Disordered superconducting nitrides with kinetic inductance have long been considered a leading material candidate for high-inductance quantum-circuit applications. Despite continuing efforts in reducing material dimensions to increase the kinetic inductance and the corresponding circuit impedance, it becomes a fundamental challenge to improve further without compromising material qualities. To this end, we propose a method to drastically increase the kinetic inductance of superconducting materials via spinodal decomposition while keeping a low microwave loss. We use epitaxial Ti\textsubscript{0.48}Al\textsubscript{0.52}N as a model system, and for the first time demonstrate the utilization of spinodal decomposition to trigger the insulator-to-superconductor transition with a drastically enhanced material disorder. The measured kinetic inductance has increased by 2-3 orders of magnitude compared with all the best reported disordered superconducting nitrides. Our work paves the way for substantially enhancing and deterministically controlling the inductance for advanced superconducting quantum circuits.
Granular aluminum is a promising material for high kinetic inductance devices such as qubit circuits. It has the advantage over atomically disordered materials such as NbNx, to maintain a high kinetic inductance concomitantly with a high quality factor. We show that high quality nano-scale granular aluminum films having a sharp superconducting transition with normal state resistivity values on the order of 1×105 μΩ cm and kinetic inductance values on the order of 10 nH/◻ can be obtained, surpassing the state-of-the-art values. We argue that this is a result of the different nature of the metal-to-insulator transition, being electronic correlations driven (Mott type) in the former and disorder driven (Anderson type) in the latter.
Abstract Low microwave loss and regulatable kinetic inductance are two key characteristics of superconducting films to manufacture high-performance quantum devices. Epitaxial titanium nitride (TiN) thin films have been found to exhibit significant advantages in these two aspects. In this paper, we investigated into the dielectric loss and kinetic inductance of epitaxial TiN films, which were prepared on both silicon and sapphire substrates with different temperatures. Crystal structure, surface morphology, and superconducting properties were characterized systematically. The radio-frequency response of microwave resonators made of TiN films was studied at low temperatures to extract the information of kinetic inductance and quality factor. We obtained the highest internal quality factor up to 1.6 × 10 6 at single photon regime and achieved a regulation of kinetic inductance exceeding 16 times by altering the substrate and the sputtering temperature of the TiN films. This work not only provides an essential foundation for the precise design and preparation of low-loss TiN resonators for superconducting quantum bits, but also demonstrates TiN film as an excellent material platform with both low microwave loss and high kinetic inductance that can be applied in other fields such as microwave kinetic inductance detectors.
Niobium nitride (
NbN) is a particularly promising material for quantum technology applications, as it shows the degree of reproducibility necessary for large-scale superconducting circuits. We demonstrate that resonators based on
NbN thin films present a one-photon internal quality factor above
105 maintaining a high impedance (larger than $2\mathrm{k}\mathrm{\ensuremath{\Omega}}$), with a footprint of approximately $50\ifmmode\times\else\texttimes\fi{}100\phantom{\rule{0.2em}{0ex}}\text{\ensuremath{\mu}}{\mathrm{m}}^{2}$ and a Kerr nonlinearity of few tenths of a hertz. These quality factors, mostly limited by losses induced by the coupling to two-level systems, have been maintained for kinetic inductances ranging from tenths to hundreds of picoHenry per square. We also demonstrate minimal variations in the performance of the resonators during multiple cooldowns over more than nine months. Our work proves the versatility of niobium nitride high-kinetic-inductance resonators, opening perspectives towards the fabrication of compact, high-impedance, and high-quality multimode circuits, with sizable interactions.
Disordered superconducting materials with high kinetic inductance are an important resource for generating nonlinearity in quantum circuits and creating high-impedance environments. In thin films fabricated from these materials, the combination of disorder and low effective dimensionality leads to increased order parameter fluctuations and enhanced kinetic inductance values. Among the challenges of harnessing these compounds in coherent devices are their proximity to the superconductor-insulator phase transition and the two-level systems located in the disordered structure. Here, we fabricate tungsten silicide wires from quasi-two-dimensional films and embed them into microwave resonators and fluxonium qubits, where the kinetic inductance provides the inductive part of the circuits. In this work, we study the dependence of loss on the frequency, disorder, and geometry of the devices, and find that the loss increases with the level of disorder and is dominated by the localized quasiparticles trapped in the spatial variations of the superconducting gap. High kinetic inductance materials are widely used in superconducting circuits, yet their loss mechanisms are not fully understood. Here the authors study quantum circuits incorporating nanowires made of quasi-2D disordered superconductor WSi and identify localized quasiparticles as the dominant source of loss.
Superconducting circuits based on high kinetic inductance materials are promising candidates for future quantum technologies, owing to their magnetic field resilience, low microwave losses, and lithographic scalability. In this thesis, we explore the properties of granular aluminum (grAl) resonators in two distinct geometries, using the nonlinear kinetic inductance of grAl for applications in superconducting quantum circuits. In the first part, we present compact meandered ring resonators fabricated using a single-step electron-beam lithography and lift-off process. By optimizing film resistivity and geometry, we achieve superinductors with characteristic impedances exceeding
100 kΩ, corresponding to total inductances of several microhenries, while maintaining internal quality factors on the order of
105 in the single-photon regime. In the second part, we investigate DC-tunable resonators based on a
3λ/4 fractal geometry that allows direct current injection for in-situ tuning of the resonance frequency. We achieve frequency tunability up to
4.5% and analyze the nonlinear kinetic inductance using models based on Ginzburg-Landau, Mattis-Bardeen-BCS, and an effective Josephson-junction-array model. This work establishes granular aluminum as a material for realizing high-impedance and frequency-tunable superconducting circuits, offering new opportunities for advanced applications in protected qubits, hybrid quantum systems, broadband phase shifters, and three-wave mixing parametric amplifiers.