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Microwave-assisted activation from the zero-voltage state in an intrinsic Josephson junction array

Paul A. Warburton, J. C. Fenton, M Korsah, Crm Grovenor, X.Y. Jin, P. Müller

Published Jan 1, 2006• 0 citations
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Related papers

Dynamical behaviour of intrinsic Josephson junctions

Paul A. Warburton, J. C. Fenton, Sajid Saleem +2 more

Measurements of macroscopic quantum tunnelling (MQT) in intrinsic Josephson junctions (IJJs) suggest that they may be suitable as qubits. An advantage of using IJJs over trilayers is the absence of any artificial barrier and hence the possible absence of decohering two-level fluctuators. A disadvantage is that it is difficult to fabricate single IJJs. Hence all IJJ MQT experiments have been carried out on arrays of many IJJs in series. Since MQT is suppressed by dissipation, it is important (a) to understand the role of dissipation on the dynamics of IJJs and (b) to consider how the dissipation and the dynamics change as a function of the number of junctions in the array which are in the voltage state. We have measured distributions of the nth-order switching current in TlBaCaCuO IJJ arrays, where n indicates switching from n to n+1 junctions being in the voltage state. The junctions show conventional underdamped behaviour at temperatures below some temperature T*, with a suppression of the width of the distribution above T*. We find that T* depends upon n. For n = 0 (i.e. switching from the supercurrent branch), T* is less than 4.2 K. For n > 0, we measured T* values between 20 K and 40 K. Calculations and simulations show that a change in T* results from a change in Q. Analysis suggests that the Q of the IJJs is determined by the environmental impedance when all junctions in the array are in the zero-voltage state, whereas having one junction or more in the voltage state isolates the array from the environment leading to a higher Q. We discuss our data in the context of possible qubit applications.

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Macroscopic quantum tunneling and thermal activation in a small mesa structured Bi2Sr2CaCu2Oyintrinsic Josephson junctions

Haruhisa Kitano, K. Ota, Kenji Hamada +4 more

A nanometer-thick small mesa consiting of only two or three Bi 2 Sr 2 CaCu 2 O y intrinsic Josephson junctions (IJJs) is studied through the switching current distribution measurements down to 0.4 K. Experimental results clearly show that the first switching events from the zero-voltage state for 1 K < T < 4 K are successfully described by a conventional thermal activation (TA) theory for a single Josephson junction, and that they become independent of temperature below T* ∼ 0.7 K. We observe the microwave-induced peak in the switching distribution at 0.4 K, which is induced by the microwave irradiation at 55 GHz. These results strongly suggest that the system crossovers to macroscopic quantum tunneling (MQT) regime below T* , which is as high as the previously reported value for a stacked IJJs with several tens of junctions, in contrast to the recent result on a similar mesa-structured surface IJJ.

Journal of Physics Conference Series•Mar 1, 2009•0 citations

Characteristics of Charging Effect in One-Dimensional Array of Bi2Sr2CaCu2O8+δ Intrinsic Josephson Junctions

Takeshi Kawae, Takashi Yasuda, Satoshi Awaji +3 more

For the observation of the charging effect on a Josephson junction, the charging energy (E c) must be much larger than the Josephson coupling energy (E J) and thermal energy (k B T). We investigated the properties of submicron-sized Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions (IJJs) at low temperature. The current–voltage curve of IJJs with a junction area of 0.06 µm2 showed a much higher resistance state near the zero bias voltage regions when the measurement temperature decreased to 72.6 mK. The ratios of E c/E J and E c/k B T were 7.04 and 5.78, respectively, which indicates that the charging effect is dominant. In addition, a characteristic voltage structure due to the charging effect in one-dimensional junction array, which is composed of the offset voltage and the threshold voltage of the junction, was observed.

Japanese Journal of Applied Physics•Jun 1, 2005•1 citation

Microwave response and photon emission of a voltage baised Josephson junction

Salha Jebari, Alexander Grimm, Dibyendu Hazra +1 more

Bulletin of the American Physical Society•Mar 17, 2016•0 citations
Measurements of macroscopic quantum tunnelling (MQT) in intrinsic Josephson junctions (IJJs) suggest that they may be suitable as qubits. An advantage of using IJJs over trilayers is the absence of any artificial barrier and hence the possible absence of decohering two-level fluctuators. A disadvantage is that it is difficult to fabricate single IJJs. Hence all IJJ MQT experiments have been carried out on arrays of many IJJs in series. Since MQT is suppressed by dissipation, it is important (a) to understand the role of dissipation on the dynamics of IJJs and (b) to consider how the dissipation and the dynamics change as a function of the number of junctions in the array which are in the voltage state. We have measured distributions of the nth-order switching current in TlBaCaCuO IJJ arrays, where n indicates switching from n to n+1 junctions being in the voltage state. The junctions show conventional underdamped behaviour at temperatures below some temperature T*, with a suppression of the width of the distribution above T*. We find that T* depends upon n. For n = 0 (i.e. switching from the supercurrent branch), T* is less than 4.2 K. For n > 0, we measured T* values between 20 K and 40 K. Calculations and simulations show that a change in T* results from a change in Q. Analysis suggests that the Q of the IJJs is determined by the environmental impedance when all junctions in the array are in the zero-voltage state, whereas having one junction or more in the voltage state isolates the array from the environment leading to a higher Q. We discuss our data in the context of possible qubit applications.
A nanometer-thick small mesa consiting of only two or three Bi 2 Sr 2 CaCu 2 O y intrinsic Josephson junctions (IJJs) is studied through the switching current distribution measurements down to 0.4 K. Experimental results clearly show that the first switching events from the zero-voltage state for 1 K < T < 4 K are successfully described by a conventional thermal activation (TA) theory for a single Josephson junction, and that they become independent of temperature below T* ∼ 0.7 K. We observe the microwave-induced peak in the switching distribution at 0.4 K, which is induced by the microwave irradiation at 55 GHz. These results strongly suggest that the system crossovers to macroscopic quantum tunneling (MQT) regime below T* , which is as high as the previously reported value for a stacked IJJs with several tens of junctions, in contrast to the recent result on a similar mesa-structured surface IJJ.
For the observation of the charging effect on a Josephson junction, the charging energy (E c) must be much larger than the Josephson coupling energy (E J) and thermal energy (k B T). We investigated the properties of submicron-sized Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions (IJJs) at low temperature. The current–voltage curve of IJJs with a junction area of 0.06 µm2 showed a much higher resistance state near the zero bias voltage regions when the measurement temperature decreased to 72.6 mK. The ratios of E c/E J and E c/k B T were 7.04 and 5.78, respectively, which indicates that the charging effect is dominant. In addition, a characteristic voltage structure due to the charging effect in one-dimensional junction array, which is composed of the offset voltage and the threshold voltage of the junction, was observed.