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Physical Review A

Strong tunable phonon-phonon interactions induced by silicon-vacancy centers in one-dimensional chiral phononic waveguides

Cai‐Peng Shen, Xing‐Liang Dong, Jia‐Qiang Chen, Xin‐Lei Hei, Yi‐Fan Qiao, Bolong Wang, Fuli Li

Published Aug 30, 2022• 4 citations
Publisher

Abstract

In solid quantum systems, strong phonon-phonon repulsive or attractive interactions are difficult to achieve. The highly adjustable phonon-phonon interactions created by silicon-vacancy (SiV) centers in a one-dimensional chiral phononic waveguide are investigated in this paper. Under specific situations, phonon-phonon attractive or repulsive interactions between the chiral transport phonons are created when they are scattered by two-level or three-level structural SiV centers. Furthermore, by modulating the laser Rabi frequencies and detunings, the resultant attractive or repulsive interactions between phonons can be adjusted over a large frequency range. Single-phonon creation and phonon manipulation in solid acoustic quantum information processing could benefit from the tunable phonon-phonon interactions.

DOI
10.1103/physreva.106.023717

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In solid quantum systems, strong phonon-phonon repulsive or attractive interactions are difficult to achieve. The highly adjustable phonon-phonon interactions created by silicon-vacancy (SiV) centers in a one-dimensional chiral phononic waveguide are investigated in this paper. Under specific situations, phonon-phonon attractive or repulsive interactions between the chiral transport phonons are created when they are scattered by two-level or three-level structural SiV centers. Furthermore, by modulating the laser Rabi frequencies and detunings, the resultant attractive or repulsive interactions between phonons can be adjusted over a large frequency range. Single-phonon creation and phonon manipulation in solid acoustic quantum information processing could benefit from the tunable phonon-phonon interactions.
Multiparticle entanglement is of great significance for quantum metrology and quantum information processing. We present here an efficient scheme for generating stable multiparticle entanglement in a solid-state setup, where an array of silicon-vacancy centers are embedded in a quasi-one-dimensional acoustic diamond waveguide. In this scheme, the continuum of phonon modes induces a controllable dissipative coupling among the SiV centers. We show that, by an appropriate choice of the distance between the SiV centers, the dipole-dipole interactions can be switched off due to destructive interference, thus realizing a Dicke superradiance model. This gives rise to an entangled steady state of SiV centers with high fidelities. The protocol provides a feasible setup for the generation of multiparticle entanglement in a solid-state system.
Realization of physical systems for quantum information processing fundamentally rests on the ability to generate entanglement among many quantum bits. To this end, solid state quantum systems are often considered a scalable approach due to the relative ease of generating of a large number of individual qubits. However, realizing strong coherent interactions that dominate decoherence processes in the solid state environment is a formidable challenge that has continued to motivate the investigation of new physical systems to store quantum information and new mechanisms to achieve controllable interactions. This thesis takes steps in these directions with diamond color centers, which can store optically accessible quantum information in their electronic spin. We study color center spins as acoustic two level systems, and consider whether their interaction with single phonons in diamond can be engineered to be coherent. Through spectroscopy of color centers in diamond nanomechanical devices and follow-up theoretical work, we identify the negatively charged silicon vacancy (SiV) color center as a promising candidate for phonon-mediated quantum information processing. In the process, an electromechanical device platform capable of tuning the strain environment of color centers is developed. It is used to mitigate thermal decoherence of the SiV spin and demonstrate photon-mediated quantum interference between two SiV centers on a diamond chip, highlighting the utility of nanomechanical devices for photonic quantum networks. Finally, we present high quality factor, wavelength scale acoustic resonators in diamond using phononic crystals towards a coherent interface between SiV centers and single phonons.
Vacancy centers in diamond have proven to be a viable solid-state platform for quantum-coherent optoelectronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an inversion-symmetric system that is less susceptible to electron-phonon interactions. Nevertheless, phonon-mediated processes still degrade the coherent properties of SiV centers; however, characterizing their electron-phonon coupling is extremely challenging due to their weak spectroscopic signatures and remains an open experimental problem. In this paper we theoretically investigate signatures of electron-phonon coupling in simulated linear and nonlinear spectra of SiV centers. We demonstrate how even extremely weak electron-phonon interactions, such as in SiV centers, may be completely characterized via nonlinear spectroscopic techniques and even resolved between different fine-structure transitions.
We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.
The negatively charged Silicon Vacancy (SiV) center in diamond has shown extraordinary promise for quantum information applications, in particular quantum networking, due to its long-lived spin memory and high-cooperativity spin-photon interface. In addition to these excellent demonstrations towards quantum networking, the SiV center has also been demonstrated to exhibit a large susceptibility to acoustic phonons. While this susceptibility is typically considered a drawback for necessitating low-temperature operation, it also presents an opportunity to study the strong interactions of SiV centers with acoustic fields. In this thesis, we will discuss several results that focus on the integration of SiV centers with diamond nanostructures with interesting acoustic properties. Through this integration, we will show both how the SiV center can be used as an unprecedented probe of these engineered acoustic environments and conversely how controlling the acoustic environment can be used to unlock new potential for SiV center based quantum networks. Together, these results point towards the SiV center as an exciting candidate for realizing novel hybrid quantum systems composed of photon-mediated quantum networks in the optical domain and phonon-mediated quantum systems in the microwave domain.
Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications due to the relative ease of fabrication of components. Silicon vacancy centers (SiV^{-}) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. Here, we demonstrate resonant coherent manipulation, stimulated Raman adiabatic passage, and strong light-matter interaction via the four-wave mixing of a weak signal field in an ensemble of SiV^{-} centers.