Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Photonic and Phononic Properties of Engineered Nanostructures

Optical interfacing of tin-vacancy spin qubits in diamond

Philipp Fuchs, Johannes Görlitz, Robert Morsch-Golsong, Dennis Herrmann, Christoph Becher

Published Mar 4, 2022• 0 citations
Publisher

Abstract

Color centers in diamond, specifically the group-IV-vacancy centers, have emerged as promising candidates among solid state qubits. Among these, the tin-vacancy (SnV) center features the optimum combination of long spin coherence time and favorable optical properties. We here investigate the generation of indistinguishable single photons from SnV centers and explore the influence of residual spectral diffusion. To improve the photon collection efficiency we fabricate a planar optical antenna based on two silver mirrors coated on a thin (sub-µm) single crystal diamond membrane. We demonstrate its operation at room and cryogenic temperatures and strong enhancement of the collectible photon rate.

DOI
10.1117/12.2615298

Related papers

A cavity-based optical antenna for color centers in diamond

Philipp Fuchs, Thomas Jung, Michael Kieschnick +2 more

An efficient atom–photon interface is a key requirement for the integration of solid-state emitters, such as color centers in diamond, into quantum technology applications. As other solid-state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mirrors coated on a thin single crystal diamond membrane, forming a planar Fabry–Pérot cavity that improves the photon extraction from single tin vacancy (SnV) centers and their coupling to an excitation laser. Upon numerical optimization of the structure, we find theoretical enhancements in the collectible photon rate by a factor of 60 as compared to the bulk case. As a proof-of-principle demonstration, we fabricate single crystal diamond membranes with sub-μm thickness and create SnV centers by ion implantation. Employing off-resonant excitation, we show a sixfold enhancement of the collectible photon rate, yielding up to half a million photons per second from a single SnV center. At the same time, we observe a significant reduction of the required excitation power in accordance with theory, demonstrating the functionality of the cavity as an optical antenna. Due to its planar design, the antenna simultaneously provides similar enhancements for a large number of emitters inside the membrane. Furthermore, the monolithic structure provides high mechanical stability and straightforwardly enables operation under cryogenic conditions as required in most spin–photon interface implementations.

arXiv:2105.10249•APL Photonics•Aug 1, 2021•20 citations

A nanophotonic interface for tin-vacancy spin qubits in diamond

Shahriar Aghaeimeibodi, Alison E. Rugar, Daniel Riedel +8 more

Building quantum networks requires efficient coupling of solid-state quantum emitters to photonic devices. Tinvacancy center (SnV) has attracted much interest for having long spin coherence times at temperatures above 1 K. Employing SnV as an optically addressable qubit requires integration with photonic structures to both route the emitted photons and enhance the light-matter interaction. We present incorporation of high-quality SnV centers with narrow linewidths in suspended diamond waveguides. Furthermore, we fabricate photonic crystal cavities in diamond with embedded SnV centers. We observe strong intensity enhancement of the photon emission when the cavity is resonant with the color center. Time-resolved photoluminescence measurements confirm that this effect is due to radiative Purcell enhancement of the spontaneous emission. Finally, we demonstrate Stark tuning of transition frequency of SnV centers, essential for multiemitter applications. These results are a significant step toward color-center-based quantum information processing applications without the need for dilution refrigerators.

Quantum Nanophotonic Materials, Devices, and Systems•Jul 30, 2021•1 citation

Purcell enhancement of tin-vacancy centers in diamond

Daniel Riedel, Alison E. Rugar, Shahriar Aghaeimeibodi +6 more

Quantum networks rely on the efficient coupling of coherent quantum memories to photonic links. Tin-vacancy centers (SnV) have emerged as promising candidates for the implementation of an optically interfaced quantum memory based on their long spin coherence times at temperatures above 1K. To enhance their interaction with photons SnV centers need to be integrated with high-quality photonic structures. In this work, we report the enhancement of coherent emission of SnV centers by coupling them to a nanophotonic waveguide resonator. We observe strong intensity enhancement of the photon emission when the cavity is resonant with the color center. We demonstrate strong enhancement of the radiative recombination rate of SnV centers resulting in their predominant emission via the coherent zero-phonon line and into the cavity mode. These results are a significant step toward color-center-based quantum information processing applications without the need for dilution refrigerators.

Quantum Computing, Communication, and Simulation•Mar 9, 2022•0 citations

Quantum Photonic Interface for Tin-Vacancy Centers in Diamond

Alison E. Rugar, Shahriar Aghaeimeibodi, Daniel Riedel +6 more

The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV$^{\,\textrm{-}}$) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV$^{\,\textrm{-}}$ centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV$^{\,\textrm{-}}$ centers in diamond. We integrate SnV$^{\,\textrm{-}}$ centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons ($90\%$) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV$^{\,\textrm{-}}$ centers in diamond.

arXiv:2102.11852•Physical Review X•Jul 26, 2021•103 citations

Single tin-vacancy center in nanoscale diamond

Masanori Fujiwara, Masanao Ohori, Frederick T.-K. So +6 more

Group-IV color centers in diamonds are promising not only as spin-photon interfaces for quantum networks but also as multicolor photoluminescence probes and all-optical temperature sensors for biological research. Therefore, generating group-IV color centers in detonation nanodiamonds (DNDs), the smallest class of diamond nanocrystals, has become a research focal point. This approach holds potential for the noninvasive introduction of diamond sensors into living cell organelles, enabling sensing of local structural and temperature changes with minimal disturbance. Following the successful generation of silicon- and germanium-vacancy centers in DNDs, the generation of tin-vacancy (SnV) centers was investigated. Similar to other group-IV color centers, the SnV centers exhibit strong photoluminescence. In addition, the SnV center offers a long spin coherence time compared with those of silicon- and germanium-vacancy centers. However, the strain induced by large Sn atoms poses substantial challenges for generating SnV centers in ultrasmall nanodiamonds. In this study, Sn-doped DNDs with a mean particle size of ~ 5 nm were subjected to a 3 days boiling acid treatment, which led to sharp zero-phonon lines of SnV centers at ~ 620 nm in the photoluminescence spectra. Photon autocorrelation measurements further revealed the presence of single SnV centers in these DNDs.

Discover Nano•May 14, 2025•8 citations

Tin-Vacancy Centers in Diamond for Quantum Network

Takayuki Iwasaki

Quantum emitters in diamond are a promising candidate for quantum network applications. Here, we show basic properties of tin-vacancy (SnV) centers in diamond, which we recently discovered. The SnV center shows a sharp zero phonon line and a high fluorescence intensity. The SnV center has a possibility to have a long spin coherence time in the Kelvin temperature range, in contrast to other group-IV color centers, i.e. silicon-vacancy and germanium-vacancy centers. We discuss important experiments regarding spin and optical properties of the SnV quantum emitter for further development towards quantum network.

The Review of Laser Engineering•Jan 1, 2021•0 citations
Color centers in diamond, specifically the group-IV-vacancy centers, have emerged as promising candidates among solid state qubits. Among these, the tin-vacancy (SnV) center features the optimum combination of long spin coherence time and favorable optical properties. We here investigate the generation of indistinguishable single photons from SnV centers and explore the influence of residual spectral diffusion. To improve the photon collection efficiency we fabricate a planar optical antenna based on two silver mirrors coated on a thin (sub-µm) single crystal diamond membrane. We demonstrate its operation at room and cryogenic temperatures and strong enhancement of the collectible photon rate.
An efficient atom–photon interface is a key requirement for the integration of solid-state emitters, such as color centers in diamond, into quantum technology applications. As other solid-state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mirrors coated on a thin single crystal diamond membrane, forming a planar Fabry–Pérot cavity that improves the photon extraction from single tin vacancy (SnV) centers and their coupling to an excitation laser. Upon numerical optimization of the structure, we find theoretical enhancements in the collectible photon rate by a factor of 60 as compared to the bulk case. As a proof-of-principle demonstration, we fabricate single crystal diamond membranes with sub-μm thickness and create SnV centers by ion implantation. Employing off-resonant excitation, we show a sixfold enhancement of the collectible photon rate, yielding up to half a million photons per second from a single SnV center. At the same time, we observe a significant reduction of the required excitation power in accordance with theory, demonstrating the functionality of the cavity as an optical antenna. Due to its planar design, the antenna simultaneously provides similar enhancements for a large number of emitters inside the membrane. Furthermore, the monolithic structure provides high mechanical stability and straightforwardly enables operation under cryogenic conditions as required in most spin–photon interface implementations.
Building quantum networks requires efficient coupling of solid-state quantum emitters to photonic devices. Tinvacancy center (SnV) has attracted much interest for having long spin coherence times at temperatures above 1 K. Employing SnV as an optically addressable qubit requires integration with photonic structures to both route the emitted photons and enhance the light-matter interaction. We present incorporation of high-quality SnV centers with narrow linewidths in suspended diamond waveguides. Furthermore, we fabricate photonic crystal cavities in diamond with embedded SnV centers. We observe strong intensity enhancement of the photon emission when the cavity is resonant with the color center. Time-resolved photoluminescence measurements confirm that this effect is due to radiative Purcell enhancement of the spontaneous emission. Finally, we demonstrate Stark tuning of transition frequency of SnV centers, essential for multiemitter applications. These results are a significant step toward color-center-based quantum information processing applications without the need for dilution refrigerators.
Quantum networks rely on the efficient coupling of coherent quantum memories to photonic links. Tin-vacancy centers (SnV) have emerged as promising candidates for the implementation of an optically interfaced quantum memory based on their long spin coherence times at temperatures above 1K. To enhance their interaction with photons SnV centers need to be integrated with high-quality photonic structures. In this work, we report the enhancement of coherent emission of SnV centers by coupling them to a nanophotonic waveguide resonator. We observe strong intensity enhancement of the photon emission when the cavity is resonant with the color center. We demonstrate strong enhancement of the radiative recombination rate of SnV centers resulting in their predominant emission via the coherent zero-phonon line and into the cavity mode. These results are a significant step toward color-center-based quantum information processing applications without the need for dilution refrigerators.
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV -^{\,\textrm{-}}-) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV -^{\,\textrm{-}}- centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV -^{\,\textrm{-}}- centers in diamond. We integrate SnV -^{\,\textrm{-}}- centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons (90%90\%90%) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV -^{\,\textrm{-}}- centers in diamond.
Group-IV color centers in diamonds are promising not only as spin-photon interfaces for quantum networks but also as multicolor photoluminescence probes and all-optical temperature sensors for biological research. Therefore, generating group-IV color centers in detonation nanodiamonds (DNDs), the smallest class of diamond nanocrystals, has become a research focal point. This approach holds potential for the noninvasive introduction of diamond sensors into living cell organelles, enabling sensing of local structural and temperature changes with minimal disturbance. Following the successful generation of silicon- and germanium-vacancy centers in DNDs, the generation of tin-vacancy (SnV) centers was investigated. Similar to other group-IV color centers, the SnV centers exhibit strong photoluminescence. In addition, the SnV center offers a long spin coherence time compared with those of silicon- and germanium-vacancy centers. However, the strain induced by large Sn atoms poses substantial challenges for generating SnV centers in ultrasmall nanodiamonds. In this study, Sn-doped DNDs with a mean particle size of ~ 5 nm were subjected to a 3 days boiling acid treatment, which led to sharp zero-phonon lines of SnV centers at ~ 620 nm in the photoluminescence spectra. Photon autocorrelation measurements further revealed the presence of single SnV centers in these DNDs.
Quantum emitters in diamond are a promising candidate for quantum network applications. Here, we show basic properties of tin-vacancy (SnV) centers in diamond, which we recently discovered. The SnV center shows a sharp zero phonon line and a high fluorescence intensity. The SnV center has a possibility to have a long spin coherence time in the Kelvin temperature range, in contrast to other group-IV color centers, i.e. silicon-vacancy and germanium-vacancy centers. We discuss important experiments regarding spin and optical properties of the SnV quantum emitter for further development towards quantum network.