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On-chip silicon-organic hybrid entangled photon pair source

Jinzhao Wang, Yang Wang, Jiewen Li, Rui Li, Feng Yang, Yanmei Li, Jiaxin Chen, Wanxin Li, Yunxu Sun, Yong Sheng Yao, Tsuyoshi Michinobu, Xiaochuan Xu

Published Feb 17, 2022• 1 citation
Publisher

Abstract

We propose to leverage a silicon-organic hybrid integration structure to implement an integrated entangled photon pair source with high photon pair generation rate. This method combines the weak nonlinear absorption of organic materials with the high light confinement of silicon waveguides. Due to the supression of TPA and FCA, the pump power saturation threshold of the hybrid waveguide can be greatly increased. Therefore, with the high nonlinear coefficient and strong pump power, this hybrid integrated structure can achieve high photon pair generation rate. This work shows that silicon-organic hybrid integration could be a competitive platfrom for quantum photonic circuits.

DOI
10.1117/12.2613582

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We propose to leverage a silicon-organic hybrid integration structure to implement an integrated entangled photon pair source with high photon pair generation rate. This method combines the weak nonlinear absorption of organic materials with the high light confinement of silicon waveguides. Due to the supression of TPA and FCA, the pump power saturation threshold of the hybrid waveguide can be greatly increased. Therefore, with the high nonlinear coefficient and strong pump power, this hybrid integrated structure can achieve high photon pair generation rate. This work shows that silicon-organic hybrid integration could be a competitive platfrom for quantum photonic circuits.
Hybrid photonic devices, harnessing the advantages of multiple materials while mitigating their respective weaknesses, represent a promising solution to the effective on-chip integration of generation and manipulation of non-classical states of light encoding quantum information. We demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and compliance with electrical pumping of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al-GaAs source and their subsequent routing to a silicon-on-insulator circuitry. This enables the on-chip generation of broadband telecom photon pairs by type 0 and type 2 SPDC from the hybrid device, at room temperature and with strong rejection of the pump beam. Two-photon interference with 92% visibility proves the high energy-time entanglement quality characterizing the produced quantum state, thereby enabling a wide range of quantum information applications.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and direct bandgap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an AlGaAs source and their vertical routing to an adhesively-bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband (> 40 nm) telecom photons by type 0 and type 2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10510^5105 s−1s^{-1}s−1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5 nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on-chip, within an hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/silicon quantum photonic device combining the strong second-order nonlinearity and direct band gap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al Ga As source and their vertical routing to an adhesively bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband ( > 40 nm) telecom photons by type-0 and type-2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10 5 s − 1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5-nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on chip, within a hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies. Published by the American Physical Society 2024
Abstract Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon‐pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on‐chip quantum buffer realized using the slow‐light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon‐based photon‐pair source and a silica‐based arrayed waveguide grating is also presented.
Hybrid photonic devices represent a promising solution to the effective on-chip integration of all the components required for the generation, manipulation and detection of non-classical states of light encoding quantum information. We present an AlGaAs source of highly entangled photon pairs envisioned for the hybridization with silicon-on-insulator integrated platforms, in order to take benefit from the strong second order nonlinearity and the compliance with electrical pumping of the III-V platform and the maturity and CMOS compatibility of silicon photonic circuitry, enabling a wide variety of quantum information applications.
Entangled photon-pair sources are essential components for emerging quantum information-processing technologies. Among various platforms, on-chip microresonators offer strong potential due to their resonant enhancement and suitability for wafer-scale integration. In this study, we demonstrate ultrabright entangled photon-pair generation from high- Q silicon microring resonators. By optimizing the device geometry and coupling configuration to suppress sidewall scattering and selectively excite the fundamental mode, we achieve single-mode resonance with an intrinsic Q -factor of 1.26 × 10 6 using only standard fabrication processes available in CMOS foundries. The resulting high- Q resonator yields a record-high brightness coefficient of 3.9 × 10 9 Hz/GHz/mW 2 . At an on-chip pump power of 240 μW, we obtain a maximum brightness of 22.0 MHz/GHz and a maximum photon-pair generation rate of 9.19 MHz. At a low-pump power of 10 μW, Franson-type two-photon interference exhibits a visibility of 98.0 ± 0.2%, confirming high-quality time–energy entanglement. These results show that narrow bandwidth and high generation rate can be achieved simultaneously in CMOS-compatible silicon photonic sources, thereby advancing their use in quantum repeaters and scalable quantum networks.