This article reviews recent progress in superconducting nanodevices, with particular emphasis on fabrication methods developed for superconducting nanowires and nanoscale Josephson junctions based on different barrier materials. It evaluates the future potential of superconducting nanodevices, including nano-superconducting quantum interference devices (nanoSQUIDs), in light of improvements in nanoscale fabrication and manipulation techniques, along with their likely impacts on future quantum technology and measurement. The article first considers efforts to realize devices at the physical scale of 100 nm and below before discussing different types of Josephson junction such as trilayer junctions. It also describes the use of focused ion beam milling and electron beam lithography techniques for junction fabrication at the nanoscale and the improved energy sensitivity detectable with a nanoSQUID. Finally, it looks at a range of applications for nanoSQUIDs, superconducting single photon detectors, and other superconducting nanodevices.
This article reviews recent progress in superconducting nanodevices, with particular emphasis on fabrication methods developed for superconducting nanowires and nanoscale Josephson junctions based on different barrier materials. It evaluates the future potential of superconducting nanodevices, including nano-superconducting quantum interference devices (nanoSQUIDs), in light of improvements in nanoscale fabrication and manipulation techniques, along with their likely impacts on future quantum technology and measurement. The article first considers efforts to realize devices at the physical scale of 100 nm and below before discussing different types of Josephson junction such as trilayer junctions. It also describes the use of focused ion beam milling and electron beam lithography techniques for junction fabrication at the nanoscale and the improved energy sensitivity detectable with a nanoSQUID. Finally, it looks at a range of applications for nanoSQUIDs, superconducting single photon detectors, and other superconducting nanodevices.
Abstract In this Perspective article, we evaluate the current state of research on the use of focused electron and ion beams to directly fabricate nanoscale superconducting devices with application in quantum technologies. First, the article introduces the main superconducting devices and their fabrication by means of standard lithography techniques such as optical lithography and electron beam lithography. Then, focused ion beam patterning of superconductors through milling or irradiation is shown, as well as the growth of superconducting devices by means of focused electron and ion beam induced deposition. We suggest that the key benefits of these resist-free direct-growth techniques for quantum technologies include the ability to make electrical nanocontacts and circuit edit, fabrication of high-resolution superconducting resonators, creation of Josephson junctions and superconducting quantum interference device (SQUIDs) for on-tip sensors, patterning of high-Tc SQUIDs and other superconducting circuits, and the exploration of fluxtronics and topological superconductivity.
The requirements of quantum metrology and nanoscience are driving the need for single-particle detection capability across a wide variety of physics areas, including quantum information processing, single-photon detection, nanoelectromechanical systems, nanomagnetism and spintronics. The single particles to be detected include atoms, molecules, photons, spins and even phonons, in the future. Nanoscale superconducting quantum interference devices (nanoSQUIDs) represent a new manifestation of an old but exciting superconducting technology which addresses some of these requirements. In this paper we describe a straightforward approach to fabricating Nb microbridge weak links using combined optical lithography and focused ion beams which may be used to fabricate nanoSQUIDs. The devices show non-hysteretic current?voltage characteristics and demonstrate very low noise, even at operating temperatures above 4.2?K. To improve our understanding of the superconducting properties of the Josephson microbridge/nanobridge junctions which have proved very successful in realizing low noise nanoSQUIDs we have carried out a combination of investigations. These include cryogenic resistance versus temperature (R(T)) and current?voltage characteristic measurements, atomic force microscope scans, controlled gallium (Ga) ion milling and implantation, and ion beam track modelling of these Josephson devices and Nb thin films.
Recent improvements in materials growth and fabrication techniques may finally allow for superconducting semiconductors to realize their potential. Here, we build on a recent proposal to construct superconducting devices such as wires, Josephson junctions, and qubits inside and out-of single crystal silicon or germanium. Using atomistic fabrication techniques such as STM hydrogen lithography, heavily doped superconducting regions within a single crystal could be constructed. We describe the characteristic parameters of basic superconducting elements-a 1-D wire and a tunneling Josephson junction-and estimate the values for boron-doped silicon. The epitaxial, single-crystal nature of these devices, along with the extreme flexibility in device design down to the single-atom scale, may enable lower noise or new types of devices and physics. We consider applications for such supersilicon devices, showing that the state-of-the-art transmon qubit and the sought-after phase-slip qubit can both be realized. The latter qubit leverages the natural high kinetic inductance of these materials. Building on this, we explore how kinetic inductance-based particle detectors (e.g., photon or phonon) could be realized with potential application in astronomy or nanomechanics. We discuss supersemi devices (such as in silicon, germanium, or diamond) which would not require atomistic fabrication approaches and could be realized today.
Researches on the fabrication of ~ 0.1 × 0.1 μ m 2 superconductor–insulator–superconductor (SIS) Josephson junctions are reviewed. Today, a typical dimension is 1–10 μm for Josephson junctions in superconducting integrated circuits. These Josephson junctions are defined by well-established photolithographic technology with reactive ion etching (RIE), and for the superconductor, Nb is almost always used. The merits of Nb include the facts that the superconducting transition temperature Tc of Nb (9.2 K ) is higher than the boiling point of He (4.2 K ), and that Nb has excellent stability against thermal cycling between room temperature and liquid- He temperature. For the fabrication of ~ 0.1 × 0.1 μ m 2 junctions, on the other hand, there is a standard process with electron-beam lithography, shadow evaporation, and lift-off. This process works well for Al (Tc = 1.2 K ), however, it is not ideal for Nb . The scope of this brief review is the nanoscale junction with Nb electrodes. We will look at the efforts of optimizing the standard lift-off process for Nb , electron-beam-lithographic versions of the Nb Josephson-junction technology, focused-ion-beam (FIB) etching as a convenient alternative to electron-beam lithography and RIE, etc. In order to characterize nanoscale tunnel junctions, the single-charge transistor has been often fabricated. Therefore, a summary of its theoretical transport properties is also included.
SQUIDs (superconducting quantum interference devices) have been in use for more than half a century and constitute one of the first macroscopic quantum devices. SQUIDs operating at millikelvin temperatures can act as qubits for quantum computers and the recent reports of more than 50 qubit circuits indicate how far the technology has developed. In this talk, the author will describe two other applications of SQUIDs as quantum detectors, focusing on single spin and single photon energy resolving detection. Most superconducting devices rely on tri-layer Josephson tunnel junctions which are not easily scalable to the nanoscale. We have developed a Josephson junction fabrication method, based on electron beam lithography or focused ion beam milling of a single thin film of superconductor (Nb generally) which can provide sizes down to 50 nm. These devices are particularly relevant for two main applications in quantum technology and metrology. First, by shrinking the size of the SQUID loop and the junctions to around 200 nm, the sensitivity of the SQUID for magnetization measurements is improved to the level where a single electron spin flip may be detected. This is possible at the relatively elevated temperature of 4K.
We are working with Surrey University to implant single magnetic ions within the SQUID loop to provide a platform to test this combination as the basis for a new form of qubit operating at higher temperatures than the conventional Transmon superconducting devices. A second SQUID based detector which we are developing is an inductive transition edge sensor device (ISTED) for energy resolving measurements of single photons. This is based on the development of conventional transition edge sensors where we detect the change of the penetration depth of a small thin film of superconductor when it absorbs a photon. In this way, a major source of noise in conventional TES may be avoided since the absorber remains in the superconducting state at all times. In this way we have demonstrated single photon detection at 633 nm with 0.1eV resolution at operating temperature of 7.5K.
Science and industry demand ever more sensitive measurements on ever smaller systems, as exemplified by spintronics, nanoelectromechanical system, and spin-based quantum information processing, where single electronic spin detection poses a grand challenge. Superconducting quantum interference devices (SQUIDs) have yet to be effectively applied to nanoscale measurements. Here, we show that a simple bilayer deposition route, combining photolithography with focused ion beam patterning, produces high performance nanoscale SQUIDs. We present results of noise measurements on these nanoSQUIDs which correspond to a magnetic flux sensitivity of around 0.2μΦ0∕Hz1∕2. This represents one of the lowest noise values achieved for a SQUID device operating above 1K.