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Nanomaterials

Effects of Applied Magnetic Field on the Optical Properties and Binding Energies Spherical GaAs Quantum Dot with Donor Impurity

Collins Okon Edet, E. B. Al, Fatih Ungan, Norshamsuri Ali, Nursalasawati Rusli, Syed Alwee Aljunid, R. Endut, Muhammad Asjad

Published Aug 10, 2022• 22 citations
Publisher

Abstract

The screened modified Kratzer potential (SMKP) model is utilized to scrutinize the impacts of an applied magnetic field (MF) on the binding energies and linear and nonlinear optical properties spherical GaAs quantum dot with donor impurity (DI). To accomplish this goal, we have used the diagonalization method to numerically solve the Schrödinger equation under the effective mass approximation for obtaining the electron energy levels and related electronic wave functions. The expressions used for evaluating linear, third-order nonlinear, and total optical absorption coefficients and relative refractive index changes were previously derived within the compact density matrix method. It has been shown here that the MF and DI impacts the characteristics of the absorption coefficients and the refractive index changes. This study's results will find application in optoelectronics and related areas.

DOI
10.3390/nano12162741

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The screened modified Kratzer potential (SMKP) model is utilized to scrutinize the impacts of an applied magnetic field (MF) on the binding energies and linear and nonlinear optical properties spherical GaAs quantum dot with donor impurity (DI). To accomplish this goal, we have used the diagonalization method to numerically solve the Schrödinger equation under the effective mass approximation for obtaining the electron energy levels and related electronic wave functions. The expressions used for evaluating linear, third-order nonlinear, and total optical absorption coefficients and relative refractive index changes were previously derived within the compact density matrix method. It has been shown here that the MF and DI impacts the characteristics of the absorption coefficients and the refractive index changes. This study's results will find application in optoelectronics and related areas.
We study the linear and nonlinear optical properties of a spherical GaAs quantum dot with screened modified Kratzer potential (SMKP) by solving the time-independent Schrödinger wave equation using the diagonalization method. The obtained electronic properties of the system alongside the compact density formalism are used to evaluate the linear, third-order nonlinear and total optical absorption coefficients and change in the relative refractive index of the system. We show that the confinement potential parameters and optical intensity significantly affects the behaviour of absorption coefficients and refractive index changes. It is important to note that the findings of this study will find application in optoelectronics and related areas.
The linear and third-order nonlinear optical absorption coefficients (ACs) and the refractive index change (RIC) for a spherical quantum dot, having a hydrogenic impurity under an applied magnetic field have been theoretically studied. In numerical calculations, a variational scheme is adopted within effective mass approximation to determine the energy eigenvalues for the impurtiy. The variations of impurity binding energy with the dot radius, the linear and nonlinear ACs and RIC with the photon energy are investigated and effect of homogeneous magnetic field strength is discussed on these optical properties. It has been found that the binding energy, ACs and RIC are sensitively dependent on the magnetic field strength. Moreover, the calculated results also indicate that the absorption peak energies move to higher energies with increasing magnetic field.
Abstract This study explores how hydrostatic pressure, temperature, incident light intensity, and structural parameters modulate optical absorption coefficients and refractive index changes in GaAs/Al0.3Ga0.7As spherical quantum dots under the screened cosine Kratzer potential. We use the Nikiforov-Uvarov method to solve the Schrödinger equation to determine the relevant wave functions and energy levels. And using iterative method and density matrix theory, we derived analytical expressions for the optical absorption coefficients and refractive index changes. The results of the numerical analyses demonstrate that both the structural parameters of the quantum dots and the external environmental factors significantly influence the optical absorption coefficients and refractive index changes, with varying degrees of impact. It is particularly noteworthy that these factors are extremely important for modulating the peak amplitude and resonance peak position of the optical absorption coefficients and refractive index changes, providing important theoretical basis for us to deeply understand and modulate the nonlinear optical properties of quantum dots.
Linear and third order nonlinear optical absorption coefficients and refractive index changes of an on-center donor impurity in a spherical GaAs quantum dot which is located at the center of a cylindrical Ga 1 -x Al x As nano-wire, have been investigated under the simultaneous effect of electric field and laser radiation. The linear and third order nonlinear optical properties are calculated based on optical 1-2, 2-3 and 1-3 transitions by means of the compact density-matrix approach. The energy eigenvalues and corresponding wave functions are calculated using finite difference approximation and reliability of calculated wave functions is checked by computing orthogonality. It is shown that optical spectrum shifts towards lower and higher energies for 1-2 transition and shifts towards lower energies for 2-3 and 1-3 transitions as the electric field strength increases. The presence of laser field shifts absorption spectrum towards lower energies. In the absence of electric and laser field, the magnitude of absorption coefficient and refractive index changes increase in transitions between higher levels. Simultaneous presence of both electric field and laser radiation has great effect on magnitude of absorption coefficients and refractive index changes. The saturation in optical spectrum can be adjusted by electric field and laser radiation.
Confinement effects of Kratzer potential on a Wannier-Mott Exciton(W-M) are studied in a spherical quantum dot(QD) in the presence of a static magnetic field. Time independent Schro¨\ddot{o}o¨dinger equation is solved numerically to obtain the energy states. The excitonic transitions so realized have been used to explore the non-linear optical properties that are important for optical characterization of materials such as the optical absorption coefficients (ACs) and refractive index changes (RICs). Impact of magnetic field, strength of the laser field and transition parameters using familiar compact density matrix approach are also analyzed. It has been observed that optical properties get radically modified under confinement effects. Also, the shift of degeneracy of different excitonic energy levels with the magnetic field in confinement potential has been reported for the first time for W-M exciton in the spherical quantum dot, the study that may have crucial input to the literature and myriad of practical implications.
In this study, the effects of electric and tilted magnetic fields on changes in the total absorption coefficient and the refractive index, including the linear and third-order nonlinear terms for transition between the ground and first excited level of an electron confined within the GaAs/GaAlAs quantum well, have been investigated. Furthermore, the effects of the magnetic field direction (i.e., different tilt angles) and the well parameters as well as the electric field strength on the optical properties are taken into consideration. The energy levels and wave functions of the system are calculated by using the effective mass approximation and the compact density-matrix approach is used for optical transitions. The obtained results show that the optical properties of the system are sensitive to the applied external fields and well dimensions.