FABRICATION AND CHARACTERIZATION OF THE FILM PARAMETERS IN ION-IMPLANT Nb BRIDGES WITH THICK Pb BANKS was published in SQUID ’80. Superconducting Quantum Interference Devices and their Applications on page 345.
We have fabricated superconducting quantum interference devices (dc SQUID’s) from thin films of the superconducting oxide YBa2Cu3Oy. The devices were made by first lithographically patterning an ion implant mask containing a 40 by 40 μm loop and two 17-μm-wide weak links over a ∼1-μm-thick oxide film. Ion implantation was then used to destroy the superconductivity in the film surrounding the device without actually removing material, resulting in a completely planar structure for the SQUID’s. The SQUID’s were operated in the temperature range from 4.2 to 68 K. The superconducting flux quantum was measured to be h/2e in these materials.
This paper discusses the preparation of thin-film planar dc superconducting quantum interference devices (SQUIDs). Nb-oxide-Pb tunnel junctions fabricated using CF4 cleaning process (CFCP) and Pd thin-film shunt resistor were employed. It was demonstrated that the two junctions in a SQUID have symmetrical and wellcontrolled junction parameters. Pd adhesion with oxidized Si could be improved by ultrathin Zr underlayers. The Pd films allowed good controt of the sheet resistance. The SQUIDs are very reliable in regard to room-temperature storage and thermal cycling.