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Laser Physics

Optical bistability in reflection of the laser pulse in a 1D photonic crystal doped with four-level InGaN/GaN quantum dots

Jalil Shiri, Javad Khalilzadeh, Seyyed Hossein Asadpour

Published Feb 1, 2021• 19 citations
Publisher

Abstract

Abstract The present study aimed to evaluate the optical properties of 1D photonic crystal (PC) with a defect layer doped by four-level InGaN/GaN quantum dots. Transient and steady-state behavior of the medium completely relies on the intensities and relative phases of coherent coupling fields. In addition, the transient absorption–dispersion spectra of 1DPC can be easily adjusted by choosing the controllable parameters properly. Furthermore, the transmitted and reflected light pulses at λ = 1.55 μ m (long wavelength) can be tuned by controlling the Rabi frequencies of applied light due to their potential applications in all-optical systems. Furthermore, the effect of relative phase between applied fields on the light propagation was evaluated through the medium. In addition, all-optical switching time was found for subluminal/superluminal and absorption/transmission of light propagation. The required switching time ranges between 2–7 ps. The proposed model may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science and systems due to large applications in signal processing.

DOI
10.1088/1555-6611/abd8cb

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Communications in Theoretical Physics•Nov 1, 2018•4 citations
Abstract The present study aimed to evaluate the optical properties of 1D photonic crystal (PC) with a defect layer doped by four-level InGaN/GaN quantum dots. Transient and steady-state behavior of the medium completely relies on the intensities and relative phases of coherent coupling fields. In addition, the transient absorption–dispersion spectra of 1DPC can be easily adjusted by choosing the controllable parameters properly. Furthermore, the transmitted and reflected light pulses at λ = 1.55 μ m (long wavelength) can be tuned by controlling the Rabi frequencies of applied light due to their potential applications in all-optical systems. Furthermore, the effect of relative phase between applied fields on the light propagation was evaluated through the medium. In addition, all-optical switching time was found for subluminal/superluminal and absorption/transmission of light propagation. The required switching time ranges between 2–7 ps. The proposed model may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science and systems due to large applications in signal processing.
Abstract The transient and steady-state behavior of the probe absorption and dispersion at 1.55 µ m wavelength through a 1D photonic crystal with a defect layer doped by an InAs/GaAs quintuple quantum dot molecule nanostructure are discussed. We show that the group velocity of a light pulse can be controlled just by controlling the rate of incoherent pumping and interdot tunneling. We also investigate the electro-optical switching time of light propagation from subluminal to superluminal or vice versa. The time required to switch from subluminal to superluminal light propagation is found to be in the range 17–34 ps. Such controllable optical properties in a 1D photonic crystal with a defect layer may provide some new possibilities for technological applications in optoelectronics, solid-state quantum information science and systems dealing with signal processing.
Abstract We investigate the steady-state and dynamic behavior of the optical properties of the laser pulse in a GaAs/AlAs 1D photonic crystal (1DPC) with an atomic vapor defect layer. We chose the atomic vapor of the 87 Rb as a defect layer by driving the probe field on the D 2 transition between 5 2 P 3/2 - 5 2 S 1/2 levels through the 1DPC. The effect of the photonic bandgap (PBG) on the absorption and dispersion properties of the probe field is discussed. Moreover, the transmission and reflection coefficient of the 1DPC is controlled by applying the various value of the intensity of the coupling field. By comparing these results in the vacuum and near the PBG, we find that the absorption/dispersion and transmission/reflection properties are strongly affected by the PBG. We find that all-optical properties of atomic vapor in the surrounding of 1DPC are improved due to PBG. Furthermore, the effect of the intensity of the coupling field on the all-optical switching is studded. The proposed model may provide some new possibilities for technological applications as an all-optical device based on the photonic crystal in quantum information science, quantum computing, signal processing, and quantum communications.
We discuss the light pulse propagation in a one-dimensional photonic crystal doped by graphene quantum dots in a defect layer. The graphene quantum dots behave as a three-level quantum system and are driven by three coherent laser fields. It is shown that the group velocity of the transmitted and reflected pulses can be switched from subluminal to superluminal light propagation by adjusting the relative phase of the applied fields. Furthermore, it is found that by proper choice of the phase difference between applied fields, the weak probe field amplification is achieved through a one-dimensional photonic crystal. In this way, the result is simultaneous subluminal transmission and reflection.
Abstract In this paper, we have discussed the transmission and reflection properties of the infrared laser pulse propagated through one-dimensional photonic crystal (1DPC) with single layer of graphene nanotrusses. The single layer graphene system interacts with a probe laser field and two coupling lights. We analytically solve the optical susceptibility of the single layer graphene system for adapting the dielectric function of the 1DPC. After that we discuss the transmission and reflection properties of the incident laser pulse on 1DPC by controlling the intensity for the coupling lights and relative phase between applied lights. We have also found that the absorption and population spectrums of the medium can be controlled by the relative phase between applied lights. Our results show that the gain without population inversion can be obtained for the simultaneous slow light propagation in the transmission and reflection pulses. Our results may have potential application in the future of the all-optical devices in quantum technologies.
Tunable phase control of the slow and fast light propagation through a defect slab medium doped by four-level InGaN/GaN quantum dot structure is demonstrated. By solving the Schrödinger and Poisson’s equations self-consistently, a spherical InGaN quantum dot with GaN barrier shell which can interact by terahertz (THz) signal field is designed numerically. It is found that the phase variation of THz signal field imparts the tunability in the group velocity of the transmitted and reflected pulses through a dielectric slab.
Abstract In this paper, we examine the transmission of a probe field through a one dimensional photonic crystal (1DPC) when the sixth layer of the crystal is doped with four level atoms. We analyze effects of the external driving field on the passage of weak probe field across the photonic crystal. It is found that for the phase time delay of the probe photons, intensity of the driving field switches the Hartman effect from sub to superluminal character. It is interesting to note that in our model, the superluminal transmission of the probe pulse is accompanied by a negligibly small absorption of the incident beam. It ensures that the probe field does not attenuate while passing through the photonic crystal. A similar switching of the Hartman effect may be obtained by adjusting detuning of the probe field related to the excited states of the four-level doping atoms .