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Excited state absorption measurements of Sm sup 2+ in CaF sub 2 , SrF sub 2 , and SrCl sub 2

J. K. Lawson, Howard W. H. Lee, S.A. Payne, L. A. Boatner

Published Apr 1, 1991• 0 citations
OpenAlex

Abstract

We measured the pump-probe spectrum of the Sm{sup 2+} ion in three materials: CaF{sub 2}, SrF{sub 2}, and SrCl{sub 2}. The onset of the observed prominent excited-state absorption band is consistent with an electrostatic model for impurity levels in a solid-state material. 15 refs., 4 figs., 1 tab.

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We have measured the pump-probe spectrum for CaF2:Sm2+ over a wide (360–1020 nm) spectral range. We observed gain throughout most of the 730-nm emission band, although there is some evidence of excited-state absorption (ESA) in this region. A much stronger ESA was observed near 500 nm. The temperature dependence of the ESA signal clearly indicates that the absorption is associated with divalent samarium. Because of the width and strength of this transition, we assign the ESA to a 4f55d → conduction band transition. We calculated the oscillator strength for this ESA band to be 0.10 and rationalized its magnitude based on an intensity-borrowing mechanism that involves the transition from the valence band to the conduction band.
Summary form only given. Using persistent spectral hole burning, rare-earth ions doped in crystalline or glassy matrices may prove useful in optical data storage. In the case of Sm/sup 2+/, persistent spectral hole burning is due to photoionization: the Sm/sup 2+/ is oxidized to form Sm/sup 3+/, and the ejected electron is trapped in the matrix. For applications, it is important to understand the trapping mechanism, to identify the nature of the traps, and to see whether they are stable at room temperature.
The spectral dependence of the photoionization energy of Eu2+:CaF2, Ce3+:YAG, and Sm2+:CaF2 systems have been measured and thresholds experimentally determined and compared with theoretical values calculated from electrostatic models. It is shown that the excited state absorption transitions or the persistent hole burning observed by other authors occur above the threshold energy of photoionization of the impurities and that the states of the crystal which form the bottom of the conduction band may play an important role in the strong probability of these processes. A review of thresholds now known is also given.