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Symposium Latsis on Diamond Photonics - Physics, Technologies and Applications

Phonon assisted photoluminescence up-conversion of in diamond color centers

Jun Zhang, Yuanfei Gao, Yujia Sun

Published Jan 1, 2019• 0 citations
Publisher

Abstract

Phonon assisted anti-Stokes photoluminescence (ASPL) up-conversion plays an important role in laser cooling of lattice phonon and controlling of electron and phonon states in solids. Here, we will introduce the phonon-assisted PL up-conversion process from nitrogen vacancy (NV) and silicon vacancy (SiV) center in diamond.
DOI
10.1364/dp.2019.9

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Phonon-assisted anti-Stokes photoluminescence (ASPL) up-conversion lies at the heart of optical refrigeration in solids. The thermal energy contained in the lattice vibrations is taken away by the emitted anti-Stokes photons' ASPL process, resulting in laser cooling of solids. To date, net laser cooling of solids is limited in rare-earth (RE)-doped crystals, glasses, and direct band gap semiconductors. Searching more solid materials with efficient phonon-assisted photoluminescence up-conversion is important to enrich optical refrigeration research. Here, we demonstrate the phonon-assisted PL up-conversion process from the silicon vacancy (SiV) center in diamond for the first time by studying ASPL spectra for the dependence of temperature, laser power, and excitation energy. Although net cooling has not been observed, our results show that net laser cooling might be eventually achieved in diamond by improving the external quantum efficiency to higher than 95%. Our work provides a promising route to investigate the laser cooling effect in diamond.
Anti-Stokes optical cooling in diamond nitrogen-vacancy (NV) centers is investigated using photoluminescence (PL) spectroscopy, time-resolved measurements, and rate-equation modeling. Under excitation below the zero-phonon line, anti-Stokes emission from the negatively charged NV- state appears, but optical excitation also induces charge-state conversion between NV- and neutral NV0. Excitation-dependent PL dynamics reveal a reduction of the NV- population under strong excitation. A minimal rate-equation model constrained by nanosecond and millisecond PL measurements predicts that photoionization suppresses the NV--mediated cooling contribution and leads to self-limiting cooling behavior. The calculations further show that net cooling requires exceptionally high quantum efficiency and does not increase monotonically with excitation density. These results highlight photoinduced charge-state conversion as a key photophysical bottleneck for defect-based anti-Stokes optical cooling.
The manipulation of the charge states of nitrogen-vacancy (NV) centers in diamond is a prerequisite for next-generation quantum sensing, communication, and computing. Here, we use phonon-assisted anti-Stokes excitation to realize the reversible conversion between the NV 0 and NV – states. In this case, we observe two decay processes of NV – centers with lifetimes as long as tens of seconds. By studying the kinetics of spectral structure evolution of NV – states, we find that the spectral structure of the NV – center is modulated by the charge state transition process under anti-Stokes excitation. We propose that the main reason is the local electric field generated by the ionization of the NV –, which changes the radiation environment of the color centers. Our results might provide an alternative method to control the charge states of nitrogen-vacancy centers.
The nitrogen-vacancy (NV) centre in diamond is a leading platform for room-temperature quantum sensing. Improvements in sensitivity require precise control of the NV charge state. Transitions from the neutral NV0^00 charge state to the negative NV−^-− charge state can occur during excitation with photon energies below the ZPL transition of NV0^00. These sub-resonant charge transitions limit modern initialisation protocols and have not been studied in full detail. In this paper we show that sub-resonant charge cycling arises from phonon-assisted anti-Stokes excitation. We further uncover the phonon states which contribute most strongly to the anti-Stokes transition via the development of novel quantitative models. The models indicate that low energy acoustic phonons strongly contribute to the transition close to the ZPL. At longer wavelengths a 43\,meV mode additionally impacts the charge cycling dynamics.
Anti-Stokes optical cooling in diamond nitrogen-vacancy (NV) centers is experimentally and numerically investigated. Photoluminescence-excitation spectroscopy reveals pronounced phonon-assisted anti-Stokes emission under excitation below the zero-phonon line (ZPL). However, the below-ZPL excitation drives photoinduced charge-state conversion between negatively-charged NV- and neutral NV0, thereby suppressing the NV- mediated cooling channel. Time-resolved photoluminescence (PL) measurements reveal an increase in the effective PL lifetime with excitation density, reflecting an increasing NV0 contribution. By fitting nanosecond and millisecond PL dynamics with a minimal rate-equation model, we extract effective optical pumping and charge-conversion rates, which enables us to quantitatively simulate the cooling performance. The simulations predict a self-limiting behavior of anti-Stokes cooling and clarify the excitation conditions under which net cooling can be sustained within this effective model. The estimated cooling power per NV center is comparable, on a microscopic basis, to values discussed for semiconductor quantum dots and rare-earth optical coolers. These results identify charge-state conversion as a key bottleneck for defect-based optical refrigeration.
Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a function of temperature starting from ambient conditions up to about 100∘^\circ∘ Celsius, focusing on the zero-phonon line (ZPL). We find that the wavelength and width of the ZPL of the two color centers exhibit a comparable dependence on temperature, despite the strong difference in the photoluminescence spectra. Moreover, the temperature sensitivity of the ZPL of the silicon-vacancy center is not significantly affected by phosphorus-doping, as we infer by comparison with silicon-vacancy centers in electronic-grade single-crystal diamond.