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Journal of Modern Optics

The breakdown flash of silicon avalanche photodiodes--back door for eavesdropper attacks?

Patrick Zarda, Sonja Mayer, Christian Kurtsiefer, Harald Weinfurter

Published Nov 20, 2001• 15 citations

DOI: 10.1080/09500340110070235

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Quantum cryptography has been developed from being a theoretical proposal to having real world applications, with companies developing and selling quantum key distribution (QKD) instruments commercially. Although laws of quantum physics guarantee perfect security in the key distribution protocol, several vulnerabilities in the practical implementations have been described and demonstrated. In some of these attacks the eavesdropper has been able to acquire the entire secret key without being detected by the two communicating parties. This thesis describes an experimental setup for automatically characterizing and damaging single photon avalanche photodiodes using a high power laser to damage the diode with the intention to find new weaknesses in QKD systems. Hopefully, the discovery of loopholes will stimulate the researchers and commercial manufacturers to fix their implementations, leading to more secure systems. For a silicon avalanche photodiode (APD) in a passive-quenching circuit, a number of interesting results have been found. It has been shown that we are able to change many of the APDs key characteristics by applying strong illumination. We have been able to reduce the dark count rate of several APDs by up to 80% in a predictable way by strong laser illumination, an effect which is believed to be caused by localized annealing. This is an interesting result not only in the field of quantum cryptography, but perhaps also for improving the manufacturing process of different semiconductor components. Other parameters that have been found to change in interesting ways are the dark current and the breakdown voltage. It has been demonstrated that these changes may compromise the security of QKD systems.

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Silicon avalanche photodiodes are the most sensitive photodetectors in the visible to near-infrared region for a wavelength <1000 nm. However, when they are used for single photon detection in a Geiger mode, they are known to emit light on the controlled breakdown used to detect a photoelectron. This fluorescence light might have serious impacts on experimental applications like quantum cryptography or single-particle spectroscopy. We characterized the fluorescence behaviour of silicon avalanche photodiodes in the experimentally simple passive quenching configuration and discuss implications for their use in quantum cryptography systems.

Quantum key distribution (QKD) at telecom wavelengths (1260 - 1625 nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, Indium Gallium Arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their Silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000 nm and 1600 nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.

Quantum cryptography has been developed from being a theoretical proposal to having real world applications, with companies developing and selling quantum key distribution (QKD) instruments commercially. Although laws of quantum physics guarantee perfect security in the key distribution protocol, several vulnerabilities in the practical implementations have been described and demonstrated. In some of these attacks the eavesdropper has been able to acquire the entire secret key without being detected by the two communicating parties. This thesis describes an experimental setup for automatically characterizing and damaging single photon avalanche photodiodes using a high power laser to damage the diode with the intention to find new weaknesses in QKD systems. Hopefully, the discovery of loopholes will stimulate the researchers and commercial manufacturers to fix their implementations, leading to more secure systems. For a silicon avalanche photodiode (APD) in a passive-quenching circuit, a number of interesting results have been found. It has been shown that we are able to change many of the APDs key characteristics by applying strong illumination. We have been able to reduce the dark count rate of several APDs by up to 80% in a predictable way by strong laser illumination, an effect which is believed to be caused by localized annealing. This is an interesting result not only in the field of quantum cryptography, but perhaps also for improving the manufacturing process of different semiconductor components. Other parameters that have been found to change in interesting ways are the dark current and the breakdown voltage. It has been demonstrated that these changes may compromise the security of QKD systems.