Abstract A major challenge for quantum computers is the scalable simultaneous execution of quantum gates. One approach to address this in trapped ion quantum computers is the implementation of quantum gates based on static magnetic field gradients and global microwave fields. In this paper, we present the fabrication of surface ion traps with integrated copper current carrying wires embedded inside the substrate below the ion trap electrodes, capable of generating high magnetic field gradients. The copper layer’s measured sheet resistance of 1.12 mΩ/sq at room temperature is sufficiently low to incorporate complex designs, without excessive power dissipation at high currents causing a thermal runaway. At a temperature of 40 K the sheet resistance drops to 20.9 μΩ/sq giving a lower limit for the residual resistance ratio of 100. Continuous currents of 13 A can be applied, resulting in a simulated magnetic field gradient of 144 T m−1 at the ion position, which is 125 μm from the trap surface for the particular anti-parallel wire pair in our design.
Abstract A major challenge for quantum computers is the scalable simultaneous execution of quantum gates. One approach to address this in trapped ion quantum computers is the implementation of quantum gates based on static magnetic field gradients and global microwave fields. In this paper, we present the fabrication of surface ion traps with integrated copper current carrying wires embedded inside the substrate below the ion trap electrodes, capable of generating high magnetic field gradients. The copper layer’s measured sheet resistance of 1.12 mΩ/sq at room temperature is sufficiently low to incorporate complex designs, without excessive power dissipation at high currents causing a thermal runaway. At a temperature of 40 K the sheet resistance drops to 20.9 μΩ/sq giving a lower limit for the residual resistance ratio of 100. Continuous currents of 13 A can be applied, resulting in a simulated magnetic field gradient of 144 T m−1 at the ion position, which is 125 μm from the trap surface for the particular anti-parallel wire pair in our design.
A major challenge for quantum computers is the scalable simultaneous execution of quantum gates. One approach to address this in trapped ion quantum computers is the implementation of quantum gates based on static magnetic field gradients and global microwave fields. In this paper, we present the fabrication of surface ion traps with integrated copper current carrying wires embedded inside the substrate below the ion trap electrodes, capable of generating high magnetic field gradients. The copper layer's measured sheet resistance of 1.12 mΩ/sq at room temperature is sufficiently low to incorporate complex designs, without excessive power dissipation at high currents causing a thermal runaway. At a temperature of 40 K the sheet resistance drops to 20.9 μΩ/sq giving a lower limit for the residual resistance ratio of 100. Continuous currents of 13 A can be applied, resulting in a simulated magnetic field gradient of 144 T/m at the ion position, which is 125 μm from the trap surface for the particular anti-parallel wire pair in our design.
Microfabricated ion traps are an important tool in the development of scalable quantum systems. Tremendous advancements towards an ion quantum computer were made in the past decade and most requirements for a quantum computer have been fulfilled in individual experiments. Incorporating all essential capabilities in a fully scalable system will require the further advancement of established quantum information technologies and development of new trap fabrication techniques. In my thesis I will discuss the theoretical background and experimental setup required for the operation of ion traps. Measurement of the important ion trap heating rate was performed in the setup and I will discuss the results in more detail. I will give a review of microfabrication processes used for the fabrication of traps, outlining advantages, disadvantages and issues inherent to the processes. Following the review I will present my work on a concept for a scalable ion trap quantum system based on microwave quantum gates and shuttling through X-junctions. Many of the required building blocks, including ion trap structures with current-carrying wires intended to create strong magnetic field gradients for microwave gates were investigated further. A novel fabrication process was developed to combine current-carrying wires with advanced multilayered ion trap structures. Several trap designs intended for proof of principle experiments of high fidelity microwave gates, advanced detection techniques and shuttling between electrically disconnected ion traps will be presented. Also the electrode geometry of an optimized X-junction design with strongly suppressed rf barrier height will be presented. Further, I developed several modifications for the experimental setup to extend the existing capabilities. A plasma source capable of performing in-situ cleans of the trap electrode surfaces, which has been demonstrated to dramatically reduce the heating rate in ion traps, was incorporated. I will also present a vacuum system modification designed to cool ion traps with current-carrying wires and transport the generated heat out of the vacuum system. In addition a novel low-noise, high-speed, multichannel voltage control system was developed by me. The device can be used in future experiments to precisely shuttle ions from one trapping zone to another and also to shuttle ions through ion trap junctions. Lastly I will outline the process optimization and microfabrication of my ion trap designs. A novel fabrication process which makes use of the extremely high thermal conductivity of diamond substrates and combines it with thick copper tracks embedded in the substrate was developed. Large currents will be passed through the wires creating a strong and controllable magnetic field gradient. Ion trap designs with isolated electrodes connected via buried wires can be placed on top of the current-carrying wires, allowing the most advanced electrode designs to be fabricated with current-carrying wires.
This thesis describes experimental work towards the development of a trapped-ion quantum computer based on microchip ion traps and long-wavelength radiation, using magnetic field gradients. The relationship between experimental parameters and two-qubit gate fidelity is investigated for microchips with two different static magnetic field gradient generation methods. For current-carrying wires and under-chip permanent magnets, optimum ion heights of 110 μm and 200 μm are found respectively. Construction of an experiment capable of demonstrating high-fidelity gates is reported, including innovations for the use of microchip ion traps with permanent magnets. The development of a vacuum system for versatile microchip experiments is described, including new methods for impedance-matched RF delivery, in-vacuum filtering and liquid nitrogen microchip cooling. Protection of both the microchip surface from atomic flux and of ions from the charged imaging viewport are both investigated in detail. A new preparation framework for microchip ion traps before their use in experiments is developed. In order to remove unwanted deposited layers on the microchips, a process of multiple chemical treatments is used. In addition, these characterisation efforts lead to refinement of the microfabrication process for future microchips. The application of large currents to microchips is of fundamental importance to scalable trapped-ion quantum computing using static magnetic field gradients. As part of the characterisation process, currents of ≈ 10A are successfully applied to microfabricated current-carrying wires, demonstrating the viability of these structures for generation of local magnetic fields and gradients in a quantum computing device. The operation of a microchip ion trap experiment with under-chip permanent magnets for a high magnetic field gradient (≈ 140Tm−1) is described. The successful trapping of ytterbium-174 and -171 ions is reported, as well as their use to measure and optimise the ion trap parameters. The thesis concludes with consideration of the expected future results from the ongoing operation of the experiment.
In modern ion quantum technology the fields of quantum information and microfabrication are being merged to build devices in which ions are confined near trap electrodes at the micrometer scale -with novel functionality where ion qubits enabling quantum devices. A long term goal in this field is to build a trapped-ion based quantum computer. Today’s quest, however, requires a progressive ion trap development in which materials selection, trap’s design and fabrication methods play a fundamental role. Here, we report on two fabrication methods for planar traps. We present the characterization of a planar trap with integrated electromagnets which is designed to coherently manipulate 40Ca+ ions’ internal states via magnetic field gradients and long-wavelength radiation. By implementing radiofrequency spectroscopy, in the presence of static magnetic fields, and by moving a single 40Ca+ ion about 600 µm along the trap axis we measured the total static magnetic field which yields a gradient of 1.11 +/- 0.18 T/m*A in this direction. We anticipate in this trap magnetic gradients of 10 T/m*A perpendicular to the trap axis. A second generation of this trap, a novel hybrid planar trap, is built by combining the capabilities of thick film technology and laser-induced glass micromachining to structure independent current-carrying wires beneath an ion trap. Into the vacuum chamber, we also incorporate surface cleaning tools such as ion-beam bombardment to diminish possible adsorbed contaminants which may reflect in excessive ion heating rates. Based on numerical simulations, we predict that the wires underneath the ion trap, although far from trap center, will be capable of producing high magnetic field gradients of about 3 T/m*A. Already such robust fields will allow to investigate strong v_ss=30 kHz spin-spin interactions in 40Ca+ ion crystals in planar traps.
In the current landscape of quantum technologies, great efforts are being made to overcome the technical challenges of realising robust and scalable devices for use in a wide variety of potentially impactful applications. This thesis therefore describes the design considerations and assembly of a purpose-built vacuum system for the realisation of high-fidelity quantum logic operations on a microfabricated surface ion trap device. The device consists of an X-junction structure with embedded current-carrying wires, which will allow for the demonstration of scalable, laser-free, magnetic field gradient-based quantum logic. Initial characterisation experiments and observations pertaining to this novel microchip design are presented, as well as demonstrations of coherent quantum operations using the 171Yb+ qubit both with and without the current-carrying wire generated magnetic field gradient. In addition, this work also shows how this static magnetic field gradient design for scalable quantum computing may be leveraged for use in metrology. By utilising the inherent gradient-induced coupling of the trapped ion qubit’s transition frequency to it’s position in this architecture, the ion becomes extremely sensitive to electric field perturbations, enabling the implementation of many well-established quantum electric and magnetic field sensing techniques. Furthermore, the nature of this novel sensing scheme permits high sensitivities within the unique DC − kHz bandwidth, which many current quantum electrometers are unable to reach. Measurements of DC and AC electric fields yield unprecedented sensitivities for the sensing of phase coherent electric fields in a linear Paul trap. In addition, an implementation of a common magnetometry technique to measure electric field noise is also exhibited. Finally, it is shown that a purpose built system for the implementation of this scheme has the potential to improve sensitivities by up to six orders of magnitude, enabling the possibility of utilising this scheme for a wide variety of applications'
For quantum computers to become a reality, high-fidelity logic gates are required to be implemented on a scalable architecture. The IQT group follows an approach based on using a magnetic field gradient and microwave radiation to implement the required operations. To demonstrate their scalability to many quantum bit systems, these operations need to be implemented on micro-fabricated surface ion traps. In this thesis I describe the technologies I developed for surface ion traps with magnetic field gradients. This entailed the design, assembly and operation of two surface ion trap systems with permanent magnets for generating large magnetic field gradients of 140T=m, novel in-vacuum radio-frequency and microwave emitters for implementing high-speed quantum state manipulation and development of robust and reliable laser control systems required for stable long-term experimental operation.