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Quantum sensing using NV centers in diamond

González Brouwer, Raúl

Published Jan 1, 2018• 0 citations
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Abstract The nitrogen-vacancy (NV) center in diamond is the most promising candidate for quantum sensing because of its beneficial properties. For quantum-sensing applications, a shallow NV center is critical for approximating the sensing target on a diamond surface. Such shallow NV centers are strongly affected by the diamond surface termination. The properties of shallow NV centers in hydrogen-, oxygen-, and fluorine-terminated diamond have been well studied. In recent years, silicon-terminated diamond has also been investigated; however, the effect of silicon-terminated diamond on the properties of shallow NV centers remains unclear. Recently, the suitability of nitrogen-terminated diamond for shallow NV centers has been theoretically and experimentally examined; however, quantum sensing has not yet been performed. In this work, we evaluated the effect of silicon and nitrogen termination on shallow NV centers. The negatively charged state of shallow NV centers was unstable below silicon termination. In contrast, the properties of shallow NV centers in nitrogen-terminated diamond were satisfactory for quantum sensing and enabled 1H NMR detection. Our results are in good agreement with previous reports on silicon and nitrogen terminations and provide the perspective that the stability of shallow NV centers highly depends on the polarity of electron affinity of the diamond surface.

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Construction of femtosecond laser irradiation platform for creating quantum sensing devices

Ishino Masahiko, Thanhhung Dinh

Nitrogen-vacancy (NV) centers in diamond are expected to be quantum sensing devices such as magnetic and electric fields, temperature, pressure and so on. The generation of NV centers by irradiations of femtosecond laser pulses has been reported. Femtosecond laser can write NV centers in diamond directly and this direct writing can realize a flexible spatial arrangement of NV centers. As the application of the laser system, we have constructed the femtosecond laser irradiation platform for creating the quantum sensing device, such as NV centers. The femtosecond laser pulse is focused on a sample surface by an objective lens and laser pulse intensity is controlled by attenuators. By use of this irradiation apparatus, we have irradiated diamond samples to create NV centers. We could confirm several graphitization spots, but the signal intensity from NV center did not exist. To use the irradiation platform for creating NV centers in diamond, it needs some improvement, more increasing the repetition rate of irradiation laser and/or impurity nitrogen density in diamond sample.

•Jul 24, 2024•0 citations
Abstract The nitrogen-vacancy (NV) center in diamond is the most promising candidate for quantum sensing because of its beneficial properties. For quantum-sensing applications, a shallow NV center is critical for approximating the sensing target on a diamond surface. Such shallow NV centers are strongly affected by the diamond surface termination. The properties of shallow NV centers in hydrogen-, oxygen-, and fluorine-terminated diamond have been well studied. In recent years, silicon-terminated diamond has also been investigated; however, the effect of silicon-terminated diamond on the properties of shallow NV centers remains unclear. Recently, the suitability of nitrogen-terminated diamond for shallow NV centers has been theoretically and experimentally examined; however, quantum sensing has not yet been performed. In this work, we evaluated the effect of silicon and nitrogen termination on shallow NV centers. The negatively charged state of shallow NV centers was unstable below silicon termination. In contrast, the properties of shallow NV centers in nitrogen-terminated diamond were satisfactory for quantum sensing and enabled 1H NMR detection. Our results are in good agreement with previous reports on silicon and nitrogen terminations and provide the perspective that the stability of shallow NV centers highly depends on the polarity of electron affinity of the diamond surface.
Nitrogen-vacancy (NV) centers in diamond are expected to be quantum sensing devices such as magnetic and electric fields, temperature, pressure and so on. The generation of NV centers by irradiations of femtosecond laser pulses has been reported. Femtosecond laser can write NV centers in diamond directly and this direct writing can realize a flexible spatial arrangement of NV centers. As the application of the laser system, we have constructed the femtosecond laser irradiation platform for creating the quantum sensing device, such as NV centers. The femtosecond laser pulse is focused on a sample surface by an objective lens and laser pulse intensity is controlled by attenuators. By use of this irradiation apparatus, we have irradiated diamond samples to create NV centers. We could confirm several graphitization spots, but the signal intensity from NV center did not exist. To use the irradiation platform for creating NV centers in diamond, it needs some improvement, more increasing the repetition rate of irradiation laser and/or impurity nitrogen density in diamond sample.