Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2206.13698 · Physical Review Letters

Neutral Silicon Vacancy Centers in Undoped Diamond via Surface Control

Zi-Huai Zhang, Josh A. Zuber, Lila V. H. Rodgers, Xin Gui, Paul Stevenson, Minghao Li, Marietta Batzer, Marcel.li Grimau Puigibert, Brendan Shields, Andrew Mark Edmonds, Nicola Palmer, Matthew Markham, R. J. Cava, Patrick Maletinsky, Nathalie P. de Leon

Published Apr 21, 2023• 38 citations
arXivHTMLPDF

Abstract

Neutral silicon vacancy centers (SiV^{0}) in diamond are promising candidates for quantum applications; however, stabilizing SiV^{0} requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV^{0} centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV^{0} centers, as well as charge state engineering of other defects.

DOI
10.1103/physrevlett.130.166902

Related papers

Neutral Silicon-Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Zi-Huai Zhang, Andrew Mark Edmonds, Nicola Palmer +2 more

Neutral silicon-vacancy ($\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of $\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$ centers requires careful Fermi-level engineering of the diamond host material, making further technological development challenging. Here, we show that $\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$ centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting $\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$ centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of $\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$ centers as well as other emerging quantum defects in diamond.

arXiv:2209.08710•Physical Review Applied•Mar 7, 2023•14 citations

Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States

Zi-Huai Zhang, Paul Stevenson, Gergő Thiering +7 more

Neutral silicon vacancy (SiV^{0}) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV^{0} centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV^{0} as well as other emerging defect systems.

arXiv:2004.12544•Physical Review Letters•Nov 30, 2020•56 citations

Shallow Silicon Vacancy Centers with Lifetime-Limited Optical Linewidths in Diamond Nanostructures

Josh A. Zuber, Minghao Li, Marcel.li Grimau Puigibert +4 more

High Resolution Image Download MS PowerPoint Slide The negatively charged silicon vacancy center (SiV – ) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV – centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV – with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV – for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.

arXiv:2307.12753•Nano Letters•Nov 21, 2023•31 citations

Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond

Taisuke Kageura, Yosuke Sasama, Tokuyuki Teraji +6 more

The ability to control the charge and spin states of nitrogen-vacancy (NV) centers near the diamond surface is of pivotal importance for quantum applications. Hydrogen-terminated diamond is promising for long spin coherence times and ease of controlling the charge states due to the low density of surface defects. However, it has so far been challenging to create negatively charged single NV centers with controllable spin states beneath a hydrogen-terminated surface because atmospheric adsorbates that act as acceptors induce surface holes. In this study, we optically detected the magnetic resonance of shallow single NV centers in hydrogen-terminated diamond through precise control of the nitrogen implantation fluence. Furthermore, we found that the probability of detecting the resonance was enhanced by reducing the surface acceptor density through passivation of the hydrogen-terminated surface with hexagonal boron nitride without air exposure. This control method opens up new opportunities for using NV centers in quantum applications.

ACS Applied Materials & Interfaces•Mar 1, 2024•4 citations

Solution gate control of shallow silicon vacancy charge states in diamond

Charlie Pattinson, Daniel J. McCloskey, Nikolai Dontschuk +3 more

Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We demonstrate static and dynamic control of ultra-shallow (<15 nm) SiV ensembles in type IIa diamond. By combining low-energy ion implantation with tailored oxygen and hydrogen terminations, we map regimes that maximise the fluorescent SiV- population over dark charge states. We then realize reversible SiV- to SiV0 conversion using aqueous electrolytic gating with sub-200 mV biases and low optical powers. Our results enable low-power electrical control of SiV ensembles for integrated quantum photonics and biologically compatible voltage imaging in the near-infrared.

arXiv:2606.18819•Jun 17, 2026•0 citations

Neutral Silicon-Vacancy Center in Diamond: Spin Polarization and Lifetimes

Ben L. Green, Sinead Mottishaw, Ben G. Breeze +6 more

We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100 μs at low-temperature, and a spin relaxation limit of T_{1}>25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.

arXiv:1705.10205•Physical Review Letters•Aug 31, 2017•79 citations
Neutral silicon vacancy centers (SiV^{0}) in diamond are promising candidates for quantum applications; however, stabilizing SiV^{0} requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV^{0} centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV^{0} centers, as well as charge state engineering of other defects.
Neutral silicon-vacancy (Si-V0\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}Si-V0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of Si-V0\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}Si-V0 centers requires careful Fermi-level engineering of the diamond host material, making further technological development challenging. Here, we show that Si-V0\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}Si-V0 centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting Si-V0\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}Si-V0 centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of Si-V0\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}Si-V0 centers as well as other emerging quantum defects in diamond.
Neutral silicon vacancy (SiV^{0}) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV^{0} centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV^{0} as well as other emerging defect systems.
High Resolution Image Download MS PowerPoint Slide The negatively charged silicon vacancy center (SiV – ) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV – centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV – with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or repumping. Our results constitute a key step toward the use of near-surface, optically coherent SiV – for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.
The ability to control the charge and spin states of nitrogen-vacancy (NV) centers near the diamond surface is of pivotal importance for quantum applications. Hydrogen-terminated diamond is promising for long spin coherence times and ease of controlling the charge states due to the low density of surface defects. However, it has so far been challenging to create negatively charged single NV centers with controllable spin states beneath a hydrogen-terminated surface because atmospheric adsorbates that act as acceptors induce surface holes. In this study, we optically detected the magnetic resonance of shallow single NV centers in hydrogen-terminated diamond through precise control of the nitrogen implantation fluence. Furthermore, we found that the probability of detecting the resonance was enhanced by reducing the surface acceptor density through passivation of the hydrogen-terminated surface with hexagonal boron nitride without air exposure. This control method opens up new opportunities for using NV centers in quantum applications.
Silicon-vacancy (SiV) centers in diamond combine near-infrared emission with solid-state robustness, but their performance hinges on isolating favorable defect charge states. We demonstrate static and dynamic control of ultra-shallow (<15 nm) SiV ensembles in type IIa diamond. By combining low-energy ion implantation with tailored oxygen and hydrogen terminations, we map regimes that maximise the fluorescent SiV- population over dark charge states. We then realize reversible SiV- to SiV0 conversion using aqueous electrolytic gating with sub-200 mV biases and low optical powers. Our results enable low-power electrical control of SiV ensembles for integrated quantum photonics and biologically compatible voltage imaging in the near-infrared.
We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100 μs at low-temperature, and a spin relaxation limit of T_{1}>25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.