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Conference on Lasers and Electro-Optics

Revealing the Orientation Dependence of Coherent Coupling in Silicon-Vacancy Centers in Diamond

Matthew W. Day, Kelsey M. Bates, Christopher L. Smallwood, Ronald Ulbricht, Travis M. Autry, Rachel Owen, Geoffrey Diederich, Tim Schröder, Edward S. Bielejec, Mark E. Siemens, Steven T. Cundiff

Published Jan 1, 2019• 0 citations
Publisher

Abstract

We investigate the orientation dependence of coherent coupling in the zero-phonon line of an ensemble of SiV− centers in diamond. The results indicate that crystal orientation and polarization could be tools for coherent optical control.
DOI
10.1364/cleo_qels.2019.fm3d.1

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We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100 μs at low-temperature, and a spin relaxation limit of T_{1}>25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.
An ensemble of silicon vacancy (SiV−) centers in diamond is probed using two-pulse correlation spectroscopy and multidimensional coherent spectroscopy. Two main distinct families of SiV− centers are identified, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Measurements are made at multiple points on the sample surface, and variations in the strain tensor are observed.
Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal diamond membrane generated by ion implantation and electrochemical liftoff followed by homo-epitaxial overgrowth. Whispering gallery modes spectrally overlap with the zero-phonon line (ZPL) of the SiV centers and exhibit quality factors ∼ 2200. Lifetime reduction from 1.8 ns to 1.48 ns is observed from SiV centers in the cavity compared to those in the membrane outside the cavity. These results are pivotal in developing diamond integrated photonics networks.
Vacancy centers in diamond have proven to be a viable solid-state platform for quantum-coherent optoelectronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an inversion-symmetric system that is less susceptible to electron-phonon interactions. Nevertheless, phonon-mediated processes still degrade the coherent properties of SiV centers; however, characterizing their electron-phonon coupling is extremely challenging due to their weak spectroscopic signatures and remains an open experimental problem. In this paper we theoretically investigate signatures of electron-phonon coupling in simulated linear and nonlinear spectra of SiV centers. We demonstrate how even extremely weak electron-phonon interactions, such as in SiV centers, may be completely characterized via nonlinear spectroscopic techniques and even resolved between different fine-structure transitions.