Conference on Lasers and Electro-Optics

In-Situ Single-Photon Detection of Er Sites in Si

Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Brett C. Johnson, Jeffrey Colin McCallum, Bin-Bin Xu, Shouyi Xie, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven M. J. Rogge

Published Jan 1, 2022• 0 citations

Publisher

Abstract

Using sample-on-SSPD and photoluminescence excitation spectroscopy, we demonstrate Er sites in Si with inhomogeneous broadening below 100 MHz, a 350 kHz upper bound on the homogeneous linewidth, and electron T1 lower bound of 1 second.

DOI: 10.1364/cleo_qels.2022.fm5d.5

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Conference on Lasers and Electro-Optics

In-Situ Single-Photon Detection of Er Sites in Si

Published Jan 1, 2022• 0 citations

Publisher

Abstract

DOI: 10.1364/cleo_qels.2022.fm5d.5

Related papers

Observing Er3+ Sites in Si With an In Situ Single-Photon Detector

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Photoluminescence of Er 3+ ions in amorphous silicon layers under intensive laser excitation

Boris V. Kamenev, Vladimir I Emel'yanov, Константинова Елизавета Александровна +5 more

Applied Physics BFeb 1, 20025 citations

We present a flexible method to study the optical properties of an

{\mathrm{Er}}^{3+}

ensemble in

\mathrm{Si}

accessed via resonant excitation and in situ single-photon detection. The technique allows an efficient resonant photoluminescence detection of optically active centers with weak oscillator strength in transparent crystals without the need for nanofabrication on the sample. We observe 70

{\mathrm{Er}}^{3+}

resonances in

\mathrm{Si}

, of which 62 resonances have not been observed in the literature, with optical lifetimes ranging from 0.5 to 1.5 ms. We observe inhomogeneous broadening of less than 400 MHz and an upper bound on the homogeneous linewidth of 0.75 and 1.4 MHz for two separate resonances. These narrow, stable resonances confirm

{\mathrm{Er}}^{3+}

\mathrm{Si}

as a promising quantum information candidate. We discuss the use of this technique for rapid characterization of future samples, with the aim of enhancing the prevalence of sites which are favorable for quantum information applications.

We present the results of detailed site-selective spectroscopy performed on the $^{4}I_{15∕2}\ensuremath{\leftrightarrow}^{4}I_{13∕2}$ transition of

{\mathrm{Er}}^{3+}:{\mathrm{Y}}_{2}\mathrm{Si}{\mathrm{O}}_{5}

at $1.5\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}$. New determinations of the

^{4}I_{13∕2}

and

^{4}I_{15∕2}

crystal-field-level structure for the two crystallographically inequivalent

{\mathrm{Er}}^{3+}

sites have been made. The fluorescence dynamics of the metastable

^{4}I_{13∕2}:{\mathrm{Y}}_{1}

excited state was investigated, showing exponential decays for

{\mathrm{Er}}^{3+}

at both crystallographic sites with fluorescence lifetimes of

11.4\phantom{\rule{0.3em}{0ex}}\mathrm{ms}

for site 1 and

9.2\phantom{\rule{0.3em}{0ex}}\mathrm{ms}

for site 2. Exceptionally sharp inhomogeneous absorption lines of 180, 390, and

510\phantom{\rule{0.3em}{0ex}}\mathrm{MHz}

were observed in 0.0015%

{\mathrm{Er}}^{3+}:{\mathrm{Y}}_{2}\mathrm{Si}{\mathrm{O}}_{5}

, 0.005%

{\mathrm{Er}}^{3+}:{\mathrm{Y}}_{2}\mathrm{Si}{\mathrm{O}}_{5}

, and 0.02%

{\mathrm{Er}}^{3+}:{\mathrm{Y}}_{2}\mathrm{Si}{\mathrm{O}}_{5}

crystals, respectively. The

g

-values for the lowest energy

^{4}I_{15∕2}

({\mathrm{Z}}_{1})

and

^{4}I_{13∕2}

({\mathrm{Y}}_{1})

doublets were measured to be 5.5 and 4.6 for site 1 and 15.0 and 12.9 for site 2 when the magnetic field was oriented along the crystal's ${\mathbit{D}}_{1}$ axis.