Towards quantum-enhanced flow sensing using nitrogen-vacancy (NV) centers in diamond

Tingpeng Luo, Lukas Lindner, J Langer +13 more

Abstract The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV − concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in bulk chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over four orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2–20 parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin–spin coherence times T 2 ranging from 45.5 to 549 μ s for CVD diamonds containing 168 to 1 parts per billion NV − centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.

T. Rosskopf

Yuhang Guo, Jiaxin Zhao, Changfeng Weng +5 more

The nitrogen-vacancy (NV) color center in diamond has emerged as a promising candidate for quantum sensing. In this study, we propose a diamond-embedded metal antenna for magnetic detection utilizing NV center ensembles. Our approach involved employing nanofabrication and microwave plasma chemical vapor deposition techniques to fabricate the metal antenna and diamond epilayer. By directly embedding the antenna into the diamond, we effectively minimize external environmental interference, leading to improved device stability and reusability. Moreover, this integration enhances the device's compactness, making it highly suitable for on-chip quantum sensing applications. The innovative antenna design holds great potential for the development of future integrated quantum sensing devices based on NV centers in diamond.

Manuel González Brouwer Raúl

Sora Kawai, Hayate Yamano, Takahiro Sonoda +18 more

Abstract The nitrogen-vacancy (NV) center in diamond is the most promising candidate for quantum sensing because of its beneficial properties. For quantum-sensing applications, a shallow NV center is critical for approximating the sensing target on a diamond surface. Such shallow NV centers are strongly affected by the diamond surface termination. The properties of shallow NV centers in hydrogen-, oxygen-, and fluorine-terminated diamond have been well studied. In recent years, silicon-terminated diamond has also been investigated; however, the effect of silicon-terminated diamond on the properties of shallow NV centers remains unclear. Recently, the suitability of nitrogen-terminated diamond for shallow NV centers has been theoretically and experimentally examined; however, quantum sensing has not yet been performed. In this work, we evaluated the effect of silicon and nitrogen termination on shallow NV centers. The negatively charged state of shallow NV centers was unstable below silicon termination. In contrast, the properties of shallow NV centers in nitrogen-terminated diamond were satisfactory for quantum sensing and enabled 1H NMR detection. Our results are in good agreement with previous reports on silicon and nitrogen terminations and provide the perspective that the stability of shallow NV centers highly depends on the polarity of electron affinity of the diamond surface.

González Brouwer, Raúl