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Conference on Lasers and Electro-Optics

Beyond photon pairs: Nanophotonic photon number difference squeezing

Reihaneh Shahrokhshahi, Blair Morrison, Matthew J. Collins, L. G. Helt, Nicolás Quesada, Dylan H. Mahler, K. Tan, Varun Vaidya, A. Repingon, Jonathan Lavoie, M. Menotti, Raphael C. Pooser, Adriana E. Lita, Sae Woo Nam, Thomas Gerrits, Z. Vernon

Published Jan 1, 2019• 0 citations
Publisher

Abstract

We demonstrate over 1 dB of photon number difference correlations from two-mode squeezed states having mean photon number above 5, generated with a silicon nitride ring resonator and measured using photon number-resolving transition edge sensors.
DOI
10.1364/cleo_qels.2019.fth4d.6

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Measuring the photon number distribution (PND) of optical states allows one to extract metrics of non-classicality of fundamental and technological relevance, but requires in principle the use of detectors with photon number resolving capabilities (PNR). Here we reconstruct the PND of two-mode pulsed squeezed light generated from a silicon nitride microresonator using threshold detectors and variable optical attenuations. The PNDs are characterized up to ∼1.2\sim 1.2∼1.2 photons/pulse, corresponding to an on-chip squeezing level of 6.2(2) dB6.2(2) \ \mathrm{dB}6.2(2) dB and a noise reduction factor (photon number difference squeezing) of 3.8(2) dB3.8(2) \ \mathrm{dB}3.8(2) dB. The analysis performed on the photon-number basis allows us to additionally characterize the influence of a spurious thermal background field that reduces the photon number correlations.
The measurement of the photon number distribution (PND) allows one to extract metrics of non-classicality of fundamental and technological relevance, but in principle it requires the use of detectors with photon number resolving (PNR) capabilities. In this work we reconstruct the PND of two-mode pulsed squeezed light generated from a silicon nitride microresonator using threshold detectors and variable optical attenuations. The PNDs are characterized up to ∼1.2 photons per pulse, through which we extracted an on-chip squeezing level of 6.2(2) dB and a noise reduction factor of −3.8(2) dB. The PNDs are successfully reconstructed up to a Hilbert space dimension of 6 × 6. The analysis performed on the photon number basis allows us to characterize the influence of a spurious thermal background field that spoils the photon number correlations. We evaluate the impact of self- and cross-phase modulation on the generation efficiency in case of a pulsed pump, and validate the results through numerical simulations of the master equation of the system.
Integration of quantum optical technique on-chip is crucial for large scale applications of quantum technology, which were proven in a free space environment to be superior to the corresponding classical technology. Squeezed states of light can be used for enhancing the sensitivity of quantum sensors and for fault-tolerant quantum computing. Although chip-based squeezed light generation has advanced significantly, practical impact remains limited because coupling losses between the chip and off-chip detectors destroy delicate quantum correlations, restricting the amount of observed squeezing. Here, we overcome this limitation by implementing the idea of on-chip quantum measurement with the aid of a parametric amplifier and applying it to the squeezed state generated by a silicon nitride (SiN) microring resonator. In our scheme, two matched SiN micro-rings are sequentially constructed. The first ring generates a squeezed state, whereas the second ring acts as a high-gain parametric amplifier (PA) that measures the squeezed state before the light experiences significant off-chip loss. This architecture is inherently loss-tolerant: the amplifier elevates the quantum noise well above the vacuum level, making the measurement insensitive to downstream losses. We directly observe a quantum noise reduction of 4.6 dB from the first ring, despite a chip-to-fiber coupling loss exceeding 5 dB. This work also demonstrates the first monolithic SU(1,1) interferometer with an estimated 5 dB signal-to-noise enhancement compared to traditional linear interferometers, and thus establishes a practical pathway for chip-based quantum sensors.