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Physica Scripta

Optical properties of 87 Rb atomic vapor near the 1D photonic crystal bandgap and all-optical switching of transmitted light

Jalil Shiri, Javad Khalilzadeh, Seyyed Hossein Asadpour

Published Feb 1, 2022• 5 citations
Publisher

Abstract

Abstract We investigate the steady-state and dynamic behavior of the optical properties of the laser pulse in a GaAs/AlAs 1D photonic crystal (1DPC) with an atomic vapor defect layer. We chose the atomic vapor of the 87 Rb as a defect layer by driving the probe field on the D 2 transition between 5 2 P 3/2 - 5 2 S 1/2 levels through the 1DPC. The effect of the photonic bandgap (PBG) on the absorption and dispersion properties of the probe field is discussed. Moreover, the transmission and reflection coefficient of the 1DPC is controlled by applying the various value of the intensity of the coupling field. By comparing these results in the vacuum and near the PBG, we find that the absorption/dispersion and transmission/reflection properties are strongly affected by the PBG. We find that all-optical properties of atomic vapor in the surrounding of 1DPC are improved due to PBG. Furthermore, the effect of the intensity of the coupling field on the all-optical switching is studded. The proposed model may provide some new possibilities for technological applications as an all-optical device based on the photonic crystal in quantum information science, quantum computing, signal processing, and quantum communications.

DOI
10.1088/1402-4896/ac50c6

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Abstract We investigate the steady-state and dynamic behavior of the optical properties of the laser pulse in a GaAs/AlAs 1D photonic crystal (1DPC) with an atomic vapor defect layer. We chose the atomic vapor of the 87 Rb as a defect layer by driving the probe field on the D 2 transition between 5 2 P 3/2 - 5 2 S 1/2 levels through the 1DPC. The effect of the photonic bandgap (PBG) on the absorption and dispersion properties of the probe field is discussed. Moreover, the transmission and reflection coefficient of the 1DPC is controlled by applying the various value of the intensity of the coupling field. By comparing these results in the vacuum and near the PBG, we find that the absorption/dispersion and transmission/reflection properties are strongly affected by the PBG. We find that all-optical properties of atomic vapor in the surrounding of 1DPC are improved due to PBG. Furthermore, the effect of the intensity of the coupling field on the all-optical switching is studded. The proposed model may provide some new possibilities for technological applications as an all-optical device based on the photonic crystal in quantum information science, quantum computing, signal processing, and quantum communications.
Abstract The present study aimed to evaluate the optical properties of 1D photonic crystal (PC) with a defect layer doped by four-level InGaN/GaN quantum dots. Transient and steady-state behavior of the medium completely relies on the intensities and relative phases of coherent coupling fields. In addition, the transient absorption–dispersion spectra of 1DPC can be easily adjusted by choosing the controllable parameters properly. Furthermore, the transmitted and reflected light pulses at λ = 1.55 μ m (long wavelength) can be tuned by controlling the Rabi frequencies of applied light due to their potential applications in all-optical systems. Furthermore, the effect of relative phase between applied fields on the light propagation was evaluated through the medium. In addition, all-optical switching time was found for subluminal/superluminal and absorption/transmission of light propagation. The required switching time ranges between 2–7 ps. The proposed model may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science and systems due to large applications in signal processing.
We describe all-optical transistor action in photonic bandgap (PBG) materials doped with active atoms and analyse the advantages of this system over other all-optical transistor proposals. In the presence of a PBG material, a coherent laser beam with the frequency slightly detuned from the resonant atomic transition frequency can drive a collection of two-level atoms to an almost totally inverted state, a phenomenon strictly forbidden in ordinary vacuum. By varying the laser field intensity in the neighbourhood of a threshold value, it is possible to drive the atomic system through a transition from states in which the atoms populate preferentially the ground level to almost totally inverted states. In this process, the atomic system switches from a passive medium (highly absorptive) to a active medium (highly amplifying). The large differential gain exhibited by the atomic medium is very robust with respect to nonradiative relaxation and dephasing mechanisms. The switching action in a PBG material is not associated with operation near a narrow cavity resonance with conventional trade-off between switching time and switching threshold intensity. Rather it is associated with an abrupt discontinuity in the engineered broad-band electromagnetic density of states of the PBG material. We demonstrate all-optical transistor action in PBG materials by analysing the absorption spectrum of a second probe laser beam and we show that the probe beam experiences a substantial differential gain by slight intensity modulations in the control laser field. Under certain conditions, the fluctuations in the number of totally inverted atoms that contribute to the amplification process are strongly diminished (the statistics of the excited atoms becomes sub-Poissonian), which, in turn, determines a very low-noise regime of amplification.
Abstract The transient and steady-state behavior of the probe absorption and dispersion at 1.55 µ m wavelength through a 1D photonic crystal with a defect layer doped by an InAs/GaAs quintuple quantum dot molecule nanostructure are discussed. We show that the group velocity of a light pulse can be controlled just by controlling the rate of incoherent pumping and interdot tunneling. We also investigate the electro-optical switching time of light propagation from subluminal to superluminal or vice versa. The time required to switch from subluminal to superluminal light propagation is found to be in the range 17–34 ps. Such controllable optical properties in a 1D photonic crystal with a defect layer may provide some new possibilities for technological applications in optoelectronics, solid-state quantum information science and systems dealing with signal processing.
We study the transmission spectra of a one-dimensional photonic crystal with a defect containing a four-level atomic medium that exhibits a greatly enhanced third-order susceptibility while having a vanishing linear susceptibility dependent on the electromagnetically induced transparency. Two ways of controlling the transmission of a photonic crystal are discussed: via absorption, i.e., nonlinear (two-photon) absorption of the probe field enhanced by constructive quantum interference, and via dispersion, which comes down to shifting the resonance frequency of the defect mode for the probe field by varying the refractive index based on the giant Kerr nonlinearity (cross-phase modulation). We demonstrate that such systems enable nonlinear all-optical switching at ultralow intensities of the coupling and switching laser fields.
Abstract In this paper, we have discussed the transmission and reflection properties of the infrared laser pulse propagated through one-dimensional photonic crystal (1DPC) with single layer of graphene nanotrusses. The single layer graphene system interacts with a probe laser field and two coupling lights. We analytically solve the optical susceptibility of the single layer graphene system for adapting the dielectric function of the 1DPC. After that we discuss the transmission and reflection properties of the incident laser pulse on 1DPC by controlling the intensity for the coupling lights and relative phase between applied lights. We have also found that the absorption and population spectrums of the medium can be controlled by the relative phase between applied lights. Our results show that the gain without population inversion can be obtained for the simultaneous slow light propagation in the transmission and reflection pulses. Our results may have potential application in the future of the all-optical devices in quantum technologies.
Abstract In this paper, we examine the transmission of a probe field through a one dimensional photonic crystal (1DPC) when the sixth layer of the crystal is doped with four level atoms. We analyze effects of the external driving field on the passage of weak probe field across the photonic crystal. It is found that for the phase time delay of the probe photons, intensity of the driving field switches the Hartman effect from sub to superluminal character. It is interesting to note that in our model, the superluminal transmission of the probe pulse is accompanied by a negligibly small absorption of the incident beam. It ensures that the probe field does not attenuate while passing through the photonic crystal. A similar switching of the Hartman effect may be obtained by adjusting detuning of the probe field related to the excited states of the four-level doping atoms .