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Lecture notes in physics. M, Monographs

Photoelectric Detection I

Published Feb 16, 2009• 0 citations
Publisher
DOI
10.1007/978-3-540-47620-7_6

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Photoelectrical detection of magnetic resonance (PDMR) offers a scalable alternative to optical readout of spin defects in semiconductors and is particularly promising for near-infrared (NIR) emitters, where photodetection is often challenging. Here, we demonstrate room-temperature coherent PDMR of PL3 (divacancy), PL5, PL6, and PL7 spins. PL7 and PL5 exhibit notably stronger PDMR than PL6 as opposed to optical detection, indicating higher ionization efficiency and suitability for electrical readout. Rabi oscillation and two-frequency spectroscopy reveal a previously undiscovered secondary resonance of PL7. We determine the zero-field splitting parameters of PL7 and assign the recently reported PL3a defect to PL7. The demonstrated PDMR of these NIR defects constitutes a key advancement toward quantum electronic devices. Also, the clarified spin parameters and ionization characteristics provide a solid foundation for advancing quantum technologies utilizing these defects regardless of the detection schemes.

quant-pharXiv:2512.05283•Dec 8, 2025
Abstract A novel method for reading out the electron spin state of the negatively charged nitrogen‐vacancy (NV) point defect in diamond, based on photoelectric detection of NV magnetic resonances (PDMR), is reviewed. As a convenient way to measure the spin state of qubits, the presented technique is anticipated to lead to a vast range of applications in the field of quantum technologies. It has been demonstrated that this method can be used both in continuous‐wave mode and for the pulse readout of coherently manipulated NV− spins. The PDMR technique presents interesting advantages over the commonly used optical detection of magnetic resonances (ODMR) and was recently downscaled to the reading out of a single NV− spin qubit. The principles, current developments, advantages, and drawbacks of PDMR are presented in this progress report. A complete to‐date methodology of NV photoelectric readout is described and PDMR is compared to ODMR. Future developments and possible improvements of the technique are mentioned. The results of the latest studies, aiming at overcoming limitations in the PDMR contrast through a better understanding of NV photo‐physics and of charge exchanges between NV centers and other electrically active defects, are discussed.
Photoelectrical detection of magnetic resonance (PDMR) offers a scalable alternative to optical readout of spin defects in semiconductors and is particularly promising for near-infrared (NIR) emitters, where photodetection is often challenging. Here, we demonstrate room-temperature coherent PDMR of PL3 (divacancy), PL5, PL6, and PL7 spins. PL7 and PL5 exhibit notably stronger PDMR than PL6 as opposed to optical detection, indicating higher ionization efficiency and suitability for electrical readout. Rabi oscillation and two-frequency spectroscopy reveal a previously undiscovered secondary resonance of PL7. We determine the zero-field splitting parameters of PL7 and assign the recently reported PL3a defect to PL7. The demonstrated PDMR of these NIR defects constitutes a key advancement toward quantum electronic devices. Also, the clarified spin parameters and ionization characteristics provide a solid foundation for advancing quantum technologies utilizing these defects regardless of the detection schemes.