit as a sensitive probe of the spin-orbit effect.We first show that a strong magnetic field enables rotations between the singlet S and unpolarized triplet T 0 , an effect which amounts to an effective g-factor difference between the two quantum dots and is affected by gate voltages.Twoaxis control and single shot readout of the qubit is used to study AC resonant control in the deep detuning regime and achieve few microsecond Rabi flip times.Perhaps surprisingly, singlet-triplet qubits "just turn" without engineering feats.Secondly, we investigate a different effect of the spin-orbit interaction on the S-T -transition and its impact on schemes like dynamic nuclear polarization.Our results shed light on the implications of spin-orbit interaction for the operation of spin qubits in silicon.
µmSpin-orbit effects in silicon have long been considered of minor importance for the operation of spin qubits.Contrary to this belief, recent and growing amounts of evidence in systems like spin 1/2 and atomic-precision devices seem to indicate otherwise, but the exact mechanisms and implications are not well understood.In this work, we use a metal-oxide-semiconductor and poly-Si (metal-free) double quantum dot singlet-triplet qubit as a sensitive probe of the spin-orbit effect.We first show that a strong magnetic field enables rotations between the singlet S and unpolarized triplet T 0 , an effect which amounts to an effective g-factor difference between the two quantum dots and is affected by gate voltages.Twoaxis control and single shot readout of the qubit is used to study AC resonant control in the deep detuning regime and achieve few microsecond Rabi flip times.Perhaps surprisingly, singlet-triplet qubits "just turn" without engineering feats.Secondly, we investigate a different effect of the spin-orbit interaction on the S-T -transition and its impact on schemes like dynamic nuclear polarization.Our results shed light on the implications of spin-orbit interaction for the operation of spin qubits in silicon.
The spin-orbit interaction permits to control the state of a spin qubit via electric fields. For holes it is particularly strong, allowing for fast all electrical qubit manipulation, and yet an in-depth understanding of this interaction in hole systems is missing. Here we investigate, experimentally and theoretically, the effect of the cubic Rashba spin-orbit interaction on the mixing of the spin states by studying singlet-triplet oscillations in a planar Ge hole double quantum dot. Landau-Zener sweeps at different magnetic field directions allow us to disentangle the effects of the spin-orbit induced spin-flip term from those caused by strongly site-dependent and anisotropic quantum dot g tensors. Our work, therefore, provides new insights into the hole spin-orbit interaction, necessary for optimizing future qubit experiments.
We characterize numerically and analytically the signatures of the spin-orbit interaction in a two-electron GaAs double quantum dot in the presence of an external magnetic field. In particular, we obtain the return probability of the singlet state by simulating Landau-Zener voltage detuning sweeps which traverse the singlet-triplet ($S\ensuremath{-}{T}_{+}$) resonance. Our results indicate that non-spin-conserving interdot tunneling processes arising from the spin-orbit interaction have well defined signatures. These allow direct access to the spin-orbit interaction scales and are characterized by a frequency shift and Fourier amplitude modulation of the Rabi flopping dynamics of the singlet-triplet qubits $S\ensuremath{-}{T}_{0}$ and $S\ensuremath{-}{T}_{+}$. By applying the Bloch-Feshbach projection formalism, we demonstrate analytically that the aforementioned effects originate from the interplay between spin-orbit interaction and processes driven by the hyperfine interaction between the electron spins and those of the GaAs nuclei.
Since the development of microsized devices is moving forward at enormous speed, there is huge amount of new industrial opportunities. However such devices also require high precision and understanding of the operating of their constituent parts up to the quantum level. The device of the purely quantum nature being developed so far is quantum computer. However the physical realization of it is still not performed, as the requirements for it are very rigorous. \n \nIn the pioneering work by Loss and DiVincenzo it was suggested to use a spin of electron placed in a quantum dot as an information qubit. Following this work the study of electron or hole spin qubits developed. Both experimental and theoretical tools for studying them greatly advanced. \n \nIn the first part of the thesis we study the phonon-induced decoherence and relaxation of singlet-triplet qubits in the double quantum dots. First of all we consider AlGaAs/GaAs double quantum dots. The important result we present here is the strong dephasing that occurs at large detuning. This dephasing is due to two-phonon process that affects mainly singlet state of the qubit and consequently changes the splitting between singlet and triplet leading to dephasing. Remarkably at small detuning this dephasing process is suppressed and the decoherence time is by orders of magnitude longer than in case of large detuning and is mainly defined by one-phonon process. We also present the dependence of relaxation time and decoherence time on the strength of spin-orbit interaction and different directions of the system. Our results provide a deeper insight into the recently obtained experimental data. \n \nWe also studied Si/SiGe quantum dots as a potential candidate for a qubit. Apart from the absence of hyperfine interaction and bulk spin-orbit interaction in the isotopically purified 28Si, its electron-phonon interaction is different from GaAs that also leads to longer qubit lifetimes. We study S-T− qubit near the anticrossing of the basis states. This particular region is interesting due to possibilities in operating the qubit. We show that the type of singlet plays a crucial role, i.e. whether it is a singlet with each dot singly occupied or a singlet with only one dot doubly occupied. Depending on the type of singlet the qubit lifetimes change by several orders of magnitude. We also study the influence of a micromagnet, usually used in experiments to operate the qubit, on the relaxation time and decoherence time and present the regime where its effect is negligible. We suggest how to test experimentally our theory of one-phonon and two-phonon processes separately. We also show how the relaxation and decoherence time depend on different system parameters for S-T0 qubits. \n \nThe second part of the thesis is devoted to the other important constituent part of microsized devices, namely nanowires. We are interested in the dynamic of polarization of localized spins in the nanowires, as it can affect such important device characteristics as e.g. conductance. \n \nWe studied Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction-induced polarization in the nanowire in case when the voltage is applied to it. It was already proposed theoretically that in the ground state the localized spins in 1D systems align in a helix due to RKKY interaction. This polarization is still present until some critical temperature. The presence of such polarization acts as a spin filter for electrons, that most likely affects the conductance of the nanowire. Therefore we studied how this helical polarization changes when the voltage is applied. The key result is the appearance of the uniform polarization perpendicular to the helix plane, that occurs due to backscattering of electrons that is accompanied by flip-flop process with localized spins. When this uniform polarization is formed, the helix starts to rotate as a whole around the direction of the uniform polarization. We present the dependence of polarization of the localized spins on temperature and voltage. Remarkably the uniform polarization grows both with voltage and temperature in the given range of parameters. \n \nWe also considered the electron-induced relaxation of the nuclear spins. As the electron spins and nuclear spins interact via hyperfine interaction, the nuclear relaxation time reflects some properties of electron bath. Namely, we see a strong dependence of nuclear relaxation time on spin-orbit interaction strength. We present here the dependence of the nuclear relaxation time on the external magnetic field and chemical potential of the wire, that can be experimentally varied via gate. The dependences for the strong spin-orbit interaction and for the weak one are substantially different. Moreover, they have distinct peaks, that allow to get the value of spin-orbit interaction amplitude with the high precision.
Electron spins confined in semiconductor quantum dots are emerging as a promising system to study quantum information science and to perform sensitive metrology. Their weak interaction with the environment leads to long coherence times and robust storage for quantum information, and the intrinsic tunability of semiconductors allows for controllable operations, initialization, and readout of their quantum state. These spin qubits are also promising candidates for the building block for a scalable quantum information processor due to their prospects for scalability and miniaturization. owever, several obstacles limit the performance of quantum information experiments in these systems. For example, the weak coupling to the environment makes inter-qubit operations challenging, and a fluctuating nuclear magnetic field limits the performance of single-qubit operations.\n\n\n\nThe focus of this thesis will be several experiments which address some of the outstanding problems in semiconductor spin qubits, in particular, singlet-triplet (S-T0) qubits. We use these qubits to probe both the electric field and magnetic field noise that limit the performance of these qubits. The magnetic noise bath is probed with high bandwidth and precision using novel techniques borrowed from the field of Hamiltonian learning, which are effective due to the rapid control and readout available in S-T0 qubits. These findings allow us to effectively undo the undesired effects of the fluctuating nuclear magnetic field by tracking them in real-time, and we demonstrate a 30-fold improvement in the coherence time T2*.\n\n\n\nWe probe the voltage noise environment of the qubit using coherent qubit oscillations, which is partially enabled by control of the nuclear magnetic field. We find that the voltage noise bath is frequency- dependent, even at frequencies as high as 1MHz, and it shows surprising and, as of yet, unexplained temperature dependence. We leverage this knowledge of the voltage noise environment, the nuclear magnetic field control, as well as new techniques for calibrated measurement of the density matrix in a singlet-triplet qubit to entangle two adjacent single-triplet qubits. We fully characterize the generated entangled states and prove that they are, indeed, entangled.\n\n\n\nThis work opens new opportunities to use qubits as sensors for improved metrological capabilities, as well as for improved quantum information processing. The singlet-triplet qubit is unique in that it can be used to probe two fundamentally different noise baths, which are important for a large variety of solid state qubits. More specifically, this work establishes the singlet-triplet qubit as a viable candidate for the building block of a scalable quantum information processor.
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for electron spin qubit performance, as intravalley and intervalley SOC can significantly perturb the operation of electron spin qubits. While these interactions can be harnessed to drive coherent rotations in a singlet-triplet qubit, coupling to low-lying excited valley states can lead to undesirable spin relaxation when valley splitting is on resonance with the Zeeman energy. In this work, we measure the angular dependence of the interfacial spin-orbit interaction as a function of the direction and magnitude of an applied external magnetic field in SiMOS and Si/SiGe heterostructures, two common material platforms for silicon spin qubits. We construct a physical model that accurately infers intra- and inter-valley SOC physics from fits to the data, allowing for a direct comparison between these two material systems. For the devices measured we find that, while the g-factor differences are comparable, the SiMOS QDs exhibit an order of magnitude larger spin-valley coupling than for Si/SiGe. Moreover, we find that the angular dependence of the spin-valley coupling is similar for both devices, with similar magnetic field orientations minimizing the spin-valley coupling. Our work points towards operational schemes for optimizing spin-valley coupling to avoid or exploit this mechanism for qubit operation.
We theoretically study the interplay of spin-orbit and hyperfine interactions in dynamical nuclear polarization in two-electron semiconductor double quantum dots near the singlet-triplet ($S\ensuremath{-}{T}_{+}$) anticrossing. The goal of the scheme under study is to extend the singlet-triplet ($S\ensuremath{-}{T}_{0}$) qubit decoherence time T2∗ by dynamically transferring the polarization from the electron spins to the nuclear spins. This polarization transfer is achieved by cycling the electron spins over the $S\ensuremath{-}{T}_{+}$ anticrossing. Here, we investigate, both quantitatively and qualitatively, how this hyperfine-mediated dynamical polarization transfer is influenced by the Rashba and Dresselhaus spin-orbit interaction. In addition to T2∗, we determine the singlet return probability Ps, a quantity that can be measured in experiments. Our results suggest that the spin-orbit interaction establishes a mechanism that can polarize the nuclear spins in the direction opposite to that of hyperfine-mediated nuclear spin polarization. In materials with relatively strong spin-orbit coupling, this interplay of spin-orbit and hyperfine-mediated nuclear spin polarizations prevents any notable increase in the $S\ensuremath{-}{T}_{0}$ qubit decoherence time T2∗.