We report on studies of a diamond sample with a strong gradient of NV− concentration (between 4 and 36 ppm over 1.5 mm) created by inhomogeneous irradiation with an electron beam. The sample was characterized by spatially resolved luminescence and ODMR spectra and spatial distributions of NV− concentration, strain splitting, and relaxation times T1, T2. Such inhomogeneous sample may find applications in designing optimum conditions for numerous applications in spectroscopy and sensorics.
We report on studies of a diamond sample with a strong gradient of NV− concentration (between 4 and 36 ppm over 1.5 mm) created by inhomogeneous irradiation with an electron beam. The sample was characterized by spatially resolved luminescence and ODMR spectra and spatial distributions of NV− concentration, strain splitting, and relaxation times T1, T2. Such inhomogeneous sample may find applications in designing optimum conditions for numerous applications in spectroscopy and sensorics.
Currently, synthetic diamonds are finding new applications. Quantum devices can be created based on diamond plates with the desired concentration of defects in the structure of the crystal lattice. NV color centers can be used in quantum applications by irradiating plates with high-energy particles, followed by annealing at temperatures above 800°C to develop the spin-optical properties of the centers Diamond plates are subjected to electron irradiation and much less often to proton irradiation. As a result, synthetic diamond plates with NV centers ob-tained by proton irradiation are less studied, although proton irradiation makes it possible to obtain a layered structure of NV centers. In this work, single crystal diamond plates irradiated with protons were studied using polarization microscopy, IR spectroscopy and ODMR spectros-copy. It is shown that when creating NV centers, the distribution and concentration of C – defects in the sample, as well as mechanical stresses before and after irradiation (with subsequent an-nealing), can differ significantly from each other.
We systematically investigate the NV center creation and properties in bulk chemical vapor deposition (CVD) diamond, throughout growth, electron-beam irradiation, and annealing steps. We study diamond series grown with a varying nitrogen flow over 4 orders of magnitude, resulting in a broad range of single substitutional nitrogen (P1 center) densities from 0.2 to 20 ppm. We investigate in-situ P1 and NV creations, as well as NV charge states distributions. As the next step, we optimize electron-irradiation fluences for a fixed nitrogen concentration, with two different accelerated electron energies. We bring up a general approach to determine the optimal irradiation conditions, and discuss criteria for P1 to NV conversion ratios in the context of stable NV charge states. Through all these optimizations, we enhance the NV- concentration remarkably in our CVD diamond samples, without sacrificing their Hahn-echo coherence time T2. We achieve NV concentrations from 1 to 168 ppb with T2 from 549 to 45.5 µs respectively. This study shows a pathway to engineer targeted, optimized properties of NV-ensembles in bulk CVD diamonds for improved sensitivity.
Ensembles of nitrogen-vacancy (NV) centers in diamond are versatile quantum sensors with broad applications in the physical and life sciences. The concentration of neutral substitutional nitrogen ( [ N s 0 ]) strongly influences NV electronic spin coherence times, sensitivity, and optimal sensing strategies. Diamonds with [ N s 0 ] ∼ 1–10 ppm are a focus of recent material engineering efforts, with higher concentrations being favorable for continuous-wave optically detected magnetic resonance (CW-ODMR) and lower concentrations expected to benefit pulsed magnetometry techniques through extended NV spin coherence times and improved sensing duty cycles. In this work, we synthesize and characterize low- [ N s 0 ] ( ∼ 0.8 ppm), NV-enriched diamond material, engineered through low-strain chemical vapor deposition (CVD) growth on high-quality substrates, 12 C isotopic purification, and controlled electron irradiation and annealing. Our results demonstrate good strain homogeneity in diamonds grown on CVD substrates and spin-bath-limited NV dephasing times. By measuring NV spin and charge properties across a wide range of optical NV excitation intensity, we provide direct comparisons of photon-shot-noise-limited magnetic field sensitivity between the current low- [ N s 0 ] and previously studied higher- [ N s 0 ] ( ∼ 14 ppm) NV-diamond sensors. We show that low- [ N s 0 ] diamond can outperform higher- [ N s 0 ] diamond at moderate and low optical NV excitation intensity. Our results provide practical benchmarks and guidance for selecting NV-diamond sensors tailored to specific experimental constraints and sensing requirements.
Abstract We report an investigation of spectral and temporal properties of NV¯ centers in diamond plates fabricated from a single HPHT crystal but subjected to different electron irradiation doses during postgrowth processing. Samples 52734-1 and 52734-2, each with approximately the same nitrogen concentration of 60 ppm, are irradiated with doses of 1 and 2 × 1018 e‒/cm2, respectively. Particular attention is paid to the effect of irradiation dose on the concentration of NV¯ centers and the associated changes in the spectral and temporal properties of superluminescence under identical conditions of optical excitation with laser radiation at a wavelength of 532 nm. Analysis of the absorption spectra reveals that doubling the irradiation dose results in a 1.4-fold increase in the concentration of NV¯ centers—from 7.7 to 10.9 ppm—with a corresponding decrease in the concentration of isolated nitrogen centers (C centers)—from 49 to 43 ppm. The results demonstrate a nonlinear dependence of the increase in the concentration of NV¯ centers on the irradiation dose and make it possible to identify key characteristics of the samples and pumping conditions that determine the efficiency of superluminescence. Specifically, doubling the irradiation dose results in a threefold increase in the spectral intensity and a significant decrease in the duration of the superluminescence pulses. It is found that to achieve efficient superluminescence, it is important not only to have a significant excess of the concentration of C centers over the concentration of NV¯ centers, but also the absolute concentration of NV¯ centers and pump parameters such as the energy density of the pump pulses and the volume of the sample with a population inversion.
The studies of many-body dynamics of interacting spin ensembles, as well as quantum sensing in solid state systems, are often limited by the need for high spin concentrations, along with efficient decoupling of the spin ensemble from its environment. In particular, for an ensemble of nitrogen-vacancy (NV) centers in diamond, high conversion efficiencies between nitrogen (P1) defects and NV centers are essential while maintaining long coherence times of an NV ensemble. In this work, we study the effect of electron irradiation on the conversion efficiency and the coherence time of various types of diamond samples with different initial nitrogen concentrations. The samples were irradiated using a 200 keV transmission electron microscope. Our study reveals that the efficiency of NV creation strongly depends on the initial conversion efficiency and on the initial nitrogen concentration. The irradiation of the examined samples exhibits an order of magnitude improvement in the NV concentration (up to ∼1011 NV/cm2), without degradation in their coherence time of ∼180 μs. We address the potential of this technique toward the study of many-body physics of NV ensembles and the creation of non-classical spin states for quantum sensing.
NV- center has been paid attention as a quantum sensor for highly sensitive detection of magnetic field, electric field, temperature and strain, etc.. Electron beam irradiation followed by subsequent thermal annealing is known as the effective procedures to create NV- center in diamond. The electron irradiation generates vacancies in diamond and the annealing enables vacancies to diffuse in the lattice. Then diffused vacancies are captured by nitrogen atoms, and as a result, NV centers are created. In addition, substitutional nitrogen atom at a lattice site (P1 center) also acts as a donor for NV center, the charge state of NV centers changes from neutral (NV0) to NV-. Creation high concentration of ensemble NV- centers is needed to achieve high sensitively sensing. The magnetic sensitivity is proportional to the reciprocal of the number of NV centers and T2 (spin coherence time), i.e., high concentration NV- centers with long T2 increase the sensitivity. P1 center has an important role for being a component of NV- centers and acting as donor to the NV center. But it also plays a role as decoherence source (decrease in magnetic field sensitivity). Therefore, it is important to create high concentration of NV- centers considering the amount of P1 centers. In current study, we investigate irradiation fluence dependence of the creation behavior of NV centers in type-Ib diamonds by using electron spin resonance (ESR) and photo-luminescence (PL) to understand the creation mechanism of NV- center. The values of T2 are also evaluated by Hahn-echo measurement, since it is one of the key parameters for highly sensitive magnetometry. Then, we discuss the creation mechanism of NV centers based on concentrations of defects.