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arXiv:2606.18819

Solution gate control of shallow silicon vacancy charge states in diamond

Charlie Pattinson, Daniel J. McCloskey, Nikolai Dontschuk, Brett C. Johnson, Alexander A. Wood, David Simpson

Published Jun 17, 2026• 0 citations
arXivHTMLPDF

Abstract

Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We demonstrate static and dynamic control of ultra-shallow (<15 nm) SiV ensembles in type IIa diamond. By combining low-energy ion implantation with tailored oxygen and hydrogen terminations, we map regimes that maximise the fluorescent SiV- population over dark charge states. We then realize reversible SiV- to SiV0 conversion using aqueous electrolytic gating with sub-200 mV biases and low optical powers. Our results enable low-power electrical control of SiV ensembles for integrated quantum photonics and biologically compatible voltage imaging in the near-infrared.

DOI
10.48550/arxiv.2606.18819

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Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We demonstrate static and dynamic control of ultra-shallow (<15 nm) SiV ensembles in type IIa diamond. By combining low-energy ion implantation with tailored oxygen and hydrogen terminations, we map regimes that maximise the fluorescent SiV- population over dark charge states. We then realize reversible SiV- to SiV0 conversion using aqueous electrolytic gating with sub-200 mV biases and low optical powers. Our results enable low-power electrical control of SiV ensembles for integrated quantum photonics and biologically compatible voltage imaging in the near-infrared.
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The silicon-vacancy (SiV) color center in diamond has recently emerged as a promising qubit for quantum photonics. However, the electrical control and excitation of the SiV centers are challenging due to the low density of free carriers in doped diamond. Here, we realize electrical excitation of SiV centers in a single-crystal diamond membrane, which is promising for scalable photonic architectures. We further demonstrate electrical switching of the charge states of the SiV centers by applying a forward bias voltage to the fabricated diamond-membrane devices and identify the position of the SiV−/SiV0 charge transition level. Our findings provide a perspective toward electrical triggering of color centers in diamond and accelerate the development of scalable quantum nanophotonic technologies.
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