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Reduced photothermal heating in diamonds enriched with H3 point defects

Chaman Gupta, Anupum Pant, Xiaojing Xia, Greg Felsted, Katharina Senkalla, Scott T. Dunham, Fedor Jelezko, Peter J. Pauzauskie

Published Mar 9, 2022• 0 citations
Publisher

Abstract

The H3 center in diamond has been shown to exhibit several promising characteristics for laser cooling applications including a neutral charge state, high radiative quantum yield, and efficient anti-Stokes photoluminescence. In this work, we show that upon excitation with a 532 nm laser, bulk diamond crystals doped with H3 centers emit efficient up-conversion photoluminescence and also show significantly reduced photothermal heating relative to crystals doped with NV centers. These results encourage future exploration of techniques for H3 enrichment in diamonds at high-pressure, high-temperature conditions for the simultaneous anti-Stokes fluorescence cooling and radiation balanced lasing in semiconductor materials.

DOI
10.1117/12.2610033

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Journal of Experimental and Theoretical Physics Letters•Feb 1, 2024•4 citations
The H3 center in diamond has been shown to exhibit several promising characteristics for laser cooling applications including a neutral charge state, high radiative quantum yield, and efficient anti-Stokes photoluminescence. In this work, we show that upon excitation with a 532 nm laser, bulk diamond crystals doped with H3 centers emit efficient up-conversion photoluminescence and also show significantly reduced photothermal heating relative to crystals doped with NV centers. These results encourage future exploration of techniques for H3 enrichment in diamonds at high-pressure, high-temperature conditions for the simultaneous anti-Stokes fluorescence cooling and radiation balanced lasing in semiconductor materials.
Phonon-assisted anti-Stokes photoluminescence (ASPL) up-conversion lies at the heart of optical refrigeration in solids. The thermal energy contained in the lattice vibrations is taken away by the emitted anti-Stokes photons' ASPL process, resulting in laser cooling of solids. To date, net laser cooling of solids is limited in rare-earth (RE)-doped crystals, glasses, and direct band gap semiconductors. Searching more solid materials with efficient phonon-assisted photoluminescence up-conversion is important to enrich optical refrigeration research. Here, we demonstrate the phonon-assisted PL up-conversion process from the silicon vacancy (SiV) center in diamond for the first time by studying ASPL spectra for the dependence of temperature, laser power, and excitation energy. Although net cooling has not been observed, our results show that net laser cooling might be eventually achieved in diamond by improving the external quantum efficiency to higher than 95%. Our work provides a promising route to investigate the laser cooling effect in diamond.
Anti-Stokes optical cooling in diamond nitrogen-vacancy (NV) centers is investigated using photoluminescence (PL) spectroscopy, time-resolved measurements, and rate-equation modeling. Under excitation below the zero-phonon line, anti-Stokes emission from the negatively charged NV- state appears, but optical excitation also induces charge-state conversion between NV- and neutral NV0. Excitation-dependent PL dynamics reveal a reduction of the NV- population under strong excitation. A minimal rate-equation model constrained by nanosecond and millisecond PL measurements predicts that photoionization suppresses the NV--mediated cooling contribution and leads to self-limiting cooling behavior. The calculations further show that net cooling requires exceptionally high quantum efficiency and does not increase monotonically with excitation density. These results highlight photoinduced charge-state conversion as a key photophysical bottleneck for defect-based anti-Stokes optical cooling.
Anti-Stokes optical cooling in diamond nitrogen-vacancy (NV) centers is experimentally and numerically investigated. Photoluminescence-excitation spectroscopy reveals pronounced phonon-assisted anti-Stokes emission under excitation below the zero-phonon line (ZPL). However, the below-ZPL excitation drives photoinduced charge-state conversion between negatively-charged NV- and neutral NV0, thereby suppressing the NV- mediated cooling channel. Time-resolved photoluminescence (PL) measurements reveal an increase in the effective PL lifetime with excitation density, reflecting an increasing NV0 contribution. By fitting nanosecond and millisecond PL dynamics with a minimal rate-equation model, we extract effective optical pumping and charge-conversion rates, which enables us to quantitatively simulate the cooling performance. The simulations predict a self-limiting behavior of anti-Stokes cooling and clarify the excitation conditions under which net cooling can be sustained within this effective model. The estimated cooling power per NV center is comparable, on a microscopic basis, to values discussed for semiconductor quantum dots and rare-earth optical coolers. These results identify charge-state conversion as a key bottleneck for defect-based optical refrigeration.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
The photoluminescence spectra of the dominant H3 and H4 centers in a natural diamond sample, which is preliminarily characterized by optical and infrared spectrophotometry, are excited by femtosecond laser pulses with a wavelength of 470 nm and varying intensity. Saturation of the photoluminescence intensity of the H3 and H4 centers normalized by the intensity of laser radiation is observed and attributed to the saturation of the resonance transition responsible for the excitation. This makes it possible for the first time to estimate the absorption cross sections of H3 and H4 centers, which can be compared with values known from the literature and those determined from photoluminescence kinetics. The total concentration of H3 and H4 centers can then be found. Taking into account the known absorption coefficient of the sample at a wavelength of 470 nm and the previously established ratio of the contributions from H3 and H4 centers, their concentrations have been estimated separately for the first time.