A superconducting nanowire single-photon imager (SNSPI) uses a time-multiplexing method to reduce the readout complexity. However, due to the serial connection, the nanowire should be uniform so that a common bias can set all segments of the nanowire to their maximum detection efficiency, which becomes more challenging as the scalability (i.e., the length of the nanowire) increases. Here, we have developed a 64-pixel SNSPI based on amorphous Mo80Si20 film, which yielded a uniform nanowire and slow transmission line. Adjacent detectors were separated by delay lines, giving an imaging field of 270 µm × 240 µm. Benefiting from the high kinetic inductance of Mo80Si20 films, the delay line gave a phase velocity as low as 4.6 µm/ps. The positions of all pixels can be read out with a negligible electrical cross talk of 0.02% by using cryogenic amplifiers. The timing jitter was 100.8 ps. Saturated internal quantum efficiency was observed at a wavelength of 1550 nm. These results demonstrate that amorphous film is a promising material for achieving SNSPIs with large scalability and high efficiency.
A superconducting nanowire single-photon imager (SNSPI) uses a time-multiplexing method to reduce the readout complexity. However, due to the serial connection, the nanowire should be uniform so that a common bias can set all segments of the nanowire to their maximum detection efficiency, which becomes more challenging as the scalability (i.e., the length of the nanowire) increases. Here, we have developed a 64-pixel SNSPI based on amorphous Mo80Si20 film, which yielded a uniform nanowire and slow transmission line. Adjacent detectors were separated by delay lines, giving an imaging field of 270 µm × 240 µm. Benefiting from the high kinetic inductance of Mo80Si20 films, the delay line gave a phase velocity as low as 4.6 µm/ps. The positions of all pixels can be read out with a negligible electrical cross talk of 0.02% by using cryogenic amplifiers. The timing jitter was 100.8 ps. Saturated internal quantum efficiency was observed at a wavelength of 1550 nm. These results demonstrate that amorphous film is a promising material for achieving SNSPIs with large scalability and high efficiency.
Detecting spatial and temporal information of individual photons is a crucial technology in today's quantum information science. Among the existing single-photon detectors, superconducting nanowire single-photon detectors (SNSPDs) have been demonstrated with a sub-50 ps timing jitter, near unity detection efficiency1, wide response spectrum from visible to infrared and ~10 ns reset time. However, to gain spatial sensitivity, multiple SNSPDs have to be integrated into an array, whose spatial and temporal resolutions are limited by the multiplexing circuit. Here, we add spatial sensitivity to a single nanowire while preserving the temporal resolution from an SNSPD, thereby turning an SNSPD into a superconducting nanowire single-photon imager (SNSPI). To achieve an SNSPI, we modify a nanowire's electrical behavior from a lumped inductor to a transmission line, where the signal velocity is slowed down to 0.02c (where c is the speed of light). Consequently, we are able to simultaneously read out the landing locations and arrival times of the photons from the output electrical pulses using only two connections. We have demonstrated single-photon imaging by using a 19.7 mm long SNSPI, which is meandered into an imaging area of 286 {\mu}m*193 {\mu}m. The nanowire has a temporal resolution of 50 ps for detecting 1.5 {\mu}m photons. The 2D spatial resolution is 13.0 {\mu}m in the vertical direction and 5.6 {\mu}m in the horizontal direction. The maximum number of resolvable locations (i.e., the effective number of pixels) in such a long nanowire is calculated to be 590. Rather than operating an individual detector in a scanning mode or using SPD arrays, this SNSPI gives an alternative approach to taking large-scale single-photon images and measuring temporal and spatial correlation.
Superconducting nanowire single photon detectors (SNSPDs) have demonstrated advantages over traditional detectors in many fields [1]. Most fiber-coupled SNSPDs are coupled to single mode fibers, limiting their usability for applications where large surface area detectors are needed, for example fluorescence detection and satellite-based quantum communication [2][3]. Other important requirements for many applications are broadband detection efficiency, and low timing jitter [4]. So far, the increased meander length of multimode detectors, and the therefore increased kinetic inductance and number of imperfections due to film inhomogeneities have limited the timing jitter [5]. Moreover, combining low timing jitter with high detection efficiency and low dark count rate in one device is challenging due to the tradeoffs between different properties of SNSPDs [6]. In this paper, we achieved high efficiency and strong saturation over a broad wavelength range with a low timing jitter of 16.99 ps while maintaining a low dark count rate of < 0.2 Hz for an SNSPD coupled to a 50 µm core multimode fiber. To enhance the broadband absorption from 405 nm to 830 nm, detectors were fabricated on an optimized SiO2 cavity and Aluminum mirror. The geometry of the nanowire was also tuned to reach a good internal saturation of efficiency over the visible/NIR range but also to carry high current to get a large signal. Furthermore, a cryogenic readout amplifier was optimized to improve the signal to noise ratio and thus lead to high time resolution. Our devices can be readily used to enable higher resolution and faster quantum optics, bio-imaging, laser ranging and other optical experiments.
Amorphous materials are attractive candidates for fabricating the superconducting nanowire single-photon detectors (SNSPDs) due to their superior tolerance and scalability over crystalline niobium nitride. However, the reduced superconducting transition temperature degenerates both operating temperature and saturation efficiency. Herein, the SNSPD (6.5 nm thickness and 50 nm width) based on the amorphous Mo 0.8 Si 0.2 film with a high optical absorption coefficient demonstrates close-to-unity intrinsic detection efficiency for 1550 nm photons from 75 mK to 2.2 K. Further, a high-performance array SNSPD with optimized 90 nm-width wires is also demonstrated. As-fabricated uniform 4-pixel SNSPD exhibits a saturation plateau for the photon counts at 2.2 K, which overcomes the limitation of operation at low temperature ( < 1 K ) for traditional amorphous SNSPDs. Coupled with superior intrinsic quantum efficiency, highly efficient photon counts, and low dark count ratio, this detector paves a way for achieving high efficiency and superior yield for large array systems.
Superconducting nanowire single photon detectors (SNSPDs) promise to combine near-unity quantum efficiency with >100 megacounts per second rates, picosecond timing jitter, and sensitivity ranging from x-ray to mid-infrared wavelengths. However, this promise is not yet fulfilled, as superior performance in all metrics is yet to be combined into one device. The highest single-pixel detection efficiency and the widest bias windows for saturated quantum efficiency have been achieved in SNSPDs based on amorphous materials, while the lowest timing jitter and highest counting rates were demonstrated in devices made from polycrystalline materials. Broadly speaking, the amorphous superconductors that have been used to make SNSPDs have higher resistivities and lower critical temperature (Tc) values than typical polycrystalline materials. Here, we demonstrate a method of preparing niobium nitride (NbN) that has lower-than-typical superconducting transition temperature and higher-than-typical resistivity. As we will show, NbN deposited onto unheated SiO2 has a low Tc and high resistivity but is too rough for fabricating unconstricted nanowires, and Tc is too low to yield SNSPDs that can operate well at liquid helium temperatures. By adding a 50 W RF bias to the substrate holder during sputtering, the Tc of the unheated NbN films was increased by up to 73%, and the roughness was substantially reduced. After optimizing the deposition for nitrogen flow rates, we obtained 5 nm thick NbN films with a Tc of 7.8 K and a resistivity of 253 μΩ cm. We used this bias sputtered room temperature NbN to fabricate SNSPDs. Measurements were performed at 2.5 K using 1550 nm light. Photon count rates appeared to saturate at bias currents approaching the critical current, indicating that the device's quantum efficiency was approaching unity. We measured a single-ended timing jitter of 38 ps. The optical coupling to these devices was not optimized; however, integration with front-side optical structures to improve absorption should be straightforward. This material preparation was further used to fabricate nanocryotrons and a large-area imager device, reported elsewhere. The simplicity of the preparation and promising device performance should enable future high-performance devices.
Superconducting nanowire single photon detectors (SNSPD) made from amorphous superconductors have showed great promise for achieving high fabrication yields, due to the highly uniform nature of the films. We present progress on the development of SNSPD based on amorphous MoSi with a critical temperature of around 5 K, which is ideal for detector operation at temperatures of 1 – 2.5 K, accessible with widely available cryogenic systems. First generation devices have achieved a saturated internal efficiency from visible to near-infrared wavelengths, which is the first requirement for high overall system efficiency. The broadband response has allowed us to make a robust study the energy-current relation in these devices, which defines the current required for a saturated internal detection efficiency for a given incident photon energy. Contrary to previous studies with other material systems, we find a nonlinear energy-current relation, which is an important insight into the detection mechanism in SNSPDs. The latest generation devices have been embedded into an micro-cavity structure in order to increase the system detection efficiency, which has increased to over 65% at 1550 nm. The efficiency is believed to be limited by fabrication imperfections and we present ongoing progress towards improving this characteristic as well as the yield of the devices. Efforts are also being made towards increasing the maximum operating temperature of the devices.
Superconducting nanowire single-photon detectors (SNSPDs) are the leading technology for low noise, high efficiency infrared single-photon detection. The basic SNSPD consists of a nanowire patterned in an ultrathin superconducting thin film, which is cooled below its critical temperature and biased close to its critical current. The absorption of a single-photon creates a resistive region, triggering a fast output voltage pulse which can be readily amplified and registered. The excellent performance of SNSPDs at near-infrared and telecommunications wavelengths has led to their adoption in important applications such as quantum secure communications, single-photon spectroscopy and single-photon LIDAR. A clear challenge for the SNSPD community is to extend the spectral range of SNSPDs into the mid infrared, and to improve material uniformity to enable the realization of large area arrays for multimode or free space coupling. The aim of this work is to evaluate potential materials for next generation mid-infrared SNSPD arrays. In this work, thin films of polycrystalline NbN and amorphous MoSi have been optimized to test the uniformity of a multipixel array configuration composed of 8 nanowire meander structures covering 10 um x 10 um area, 100 nm width and 50% filling factor. The 8-pixels SNSPD arrays have been patterned on 8 nm thickness NbN grown on high resistivity silicon (HR Si) substrate at room temperature and at 800 °C exhibiting respectively 4.4 K and 7.3 K as mean critical temperature across the pixels. The 8- pixels SNSPD array patterned on 8 nm thickness MoSi cooling the HR Si substrate to -180 °C has exhibited a mean critical temperature of 3.2 K across the pixels. Optical properties have been measured by an attenuated 1550 nm laser diode source delivered by single mode optical fibre at a controlled distance from the chip in order to broadly illuminate the array. The optical properties have been studied only for the 8 nm thickness NbN SNSPD array grown at room temperature has demonstrated uniform optical properties across pixels exhibiting similar saturation of the internal efficiency over a large bias, similar dark count rate and similar timing jitter (about 137 ps) across pixels. In the single photon regime at 1550 nm, pixels 4 and 6 of the 8 nm thickness NbN SNSPD array exhibit 28.4% and 4.7% pixel detection efficiency as measured at the bias current 95% of their respective critical current at 2.2 K.