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Symposium Latsis on Diamond Photonics - Physics, Technologies and Applications

Optically controlled charge state switching reveals sub-GHz homogeneous linewidth ensembles of SiV centers in a diamond nano-pyramid

Louis Nicolas, Tom Delord, Paul H. Huillery, Gabriel Hetet

Published Jan 1, 2019• 0 citations
Publisher

Abstract

We demonstrate total and reversible optical control of the charge state of SiV cen- ters ensembles embedded in Artech Carbon diamond nano-pyramids. We perform persistent hole burning revealing a homogeneous linewidth lower than 390 MHz. It paves the way for quantum electrodynamics experiments, biological sensing and nanoscale thermometry.

DOI
10.1364/dp.2019.15

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We demonstrate total and reversible optical control of the charge state of SiV cen- ters ensembles embedded in Artech Carbon diamond nano-pyramids. We perform persistent hole burning revealing a homogeneous linewidth lower than 390 MHz. It paves the way for quantum electrodynamics experiments, biological sensing and nanoscale thermometry.
Producing nano-structures with embedded bright ensembles of lifetime-limited emitters is a challenge with potential high impact in a broad range of physical sciences. In this work, we demonstrate controlled charge transfer to and from dark states exhibiting very long lifetimes in high density ensembles of SiV centers hosted in a CVD-grown diamond nano-pyramid. Further, using a combination of resonant photoluminescence excitation and a frequency-selective persistent hole burning technique that exploits such charge state transfer, we could demonstrate close to lifetime-limited linewidths from the SiV centers. Such a nanostructure with thousands of bright narrow linewidth emitters in a volume much below λ3λ^3λ3 will be useful for coherent light-matter coupling, for biological sensing, and nanoscale thermometry.
Producing nanostructures with embedded bright ensembles of lifetime-limited emitters is a challenge with potential high impact in a broad range of physical sciences. In this work, we demonstrate controlled charge transfer to and from dark states exhibiting very long lifetimes in high-density ensembles of SiV centers hosted in a diamond nanopyramid grown by chemical vapor deposition. Further, using a combination of resonant photoluminescence excitation and a frequency-selective persistent hole-burning technique that exploits this charge state transfer, we could demonstrate close to lifetime-limited linewidths from the SiV centers. Such a nanostructure with thousands of bright narrow linewidth emitters in a volume much below λ 3 will be useful for coherent light–matter coupling, biological sensing, and nanoscale thermometry.
Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.
Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We demonstrate static and dynamic control of ultra-shallow (<15 nm) SiV ensembles in type IIa diamond. By combining low-energy ion implantation with tailored oxygen and hydrogen terminations, we map regimes that maximise the fluorescent SiV- population over dark charge states. We then realize reversible SiV- to SiV0 conversion using aqueous electrolytic gating with sub-200 mV biases and low optical powers. Our results enable low-power electrical control of SiV ensembles for integrated quantum photonics and biologically compatible voltage imaging in the near-infrared.
High Resolution Image Download MS PowerPoint Slide The negatively charged silicon vacancy center (SiV – ) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV – centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV – with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV – for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.